JPWO2024257580A5 - - Google Patents

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Publication number
JPWO2024257580A5
JPWO2024257580A5 JP2025527614A JP2025527614A JPWO2024257580A5 JP WO2024257580 A5 JPWO2024257580 A5 JP WO2024257580A5 JP 2025527614 A JP2025527614 A JP 2025527614A JP 2025527614 A JP2025527614 A JP 2025527614A JP WO2024257580 A5 JPWO2024257580 A5 JP WO2024257580A5
Authority
JP
Japan
Prior art keywords
silicon carbide
substrate
carbide epitaxial
epitaxial layer
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025527614A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024257580A1 (cg-RX-API-DMAC7.html
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/019082 external-priority patent/WO2024257580A1/ja
Publication of JPWO2024257580A1 publication Critical patent/JPWO2024257580A1/ja
Publication of JPWO2024257580A5 publication Critical patent/JPWO2024257580A5/ja
Pending legal-status Critical Current

Links

JP2025527614A 2023-06-16 2024-05-23 Pending JPWO2024257580A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023099394 2023-06-16
PCT/JP2024/019082 WO2024257580A1 (ja) 2023-06-16 2024-05-23 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024257580A1 JPWO2024257580A1 (cg-RX-API-DMAC7.html) 2024-12-19
JPWO2024257580A5 true JPWO2024257580A5 (cg-RX-API-DMAC7.html) 2026-03-17

Family

ID=93851781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025527614A Pending JPWO2024257580A1 (cg-RX-API-DMAC7.html) 2023-06-16 2024-05-23

Country Status (2)

Country Link
JP (1) JPWO2024257580A1 (cg-RX-API-DMAC7.html)
WO (1) WO2024257580A1 (cg-RX-API-DMAC7.html)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61186288A (ja) * 1985-02-14 1986-08-19 Nec Corp 炭化珪素化合物半導体の気相エピタキシヤル成長装置
JP6481582B2 (ja) * 2015-10-13 2019-03-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6685258B2 (ja) * 2017-05-01 2020-04-22 三菱電機株式会社 炭化珪素エピタキシャル成長装置、炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法
WO2020105211A1 (ja) * 2018-11-20 2020-05-28 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造装置
JP7585776B2 (ja) * 2020-12-25 2024-11-19 住友電気工業株式会社 サセプタ、炭化珪素エピタキシャル層の成長方法および炭化珪素エピタキシャル基板の製造方法
US12516443B2 (en) * 2021-02-15 2026-01-06 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate

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