JPWO2023223657A5 - - Google Patents
Info
- Publication number
- JPWO2023223657A5 JPWO2023223657A5 JP2024521575A JP2024521575A JPWO2023223657A5 JP WO2023223657 A5 JPWO2023223657 A5 JP WO2023223657A5 JP 2024521575 A JP2024521575 A JP 2024521575A JP 2024521575 A JP2024521575 A JP 2024521575A JP WO2023223657 A5 JPWO2023223657 A5 JP WO2023223657A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- manufacturing
- heat treatment
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022082314 | 2022-05-19 | ||
| PCT/JP2023/010846 WO2023223657A1 (ja) | 2022-05-19 | 2023-03-20 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023223657A1 JPWO2023223657A1 (https=) | 2023-11-23 |
| JPWO2023223657A5 true JPWO2023223657A5 (https=) | 2026-03-18 |
Family
ID=88835261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024521575A Pending JPWO2023223657A1 (https=) | 2022-05-19 | 2023-03-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250063751A1 (https=) |
| JP (1) | JPWO2023223657A1 (https=) |
| KR (1) | KR20240167926A (https=) |
| CN (1) | CN119032417A (https=) |
| WO (1) | WO2023223657A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0922878A (ja) * | 1995-07-03 | 1997-01-21 | Dainippon Screen Mfg Co Ltd | 基板の熱処理炉 |
| WO2011058867A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing the same, and transistor |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9660092B2 (en) * | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
| SG11201505225TA (en) | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2017137869A1 (en) | 2016-02-12 | 2017-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
-
2023
- 2023-03-20 JP JP2024521575A patent/JPWO2023223657A1/ja active Pending
- 2023-03-20 KR KR1020247036693A patent/KR20240167926A/ko not_active Ceased
- 2023-03-20 CN CN202380033758.2A patent/CN119032417A/zh active Pending
- 2023-03-20 WO PCT/JP2023/010846 patent/WO2023223657A1/ja not_active Ceased
-
2024
- 2024-11-01 US US18/934,519 patent/US20250063751A1/en active Pending
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