JPWO2024176641A1 - - Google Patents
Info
- Publication number
- JPWO2024176641A1 JPWO2024176641A1 JP2025502155A JP2025502155A JPWO2024176641A1 JP WO2024176641 A1 JPWO2024176641 A1 JP WO2024176641A1 JP 2025502155 A JP2025502155 A JP 2025502155A JP 2025502155 A JP2025502155 A JP 2025502155A JP WO2024176641 A1 JPWO2024176641 A1 JP WO2024176641A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023027743 | 2023-02-24 | ||
| PCT/JP2024/000469 WO2024176641A1 (ja) | 2023-02-24 | 2024-01-11 | 固体撮像装置及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024176641A1 true JPWO2024176641A1 (enExample) | 2024-08-29 |
Family
ID=92500886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025502155A Pending JPWO2024176641A1 (enExample) | 2023-02-24 | 2024-01-11 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024176641A1 (enExample) |
| KR (1) | KR20250154420A (enExample) |
| CN (1) | CN120693990A (enExample) |
| WO (1) | WO2024176641A1 (enExample) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283552A (ja) * | 2008-05-20 | 2009-12-03 | Panasonic Corp | 固体撮像素子 |
| JP6001887B2 (ja) * | 2012-03-13 | 2016-10-05 | 日本放送協会 | 固体撮像装置 |
| JP6094511B2 (ja) * | 2014-02-25 | 2017-03-15 | ソニー株式会社 | 撮像素子および撮像装置 |
| US10194107B2 (en) * | 2015-05-20 | 2019-01-29 | Sony Corporation | Solid-state imaging apparatus and driving method of solid-state imaging apparatus |
| TWI866936B (zh) * | 2018-11-21 | 2024-12-21 | 日商索尼半導體解決方案公司 | 固體攝像元件 |
| WO2021200174A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および電子機器 |
| JP2022152974A (ja) * | 2021-03-29 | 2022-10-12 | ソニーセミコンダクタソリューションズ株式会社 | 撮像システム及び撮像装置 |
-
2024
- 2024-01-11 WO PCT/JP2024/000469 patent/WO2024176641A1/ja not_active Ceased
- 2024-01-11 CN CN202480012507.0A patent/CN120693990A/zh active Pending
- 2024-01-11 KR KR1020257030702A patent/KR20250154420A/ko active Pending
- 2024-01-11 JP JP2025502155A patent/JPWO2024176641A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN120693990A (zh) | 2025-09-23 |
| WO2024176641A1 (ja) | 2024-08-29 |
| KR20250154420A (ko) | 2025-10-28 |