JPWO2024018715A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2024018715A5
JPWO2024018715A5 JP2023563899A JP2023563899A JPWO2024018715A5 JP WO2024018715 A5 JPWO2024018715 A5 JP WO2024018715A5 JP 2023563899 A JP2023563899 A JP 2023563899A JP 2023563899 A JP2023563899 A JP 2023563899A JP WO2024018715 A5 JPWO2024018715 A5 JP WO2024018715A5
Authority
JP
Japan
Prior art keywords
region
gate
gate electrode
semiconductor layer
plan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023563899A
Other languages
English (en)
Japanese (ja)
Other versions
JP7442750B1 (ja
JPWO2024018715A1 (cg-RX-API-DMAC7.html
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/016405 external-priority patent/WO2024018715A1/ja
Publication of JPWO2024018715A1 publication Critical patent/JPWO2024018715A1/ja
Priority to JP2024023534A priority Critical patent/JP7503220B2/ja
Application granted granted Critical
Publication of JP7442750B1 publication Critical patent/JP7442750B1/ja
Publication of JPWO2024018715A5 publication Critical patent/JPWO2024018715A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023563899A 2022-07-22 2023-04-26 半導体装置 Active JP7442750B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024023534A JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263391463P 2022-07-22 2022-07-22
US63/391,463 2022-07-22
PCT/JP2023/016405 WO2024018715A1 (ja) 2022-07-22 2023-04-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024023534A Division JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024018715A1 JPWO2024018715A1 (cg-RX-API-DMAC7.html) 2024-01-25
JP7442750B1 JP7442750B1 (ja) 2024-03-04
JPWO2024018715A5 true JPWO2024018715A5 (cg-RX-API-DMAC7.html) 2024-06-25

Family

ID=89491233

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023563899A Active JP7442750B1 (ja) 2022-07-22 2023-04-26 半導体装置
JP2024023534A Active JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024023534A Active JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Country Status (2)

Country Link
JP (2) JP7442750B1 (cg-RX-API-DMAC7.html)
CN (2) CN119208328B (cg-RX-API-DMAC7.html)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP3917144B2 (ja) * 2004-04-09 2007-05-23 株式会社東芝 半導体装置
JP2007129250A (ja) * 2006-12-20 2007-05-24 Fujitsu Ltd 半導体装置
US7960788B2 (en) * 2007-01-25 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Replacing symmetric transistors with asymmetric transistors
US20110233605A1 (en) * 2010-03-26 2011-09-29 Force Mos Technology Co. Ltd. Semiconductor power device layout for stress reduction
JP7131003B2 (ja) * 2018-03-16 2022-09-06 富士電機株式会社 半導体装置
TWI761740B (zh) * 2018-12-19 2022-04-21 日商新唐科技日本股份有限公司 半導體裝置
JP7539269B2 (ja) * 2020-07-31 2024-08-23 ローム株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2021005732A5 (ja) 半導体装置
US9685564B2 (en) Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures
JP2025075083A5 (cg-RX-API-DMAC7.html)
US12310103B2 (en) Semiconductor integrated circuit device having standard cells including three dimensional transistors
JP2022185100A5 (cg-RX-API-DMAC7.html)
JP7376805B2 (ja) 半導体集積回路装置
US8994183B2 (en) Multilayer interconnects with an extension part
US10325845B2 (en) Layout technique for middle-end-of-line
JP2022153382A5 (cg-RX-API-DMAC7.html)
JP2013153189A5 (cg-RX-API-DMAC7.html)
US7339241B2 (en) FinFET structure with contacts
JPWO2018003634A1 (ja) 半導体集積回路装置
TWI723157B (zh) 半導體裝置
JPWO2021070366A5 (cg-RX-API-DMAC7.html)
JPWO2019171198A5 (cg-RX-API-DMAC7.html)
JPWO2023189053A5 (cg-RX-API-DMAC7.html)
JPWO2024018715A5 (cg-RX-API-DMAC7.html)
WO2019116883A1 (ja) 半導体集積回路装置
US6839264B2 (en) Semiconductor device without adverse effects caused by inclinations of word line and bit line
JP2006237471A5 (cg-RX-API-DMAC7.html)
CN110943078A (zh) 半导体器件
JPWO2023135896A5 (cg-RX-API-DMAC7.html)
JPWO2023090059A5 (cg-RX-API-DMAC7.html)
JPWO2024202987A5 (cg-RX-API-DMAC7.html)
JPWO2023132231A5 (cg-RX-API-DMAC7.html)