JPWO2022239626A1 - - Google Patents

Info

Publication number
JPWO2022239626A1
JPWO2022239626A1 JP2023520953A JP2023520953A JPWO2022239626A1 JP WO2022239626 A1 JPWO2022239626 A1 JP WO2022239626A1 JP 2023520953 A JP2023520953 A JP 2023520953A JP 2023520953 A JP2023520953 A JP 2023520953A JP WO2022239626 A1 JPWO2022239626 A1 JP WO2022239626A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023520953A
Other languages
Japanese (ja)
Other versions
JPWO2022239626A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022239626A1 publication Critical patent/JPWO2022239626A1/ja
Publication of JPWO2022239626A5 publication Critical patent/JPWO2022239626A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/468—Circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
JP2023520953A 2021-05-10 2022-04-25 Pending JPWO2022239626A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021079550 2021-05-10
PCT/JP2022/018652 WO2022239626A1 (ja) 2021-05-10 2022-04-25 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022239626A1 true JPWO2022239626A1 (https=) 2022-11-17
JPWO2022239626A5 JPWO2022239626A5 (https=) 2025-03-17

Family

ID=84029547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023520953A Pending JPWO2022239626A1 (https=) 2021-05-10 2022-04-25

Country Status (5)

Country Link
US (1) US12261595B2 (https=)
JP (1) JPWO2022239626A1 (https=)
CN (1) CN117337490A (https=)
DE (1) DE112022001871T5 (https=)
WO (1) WO2022239626A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023079820A1 (https=) * 2021-11-08 2023-05-11
JP7851234B2 (ja) * 2022-12-02 2026-04-24 三菱電機株式会社 半導体装置
WO2025182584A1 (ja) * 2024-03-01 2025-09-04 ローム株式会社 半導体装置
WO2026042545A1 (ja) * 2024-08-21 2026-02-26 ローム株式会社 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013125806A (ja) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp 電力用半導体装置
JP2016225696A (ja) * 2015-05-27 2016-12-28 株式会社デンソー 駆動装置
JP2017059667A (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
JP2017195259A (ja) * 2016-04-19 2017-10-26 株式会社デンソー 半導体モジュール、及び電力変換装置
JP2018046255A (ja) * 2016-09-16 2018-03-22 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354156A (ja) * 1991-05-31 1992-12-08 Fuji Electric Co Ltd 半導体スイッチング装置
JP5925364B2 (ja) * 2015-05-11 2016-05-25 三菱電機株式会社 電力用半導体装置
DE102017105712B4 (de) * 2017-03-16 2025-05-22 Infineon Technologies Austria Ag Transistorbauelement
JP6873791B2 (ja) 2017-03-31 2021-05-19 ローム株式会社 パワーモジュールおよびその製造方法
JP6930361B2 (ja) * 2017-10-20 2021-09-01 株式会社デンソー スイッチの駆動回路
JP7317492B2 (ja) * 2018-11-16 2023-07-31 東芝インフラシステムズ株式会社 半導体スイッチ回路、インバータ回路、および、チョッパ回路
JP7099312B2 (ja) * 2018-12-26 2022-07-12 株式会社デンソー スイッチの駆動装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013125806A (ja) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp 電力用半導体装置
JP2016225696A (ja) * 2015-05-27 2016-12-28 株式会社デンソー 駆動装置
JP2017059667A (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
JP2017195259A (ja) * 2016-04-19 2017-10-26 株式会社デンソー 半導体モジュール、及び電力変換装置
JP2018046255A (ja) * 2016-09-16 2018-03-22 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US20240007097A1 (en) 2024-01-04
US12261595B2 (en) 2025-03-25
DE112022001871T5 (de) 2024-02-01
WO2022239626A1 (ja) 2022-11-17
CN117337490A (zh) 2024-01-02

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