JPWO2023127187A5 - - Google Patents

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Publication number
JPWO2023127187A5
JPWO2023127187A5 JP2023570644A JP2023570644A JPWO2023127187A5 JP WO2023127187 A5 JPWO2023127187 A5 JP WO2023127187A5 JP 2023570644 A JP2023570644 A JP 2023570644A JP 2023570644 A JP2023570644 A JP 2023570644A JP WO2023127187 A5 JPWO2023127187 A5 JP WO2023127187A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
nitride semiconductor
resistance
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023570644A
Other languages
English (en)
Japanese (ja)
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JPWO2023127187A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/028179 external-priority patent/WO2023127187A1/ja
Publication of JPWO2023127187A1 publication Critical patent/JPWO2023127187A1/ja
Publication of JPWO2023127187A5 publication Critical patent/JPWO2023127187A5/ja
Pending legal-status Critical Current

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JP2023570644A 2021-12-27 2022-07-20 Pending JPWO2023127187A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021212461 2021-12-27
PCT/JP2022/028179 WO2023127187A1 (ja) 2021-12-27 2022-07-20 窒化物半導体デバイス

Publications (2)

Publication Number Publication Date
JPWO2023127187A1 JPWO2023127187A1 (https=) 2023-07-06
JPWO2023127187A5 true JPWO2023127187A5 (https=) 2025-06-05

Family

ID=86998547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023570644A Pending JPWO2023127187A1 (https=) 2021-12-27 2022-07-20

Country Status (3)

Country Link
US (1) US20240332372A1 (https=)
JP (1) JPWO2023127187A1 (https=)
WO (1) WO2023127187A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015004853A1 (ja) * 2013-07-12 2015-01-15 パナソニックＩｐマネジメント株式会社 半導体装置
JP6241100B2 (ja) * 2013-07-17 2017-12-06 豊田合成株式会社 Ｍｏｓｆｅｔ
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
JP7633938B2 (ja) * 2019-10-09 2025-02-20 パナソニックホールディングス株式会社 窒化物半導体デバイス
JP7605769B2 (ja) * 2020-01-08 2024-12-24 パナソニックホールディングス株式会社 窒化物半導体装置

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