JPWO2024095113A1 - - Google Patents
Info
- Publication number
- JPWO2024095113A1 JPWO2024095113A1 JP2024553926A JP2024553926A JPWO2024095113A1 JP WO2024095113 A1 JPWO2024095113 A1 JP WO2024095113A1 JP 2024553926 A JP2024553926 A JP 2024553926A JP 2024553926 A JP2024553926 A JP 2024553926A JP WO2024095113 A1 JPWO2024095113 A1 JP WO2024095113A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022176862 | 2022-11-04 | ||
| PCT/IB2023/060839 WO2024095113A1 (ja) | 2022-11-04 | 2023-10-27 | 半導体装置、及びその作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024095113A1 true JPWO2024095113A1 (https=) | 2024-05-10 |
Family
ID=90929889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024553926A Pending JPWO2024095113A1 (https=) | 2022-11-04 | 2023-10-27 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20260020285A1 (https=) |
| JP (1) | JPWO2024095113A1 (https=) |
| KR (1) | KR20250108625A (https=) |
| CN (1) | CN120092498A (https=) |
| DE (1) | DE112023004639T5 (https=) |
| TW (1) | TW202425355A (https=) |
| WO (1) | WO2024095113A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12342681B2 (en) * | 2023-09-15 | 2025-06-24 | Industrial Technology Research Institute | All-oxide transistor structure, method for fabricating the same and display panel comprising the structure |
| WO2025243161A1 (ja) * | 2024-05-23 | 2025-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2026033402A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2871347B2 (ja) * | 1992-10-08 | 1999-03-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| US9312257B2 (en) | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2017168760A (ja) * | 2016-03-18 | 2017-09-21 | 株式会社ジャパンディスプレイ | 半導体装置 |
| US10593693B2 (en) * | 2017-06-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
-
2023
- 2023-10-27 JP JP2024553926A patent/JPWO2024095113A1/ja active Pending
- 2023-10-27 CN CN202380071580.0A patent/CN120092498A/zh active Pending
- 2023-10-27 KR KR1020257015674A patent/KR20250108625A/ko active Pending
- 2023-10-27 US US19/118,797 patent/US20260020285A1/en active Pending
- 2023-10-27 DE DE112023004639.5T patent/DE112023004639T5/de active Pending
- 2023-10-27 WO PCT/IB2023/060839 patent/WO2024095113A1/ja not_active Ceased
- 2023-11-02 TW TW112142147A patent/TW202425355A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20260020285A1 (en) | 2026-01-15 |
| DE112023004639T5 (de) | 2025-10-02 |
| WO2024095113A1 (ja) | 2024-05-10 |
| CN120092498A (zh) | 2025-06-03 |
| KR20250108625A (ko) | 2025-07-15 |
| TW202425355A (zh) | 2024-06-16 |