JPWO2023127110A1 - - Google Patents

Info

Publication number
JPWO2023127110A1
JPWO2023127110A1 JP2023570590A JP2023570590A JPWO2023127110A1 JP WO2023127110 A1 JPWO2023127110 A1 JP WO2023127110A1 JP 2023570590 A JP2023570590 A JP 2023570590A JP 2023570590 A JP2023570590 A JP 2023570590A JP WO2023127110 A1 JPWO2023127110 A1 JP WO2023127110A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2023570590A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023127110A1 publication Critical patent/JPWO2023127110A1/ja
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
JP2023570590A 2021-12-28 2021-12-28 Abandoned JPWO2023127110A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/048832 WO2023127110A1 (ja) 2021-12-28 2021-12-28 光検出装置及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2023127110A1 true JPWO2023127110A1 (https=) 2023-07-06

Family

ID=86998388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023570590A Abandoned JPWO2023127110A1 (https=) 2021-12-28 2021-12-28

Country Status (2)

Country Link
JP (1) JPWO2023127110A1 (https=)
WO (1) WO2023127110A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104287A (ja) * 1989-09-19 1991-05-01 Fujitsu Ltd 半導体受光素子の製造方法
JP2003234494A (ja) * 2002-02-08 2003-08-22 Sumitomo Electric Ind Ltd 半導体受光素子
JP5991036B2 (ja) * 2012-06-13 2016-09-14 住友電気工業株式会社 受光素子および光学装置
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
KR102237820B1 (ko) * 2014-05-14 2021-04-08 삼성전자주식회사 수평형 포토 다이오드, 이를 포함하는 이미지 센서 및 포토 다이오드, 이미지센서의 제조방법
JP2018190798A (ja) * 2017-04-28 2018-11-29 住友電気工業株式会社 赤外線検知半導体デバイス

Also Published As

Publication number Publication date
WO2023127110A1 (ja) 2023-07-06

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Legal Events

Date Code Title Description
A621 Written request for application examination

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Effective date: 20241114

A762 Written abandonment of application

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Effective date: 20250922