JPWO2022144678A1 - - Google Patents

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Publication number
JPWO2022144678A1
JPWO2022144678A1 JP2022572814A JP2022572814A JPWO2022144678A1 JP WO2022144678 A1 JPWO2022144678 A1 JP WO2022144678A1 JP 2022572814 A JP2022572814 A JP 2022572814A JP 2022572814 A JP2022572814 A JP 2022572814A JP WO2022144678 A1 JPWO2022144678 A1 JP WO2022144678A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022572814A
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Japanese (ja)
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JPWO2022144678A5 (ja
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Publication of JPWO2022144678A1 publication Critical patent/JPWO2022144678A1/ja
Publication of JPWO2022144678A5 publication Critical patent/JPWO2022144678A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • H10K39/34Organic image sensors integrated with organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • H10K50/157Hole transporting layers between the light-emitting layer and the cathode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • H10K50/167Electron transporting layers between the light-emitting layer and the anode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/331Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/371Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/381Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/85Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/86Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
JP2022572814A 2021-12-17 光デバイス Pending JPWO2022144678A5 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020219883 2020-12-29
PCT/IB2021/061896 WO2022144678A1 (ja) 2020-12-29 2021-12-17 光デバイス、表示装置、及び電子機器

Publications (2)

Publication Number Publication Date
JPWO2022144678A1 true JPWO2022144678A1 (https=) 2022-07-07
JPWO2022144678A5 JPWO2022144678A5 (ja) 2024-12-16

Family

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Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007024994A (ja) * 2005-07-12 2007-02-01 Matsushita Electric Ind Co Ltd 走査方法
JP2008016831A (ja) * 2006-06-09 2008-01-24 Sumitomo Chemical Co Ltd 光−光変換デバイス
JP2008532301A (ja) * 2005-03-04 2008-08-14 へリアテック ゲーエムベーハー 有機光活性装置
JP2009218599A (ja) * 2008-03-11 2009-09-24 Samsung Electronics Co Ltd 有機光電変換膜およびそれを備える光電変換素子
JP2011142318A (ja) * 2009-12-11 2011-07-21 Konica Minolta Holdings Inc 有機光電変換素子及び有機光電変換素子の製造方法
US20130105768A1 (en) * 2011-10-31 2013-05-02 Samsung Electronics Co., Ltd. Photodiode
US20130112947A1 (en) * 2011-11-07 2013-05-09 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
WO2014024582A1 (ja) * 2012-08-09 2014-02-13 ソニー株式会社 受発光素子及び受発光装置
KR20150051125A (ko) * 2013-11-01 2015-05-11 서울대학교산학협력단 연결 유닛을 포함하는 적층형 유기태양전지
WO2016027675A1 (ja) * 2014-08-20 2016-02-25 東レ株式会社 光電変換素子ならびにそれを用いたイメージセンサ、太陽電池、単色検知センサおよびフレキシブルセンサ
JP2018510845A (ja) * 2015-01-27 2018-04-19 ソニー株式会社 有機フォトダイオード中の有機光電変換層の材料としてのスクアラインおよびチオフェン系分子
WO2019182142A1 (ja) * 2018-03-23 2019-09-26 住友化学株式会社 光電変換素子
US20200035764A1 (en) * 2018-07-26 2020-01-30 Boe Technology Group Co., Ltd. Diode device and method for manufacturing the same, and diode apparatus
WO2022044589A1 (ja) * 2020-08-31 2022-03-03 東レ株式会社 受発光素子、これを用いた電子デバイスおよび生体センシングデバイス

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008532301A (ja) * 2005-03-04 2008-08-14 へリアテック ゲーエムベーハー 有機光活性装置
JP2007024994A (ja) * 2005-07-12 2007-02-01 Matsushita Electric Ind Co Ltd 走査方法
JP2008016831A (ja) * 2006-06-09 2008-01-24 Sumitomo Chemical Co Ltd 光−光変換デバイス
JP2009218599A (ja) * 2008-03-11 2009-09-24 Samsung Electronics Co Ltd 有機光電変換膜およびそれを備える光電変換素子
JP2011142318A (ja) * 2009-12-11 2011-07-21 Konica Minolta Holdings Inc 有機光電変換素子及び有機光電変換素子の製造方法
US20130105768A1 (en) * 2011-10-31 2013-05-02 Samsung Electronics Co., Ltd. Photodiode
US20130112947A1 (en) * 2011-11-07 2013-05-09 Samsung Electronics Co., Ltd. Organic photoelectronic device and image sensor
WO2014024582A1 (ja) * 2012-08-09 2014-02-13 ソニー株式会社 受発光素子及び受発光装置
KR20150051125A (ko) * 2013-11-01 2015-05-11 서울대학교산학협력단 연결 유닛을 포함하는 적층형 유기태양전지
WO2016027675A1 (ja) * 2014-08-20 2016-02-25 東レ株式会社 光電変換素子ならびにそれを用いたイメージセンサ、太陽電池、単色検知センサおよびフレキシブルセンサ
JP2018510845A (ja) * 2015-01-27 2018-04-19 ソニー株式会社 有機フォトダイオード中の有機光電変換層の材料としてのスクアラインおよびチオフェン系分子
WO2019182142A1 (ja) * 2018-03-23 2019-09-26 住友化学株式会社 光電変換素子
US20200035764A1 (en) * 2018-07-26 2020-01-30 Boe Technology Group Co., Ltd. Diode device and method for manufacturing the same, and diode apparatus
WO2022044589A1 (ja) * 2020-08-31 2022-03-03 東レ株式会社 受発光素子、これを用いた電子デバイスおよび生体センシングデバイス

Also Published As

Publication number Publication date
WO2022144678A1 (ja) 2022-07-07
US20240121976A1 (en) 2024-04-11

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