JPWO2023054321A1 - - Google Patents

Info

Publication number
JPWO2023054321A1
JPWO2023054321A1 JP2023535613A JP2023535613A JPWO2023054321A1 JP WO2023054321 A1 JPWO2023054321 A1 JP WO2023054321A1 JP 2023535613 A JP2023535613 A JP 2023535613A JP 2023535613 A JP2023535613 A JP 2023535613A JP WO2023054321 A1 JPWO2023054321 A1 JP WO2023054321A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023535613A
Other versions
JP7408881B2 (ja
JPWO2023054321A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023054321A1 publication Critical patent/JPWO2023054321A1/ja
Publication of JPWO2023054321A5 publication Critical patent/JPWO2023054321A5/ja
Priority to JP2023214273A priority Critical patent/JP2024029034A/ja
Application granted granted Critical
Publication of JP7408881B2 publication Critical patent/JP7408881B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2023535613A 2021-09-29 2022-09-27 接合型ウェーハの剥離方法 Active JP7408881B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023214273A JP2024029034A (ja) 2021-09-29 2023-12-19 接合型ウェーハの剥離方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021159760 2021-09-29
JP2021159760 2021-09-29
PCT/JP2022/035852 WO2023054321A1 (ja) 2021-09-29 2022-09-27 接合型ウェーハの剥離方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023214273A Division JP2024029034A (ja) 2021-09-29 2023-12-19 接合型ウェーハの剥離方法

Publications (3)

Publication Number Publication Date
JPWO2023054321A1 true JPWO2023054321A1 (ja) 2023-04-06
JPWO2023054321A5 JPWO2023054321A5 (ja) 2023-09-06
JP7408881B2 JP7408881B2 (ja) 2024-01-05

Family

ID=85782711

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023535613A Active JP7408881B2 (ja) 2021-09-29 2022-09-27 接合型ウェーハの剥離方法
JP2023214273A Pending JP2024029034A (ja) 2021-09-29 2023-12-19 接合型ウェーハの剥離方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023214273A Pending JP2024029034A (ja) 2021-09-29 2023-12-19 接合型ウェーハの剥離方法

Country Status (6)

Country Link
EP (1) EP4411787A1 (ja)
JP (2) JP7408881B2 (ja)
KR (1) KR20240063128A (ja)
CN (2) CN118043942A (ja)
TW (2) TW202315155A (ja)
WO (1) WO2023054321A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042664A (ja) * 2005-07-29 2007-02-15 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2014517518A (ja) * 2011-05-19 2014-07-17 晶能光電（江西）有限公司 窒化ガリウムベースフィルムチップの生産方法および製造方法
JP2016506061A (ja) * 2012-09-05 2016-02-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． デバイスウエハからのキャリアウエハのレーザ剥離

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP2021027301A (ja) 2019-08-08 2021-02-22 信越半導体株式会社 半導体基板の仮接合方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007042664A (ja) * 2005-07-29 2007-02-15 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2014517518A (ja) * 2011-05-19 2014-07-17 晶能光電（江西）有限公司 窒化ガリウムベースフィルムチップの生産方法および製造方法
JP2016506061A (ja) * 2012-09-05 2016-02-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． デバイスウエハからのキャリアウエハのレーザ剥離

Also Published As

Publication number Publication date
EP4411787A1 (en) 2024-08-07
TW202315155A (zh) 2023-04-01
JP7408881B2 (ja) 2024-01-05
CN219591348U (zh) 2023-08-25
TWM645474U (zh) 2023-09-01
KR20240063128A (ko) 2024-05-09
WO2023054321A1 (ja) 2023-04-06
JP2024029034A (ja) 2024-03-05
CN118043942A (zh) 2024-05-14

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