JPWO2022107368A5 - - Google Patents

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JPWO2022107368A5
JPWO2022107368A5 JP2022563563A JP2022563563A JPWO2022107368A5 JP WO2022107368 A5 JPWO2022107368 A5 JP WO2022107368A5 JP 2022563563 A JP2022563563 A JP 2022563563A JP 2022563563 A JP2022563563 A JP 2022563563A JP WO2022107368 A5 JPWO2022107368 A5 JP WO2022107368A5
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Japan
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region
implantation
dopant
semiconductor substrate
semiconductor device
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JP2022563563A
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English (en)
Japanese (ja)
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JPWO2022107368A1 (https=
JP7567932B2 (ja
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Priority claimed from PCT/JP2021/021995 external-priority patent/WO2022107368A1/ja
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JP2022563563A 2020-11-17 2021-06-09 半導体装置の製造方法 Active JP7567932B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020190961 2020-11-17
JP2020190961 2020-11-17
PCT/JP2021/021995 WO2022107368A1 (ja) 2020-11-17 2021-06-09 半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022107368A1 JPWO2022107368A1 (https=) 2022-05-27
JPWO2022107368A5 true JPWO2022107368A5 (https=) 2023-01-26
JP7567932B2 JP7567932B2 (ja) 2024-10-16

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JP2022563563A Active JP7567932B2 (ja) 2020-11-17 2021-06-09 半導体装置の製造方法

Country Status (4)

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US (1) US20230144542A1 (https=)
JP (1) JP7567932B2 (https=)
DE (1) DE112021001360T5 (https=)
WO (1) WO2022107368A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
WO2026049049A1 (ja) * 2024-09-02 2026-03-05 富士電機株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165468A (ja) * 2002-11-14 2004-06-10 Sharp Corp 半導体装置とその製造方法
WO2013089256A1 (ja) 2011-12-15 2013-06-20 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6413938B2 (ja) * 2015-06-05 2018-10-31 信越半導体株式会社 半導体基板の評価方法
US10411093B2 (en) 2015-12-28 2019-09-10 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
CN108292605B (zh) * 2016-06-24 2021-08-27 富士电机株式会社 半导体装置的制造方法和半导体装置
WO2018030440A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6784148B2 (ja) 2016-11-10 2020-11-11 三菱電機株式会社 半導体装置、絶縁ゲート型バイポーラトランジスタ、絶縁ゲート型バイポーラトランジスタの製造方法
CN112055887B (zh) * 2018-11-16 2024-06-25 富士电机株式会社 半导体装置及制造方法

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