JPWO2023089959A1 - - Google Patents
Info
- Publication number
- JPWO2023089959A1 JPWO2023089959A1 JP2023561434A JP2023561434A JPWO2023089959A1 JP WO2023089959 A1 JPWO2023089959 A1 JP WO2023089959A1 JP 2023561434 A JP2023561434 A JP 2023561434A JP 2023561434 A JP2023561434 A JP 2023561434A JP WO2023089959 A1 JPWO2023089959 A1 JP WO2023089959A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0038—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021188663 | 2021-11-19 | ||
| PCT/JP2022/035906 WO2023089959A1 (ja) | 2021-11-19 | 2022-09-27 | 半導体回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023089959A1 true JPWO2023089959A1 (https=) | 2023-05-25 |
Family
ID=86396747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023561434A Abandoned JPWO2023089959A1 (https=) | 2021-11-19 | 2022-09-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12609149B2 (https=) |
| JP (1) | JPWO2023089959A1 (https=) |
| KR (1) | KR20240105386A (https=) |
| CN (1) | CN118235202A (https=) |
| WO (1) | WO2023089959A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4071531B2 (ja) | 2002-04-23 | 2008-04-02 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
| WO2006064559A1 (ja) | 2004-12-15 | 2006-06-22 | Fujitsu Limited | 磁気メモリ装置及びその読み出し方法 |
| JP2006210396A (ja) * | 2005-01-25 | 2006-08-10 | Fujitsu Ltd | 磁気メモリ装置及びその読み出し方法 |
| JP2011204287A (ja) | 2010-03-24 | 2011-10-13 | Sony Corp | 記憶装置 |
| JP5754366B2 (ja) | 2011-12-14 | 2015-07-29 | 富士通株式会社 | 磁気メモリ装置及びその読み出し方法 |
| JP5444414B2 (ja) * | 2012-06-04 | 2014-03-19 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US9390779B2 (en) | 2013-03-15 | 2016-07-12 | Qualcomm Incorporated | System and method of sensing a memory cell |
| WO2015083754A1 (ja) | 2013-12-05 | 2015-06-11 | 国立大学法人東北大学 | Ｓｔｔ－ｍｒａｍを使用した半導体記憶装置 |
| US11568948B2 (en) * | 2021-02-12 | 2023-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and method of operating same |
-
2022
- 2022-09-27 US US18/709,583 patent/US12609149B2/en active Active
- 2022-09-27 WO PCT/JP2022/035906 patent/WO2023089959A1/ja not_active Ceased
- 2022-09-27 CN CN202280075391.6A patent/CN118235202A/zh active Pending
- 2022-09-27 KR KR1020247015387A patent/KR20240105386A/ko active Pending
- 2022-09-27 JP JP2023561434A patent/JPWO2023089959A1/ja not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN118235202A (zh) | 2024-06-21 |
| US20250006238A1 (en) | 2025-01-02 |
| KR20240105386A (ko) | 2024-07-05 |
| WO2023089959A1 (ja) | 2023-05-25 |
| US12609149B2 (en) | 2026-04-21 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250820 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20250925 |