JPWO2022230293A1 - - Google Patents

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Publication number
JPWO2022230293A1
JPWO2022230293A1 JP2023517066A JP2023517066A JPWO2022230293A1 JP WO2022230293 A1 JPWO2022230293 A1 JP WO2022230293A1 JP 2023517066 A JP2023517066 A JP 2023517066A JP 2023517066 A JP2023517066 A JP 2023517066A JP WO2022230293 A1 JPWO2022230293 A1 JP WO2022230293A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023517066A
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Japanese (ja)
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JP7846096B2 (ja
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Publication of JPWO2022230293A1 publication Critical patent/JPWO2022230293A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
JP2023517066A 2021-04-30 2022-02-08 半導体装置 Active JP7846096B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021077976 2021-04-30
JP2021077976 2021-04-30
PCT/JP2022/004902 WO2022230293A1 (ja) 2021-04-30 2022-02-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022230293A1 true JPWO2022230293A1 (https=) 2022-11-03
JP7846096B2 JP7846096B2 (ja) 2026-04-14

Family

ID=83848278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023517066A Active JP7846096B2 (ja) 2021-04-30 2022-02-08 半導体装置

Country Status (4)

Country Link
US (1) US20240204093A1 (https=)
JP (1) JP7846096B2 (https=)
CN (1) CN117203776A (https=)
WO (1) WO2022230293A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025501019A (ja) * 2021-12-20 2025-01-15 モンデ ワイヤレス インコーポレイテッド Ｒｆ集積回路用半導体デバイス
CN118630046A (zh) * 2023-03-09 2024-09-10 苏州晶湛半导体有限公司 一种半导体结构及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134478A (ja) * 1982-02-04 1983-08-10 Sanyo Electric Co Ltd 化合物半導体ｆｅｔの製造方法
JPS61260679A (ja) * 1985-05-15 1986-11-18 Fujitsu Ltd 電界効果トランジスタ
JPH03191534A (ja) * 1989-12-21 1991-08-21 Nec Corp 電界効果トランジスタおよびその製造方法
JPH05114615A (ja) * 1991-10-21 1993-05-07 Rohm Co Ltd 化合物半導体装置及びその製造方法
JPH05275453A (ja) * 1992-01-16 1993-10-22 Samsung Electron Co Ltd 接合ｆｅｔ及びその製造方法
JPH08111519A (ja) * 1994-08-19 1996-04-30 Fujitsu Ltd 半導体装置
JP2001093914A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 半導体能動素子及び半導体集積回路
JP2013182993A (ja) * 2012-03-01 2013-09-12 Toshiba Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176195A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 窒化物半導体装置
JP6341679B2 (ja) * 2014-02-06 2018-06-13 ルネサスエレクトロニクス株式会社 半導体装置
TWI736600B (zh) * 2017-03-31 2021-08-21 聯穎光電股份有限公司 高電子遷移率電晶體

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134478A (ja) * 1982-02-04 1983-08-10 Sanyo Electric Co Ltd 化合物半導体ｆｅｔの製造方法
JPS61260679A (ja) * 1985-05-15 1986-11-18 Fujitsu Ltd 電界効果トランジスタ
JPH03191534A (ja) * 1989-12-21 1991-08-21 Nec Corp 電界効果トランジスタおよびその製造方法
JPH05114615A (ja) * 1991-10-21 1993-05-07 Rohm Co Ltd 化合物半導体装置及びその製造方法
JPH05275453A (ja) * 1992-01-16 1993-10-22 Samsung Electron Co Ltd 接合ｆｅｔ及びその製造方法
JPH08111519A (ja) * 1994-08-19 1996-04-30 Fujitsu Ltd 半導体装置
JP2001093914A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 半導体能動素子及び半導体集積回路
JP2013182993A (ja) * 2012-03-01 2013-09-12 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
US20240204093A1 (en) 2024-06-20
CN117203776A (zh) 2023-12-08
JP7846096B2 (ja) 2026-04-14
WO2022230293A1 (ja) 2022-11-03

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