JPWO2022131186A1 - - Google Patents

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Publication number
JPWO2022131186A1
JPWO2022131186A1 JP2022569967A JP2022569967A JPWO2022131186A1 JP WO2022131186 A1 JPWO2022131186 A1 JP WO2022131186A1 JP 2022569967 A JP2022569967 A JP 2022569967A JP 2022569967 A JP2022569967 A JP 2022569967A JP WO2022131186 A1 JPWO2022131186 A1 JP WO2022131186A1
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JP
Japan
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JP2022569967A
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JPWO2022131186A5 (ja
JP7342288B2 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022569967A 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 Active JP7342288B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020210578 2020-12-18
JP2020210578 2020-12-18
JP2021067187 2021-04-12
JP2021067187 2021-04-12
PCT/JP2021/045736 WO2022131186A1 (ja) 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液

Publications (3)

Publication Number Publication Date
JPWO2022131186A1 true JPWO2022131186A1 (ja) 2022-06-23
JPWO2022131186A5 JPWO2022131186A5 (ja) 2023-08-14
JP7342288B2 JP7342288B2 (ja) 2023-09-11

Family

ID=82057813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022569967A Active JP7342288B2 (ja) 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液

Country Status (5)

Country Link
US (1) US20240087911A1 (ja)
JP (1) JP7342288B2 (ja)
KR (1) KR102658517B1 (ja)
TW (1) TWI847080B (ja)
WO (1) WO2022131186A1 (ja)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056876A (ja) * 1991-06-27 1993-01-14 Hitachi Ltd エツチング方法および装置
JPH07216564A (ja) * 1994-02-02 1995-08-15 Hitachi Chem Co Ltd 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法
JPH0881222A (ja) * 1994-07-15 1996-03-26 Ishihara Sangyo Kaisha Ltd 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子
JP2000183015A (ja) * 1998-12-14 2000-06-30 Toshiba Corp 半導体基板の洗浄方法及び洗浄装置
JP2001230230A (ja) * 1999-11-29 2001-08-24 Applied Materials Inc 欠陥低減のための平坦化された銅のクリーニング
JP2003008199A (ja) * 2001-06-13 2003-01-10 Internatl Business Mach Corp <Ibm> プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP2004137594A (ja) * 2002-08-21 2004-05-13 Casio Micronics Co Ltd 化学処理方法及び化学処理装置
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) * 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
CN102592983A (zh) * 2012-02-07 2012-07-18 中国科学院上海技术物理研究所 Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法
JP2014053644A (ja) * 2013-12-11 2014-03-20 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2018181984A (ja) * 2017-04-07 2018-11-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020179449A1 (ja) * 2019-03-01 2020-09-10 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP6992095B2 (ja) * 2018-02-05 2022-01-13 富士フイルム株式会社 基板の処理方法、半導体装置の製造方法、基板処理用キット
JP7301055B2 (ja) * 2018-09-06 2023-06-30 富士フイルム株式会社 薬液、基板の処理方法

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056876A (ja) * 1991-06-27 1993-01-14 Hitachi Ltd エツチング方法および装置
JPH07216564A (ja) * 1994-02-02 1995-08-15 Hitachi Chem Co Ltd 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法
JPH0881222A (ja) * 1994-07-15 1996-03-26 Ishihara Sangyo Kaisha Ltd 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子
JP2000183015A (ja) * 1998-12-14 2000-06-30 Toshiba Corp 半導体基板の洗浄方法及び洗浄装置
JP2001230230A (ja) * 1999-11-29 2001-08-24 Applied Materials Inc 欠陥低減のための平坦化された銅のクリーニング
JP2003008199A (ja) * 2001-06-13 2003-01-10 Internatl Business Mach Corp <Ibm> プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP2004137594A (ja) * 2002-08-21 2004-05-13 Casio Micronics Co Ltd 化学処理方法及び化学処理装置
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) * 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
CN102592983A (zh) * 2012-02-07 2012-07-18 中国科学院上海技术物理研究所 Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法
JP2014053644A (ja) * 2013-12-11 2014-03-20 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2018181984A (ja) * 2017-04-07 2018-11-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020179449A1 (ja) * 2019-03-01 2020-09-10 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置

Also Published As

Publication number Publication date
TW202231925A (zh) 2022-08-16
US20240087911A1 (en) 2024-03-14
TWI847080B (zh) 2024-07-01
WO2022131186A1 (ja) 2022-06-23
KR20230105686A (ko) 2023-07-11
JP7342288B2 (ja) 2023-09-11
KR102658517B1 (ko) 2024-04-17

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