JPWO2023209484A1 - - Google Patents
Info
- Publication number
- JPWO2023209484A1 JPWO2023209484A1 JP2024517597A JP2024517597A JPWO2023209484A1 JP WO2023209484 A1 JPWO2023209484 A1 JP WO2023209484A1 JP 2024517597 A JP2024517597 A JP 2024517597A JP 2024517597 A JP2024517597 A JP 2024517597A JP WO2023209484 A1 JPWO2023209484 A1 JP WO2023209484A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022075007 | 2022-04-28 | ||
| PCT/IB2023/053816 WO2023209484A1 (ja) | 2022-04-28 | 2023-04-14 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023209484A1 true JPWO2023209484A1 (https=) | 2023-11-02 |
| JPWO2023209484A5 JPWO2023209484A5 (https=) | 2026-04-15 |
Family
ID=88518030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024517597A Pending JPWO2023209484A1 (https=) | 2022-04-28 | 2023-04-14 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250176155A1 (https=) |
| JP (1) | JPWO2023209484A1 (https=) |
| KR (1) | KR20250003661A (https=) |
| CN (1) | CN119096713A (https=) |
| TW (1) | TW202343807A (https=) |
| WO (1) | WO2023209484A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9312257B2 (en) * | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10692869B2 (en) * | 2016-11-17 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP2018085357A (ja) * | 2016-11-21 | 2018-05-31 | 株式会社半導体エネルギー研究所 | 記憶装置、及び電子機器 |
| US20200342932A1 (en) * | 2019-04-25 | 2020-10-29 | John Bennett | Nand connected gain cell memory |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
-
2023
- 2023-04-14 JP JP2024517597A patent/JPWO2023209484A1/ja active Pending
- 2023-04-14 US US18/859,601 patent/US20250176155A1/en active Pending
- 2023-04-14 CN CN202380036068.2A patent/CN119096713A/zh active Pending
- 2023-04-14 KR KR1020247036308A patent/KR20250003661A/ko active Pending
- 2023-04-14 WO PCT/IB2023/053816 patent/WO2023209484A1/ja not_active Ceased
- 2023-04-21 TW TW112115013A patent/TW202343807A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023209484A1 (ja) | 2023-11-02 |
| US20250176155A1 (en) | 2025-05-29 |
| TW202343807A (zh) | 2023-11-01 |
| CN119096713A (zh) | 2024-12-06 |
| KR20250003661A (ko) | 2025-01-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260407 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260407 |