JPWO2022260042A1 - - Google Patents

Info

Publication number
JPWO2022260042A1
JPWO2022260042A1 JP2023527875A JP2023527875A JPWO2022260042A1 JP WO2022260042 A1 JPWO2022260042 A1 JP WO2022260042A1 JP 2023527875 A JP2023527875 A JP 2023527875A JP 2023527875 A JP2023527875 A JP 2023527875A JP WO2022260042 A1 JPWO2022260042 A1 JP WO2022260042A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023527875A
Other versions
JPWO2022260042A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022260042A1 publication Critical patent/JPWO2022260042A1/ja
Publication of JPWO2022260042A5 publication Critical patent/JPWO2022260042A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
JP2023527875A 2021-06-07 2022-06-07 Pending JPWO2022260042A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021095171 2021-06-07
PCT/JP2022/022978 WO2022260042A1 (ja) 2021-06-07 2022-06-07 シャワープレート

Publications (2)

Publication Number Publication Date
JPWO2022260042A1 true JPWO2022260042A1 (ja) 2022-12-15
JPWO2022260042A5 JPWO2022260042A5 (ja) 2024-03-06

Family

ID=84425074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023527875A Pending JPWO2022260042A1 (ja) 2021-06-07 2022-06-07

Country Status (2)

Country Link
JP (1) JPWO2022260042A1 (ja)
WO (1) WO2022260042A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JP3649267B2 (ja) * 1996-10-11 2005-05-18 株式会社荏原製作所 反応ガス噴射ヘッド
JPH11302850A (ja) * 1998-04-17 1999-11-02 Ebara Corp ガス噴射装置
JP2004281648A (ja) * 2003-03-14 2004-10-07 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4877748B2 (ja) * 2006-03-31 2012-02-15 東京エレクトロン株式会社 基板処理装置および処理ガス吐出機構
CN101809717B (zh) * 2007-09-25 2012-10-10 朗姆研究公司 用于等离子处理设备的喷头电极总成的温度控制模块
JPWO2019235282A1 (ja) * 2018-06-07 2021-06-17 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
JP7042170B2 (ja) * 2018-06-22 2022-03-25 日本特殊陶業株式会社 シャワーヘッド用ガス分配体

Also Published As

Publication number Publication date
WO2022260042A1 (ja) 2022-12-15

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Legal Events

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Effective date: 20231204

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Effective date: 20231204