JPWO2024074969A1 - - Google Patents
Info
- Publication number
- JPWO2024074969A1 JPWO2024074969A1 JP2024555466A JP2024555466A JPWO2024074969A1 JP WO2024074969 A1 JPWO2024074969 A1 JP WO2024074969A1 JP 2024555466 A JP2024555466 A JP 2024555466A JP 2024555466 A JP2024555466 A JP 2024555466A JP WO2024074969 A1 JPWO2024074969 A1 JP WO2024074969A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022162373 | 2022-10-07 | ||
| PCT/IB2023/059840 WO2024074969A1 (ja) | 2022-10-07 | 2023-10-02 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024074969A1 true JPWO2024074969A1 (https=) | 2024-04-11 |
Family
ID=90607618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024555466A Pending JPWO2024074969A1 (https=) | 2022-10-07 | 2023-10-02 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20260101500A1 (https=) |
| JP (1) | JPWO2024074969A1 (https=) |
| WO (1) | WO2024074969A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025243161A1 (ja) * | 2024-05-23 | 2025-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN119947089A (zh) * | 2024-12-30 | 2025-05-06 | 北京超弦存储器研究院 | 一种存储单元、存储器和电子设备 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4593960B2 (ja) * | 2004-04-14 | 2010-12-08 | 白土 猛英 | 半導体記憶装置 |
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9978879B2 (en) * | 2016-08-31 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2022049605A (ja) * | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
-
2023
- 2023-10-02 WO PCT/IB2023/059840 patent/WO2024074969A1/ja not_active Ceased
- 2023-10-02 JP JP2024555466A patent/JPWO2024074969A1/ja active Pending
- 2023-10-02 US US19/112,491 patent/US20260101500A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024074969A1 (ja) | 2024-04-11 |
| US20260101500A1 (en) | 2026-04-09 |