JPWO2022149183A5 - - Google Patents
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- Publication number
- JPWO2022149183A5 JPWO2022149183A5 JP2022573814A JP2022573814A JPWO2022149183A5 JP WO2022149183 A5 JPWO2022149183 A5 JP WO2022149183A5 JP 2022573814 A JP2022573814 A JP 2022573814A JP 2022573814 A JP2022573814 A JP 2022573814A JP WO2022149183 A5 JPWO2022149183 A5 JP WO2022149183A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- region
- emitting device
- sapphire substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 description 6
- 238000001194 electroluminescence spectrum Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000731 high angular annular dark-field scanning transmission electron microscopy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/000078 WO2022149183A1 (fr) | 2021-01-05 | 2021-01-05 | Procédé de production d'élément électroluminescent ultraviolet à semi-conducteur au nitrure, et élément électroluminescent ultraviolet à semi-conducteur au nitrure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022149183A1 JPWO2022149183A1 (fr) | 2022-07-14 |
| JPWO2022149183A5 true JPWO2022149183A5 (fr) | 2023-12-19 |
Family
ID=82358113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022573814A Pending JPWO2022149183A1 (fr) | 2021-01-05 | 2021-01-05 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2022149183A1 (fr) |
| TW (1) | TW202243282A (fr) |
| WO (1) | WO2022149183A1 (fr) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101945140B1 (ko) * | 2015-04-03 | 2019-02-01 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 및 질화물 반도체 자외선 발광 장치 |
| JP6686172B2 (ja) * | 2017-11-22 | 2020-04-22 | 創光科学株式会社 | 窒化物半導体発光素子 |
-
2021
- 2021-01-05 JP JP2022573814A patent/JPWO2022149183A1/ja active Pending
- 2021-01-05 WO PCT/JP2021/000078 patent/WO2022149183A1/fr active Application Filing
- 2021-11-02 TW TW110140773A patent/TW202243282A/zh unknown
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