JPWO2022244837A1 - - Google Patents
Info
- Publication number
- JPWO2022244837A1 JPWO2022244837A1 JP2023522713A JP2023522713A JPWO2022244837A1 JP WO2022244837 A1 JPWO2022244837 A1 JP WO2022244837A1 JP 2023522713 A JP2023522713 A JP 2023522713A JP 2023522713 A JP2023522713 A JP 2023522713A JP WO2022244837 A1 JPWO2022244837 A1 JP WO2022244837A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021086027 | 2021-05-21 | ||
| JP2021086027 | 2021-05-21 | ||
| PCT/JP2022/020813 WO2022244837A1 (ja) | 2021-05-21 | 2022-05-19 | 半導体装置の製造方法およびレーザアニール装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022244837A1 true JPWO2022244837A1 (https=) | 2022-11-24 |
| JPWO2022244837A5 JPWO2022244837A5 (https=) | 2023-08-15 |
| JP7618030B2 JP7618030B2 (ja) | 2025-01-20 |
Family
ID=84141677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023522713A Active JP7618030B2 (ja) | 2021-05-21 | 2022-05-19 | 半導体装置の製造方法およびレーザアニール装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7618030B2 (https=) |
| WO (1) | WO2022244837A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283325A (ja) * | 2009-05-07 | 2010-12-16 | Sumitomo Heavy Ind Ltd | 半導体素子の製造方法及びレーザアニール装置 |
| JP2012044046A (ja) * | 2010-08-20 | 2012-03-01 | Sumitomo Heavy Ind Ltd | レーザアニール装置及びレーザアニール方法 |
| WO2019116826A1 (ja) * | 2017-12-15 | 2019-06-20 | 住友重機械工業株式会社 | チャックプレート、アニール装置、及びアニール方法 |
| JP2019145810A (ja) * | 2019-04-01 | 2019-08-29 | 国立大学法人九州大学 | レーザドーピング装置及びレーザドーピング方法 |
| WO2019244665A1 (ja) * | 2018-06-22 | 2019-12-26 | 住友重機械工業株式会社 | 半導体装置のレーザーアニール方法、半導体装置、レーザーアニール方法、レーザーアニール装置の制御装置およびレーザーアニール装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410989B2 (ja) * | 1999-08-02 | 2003-05-26 | 住友重機械工業株式会社 | 精密レーザ照射装置及び制御方法 |
| JP2003045820A (ja) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
| JP5660880B2 (ja) * | 2010-12-20 | 2015-01-28 | 住友重機械工業株式会社 | レーザアニール方法 |
-
2022
- 2022-05-19 JP JP2023522713A patent/JP7618030B2/ja active Active
- 2022-05-19 WO PCT/JP2022/020813 patent/WO2022244837A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283325A (ja) * | 2009-05-07 | 2010-12-16 | Sumitomo Heavy Ind Ltd | 半導体素子の製造方法及びレーザアニール装置 |
| JP2012044046A (ja) * | 2010-08-20 | 2012-03-01 | Sumitomo Heavy Ind Ltd | レーザアニール装置及びレーザアニール方法 |
| WO2019116826A1 (ja) * | 2017-12-15 | 2019-06-20 | 住友重機械工業株式会社 | チャックプレート、アニール装置、及びアニール方法 |
| WO2019244665A1 (ja) * | 2018-06-22 | 2019-12-26 | 住友重機械工業株式会社 | 半導体装置のレーザーアニール方法、半導体装置、レーザーアニール方法、レーザーアニール装置の制御装置およびレーザーアニール装置 |
| JP2019145810A (ja) * | 2019-04-01 | 2019-08-29 | 国立大学法人九州大学 | レーザドーピング装置及びレーザドーピング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022244837A1 (ja) | 2022-11-24 |
| JP7618030B2 (ja) | 2025-01-20 |
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