JPWO2022080271A1 - - Google Patents

Info

Publication number
JPWO2022080271A1
JPWO2022080271A1 JP2022556929A JP2022556929A JPWO2022080271A1 JP WO2022080271 A1 JPWO2022080271 A1 JP WO2022080271A1 JP 2022556929 A JP2022556929 A JP 2022556929A JP 2022556929 A JP2022556929 A JP 2022556929A JP WO2022080271 A1 JPWO2022080271 A1 JP WO2022080271A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022556929A
Other languages
Japanese (ja)
Other versions
JP7775835B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022080271A1 publication Critical patent/JPWO2022080271A1/ja
Application granted granted Critical
Publication of JP7775835B2 publication Critical patent/JP7775835B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Bipolar Transistors (AREA)
JP2022556929A 2020-10-15 2021-10-08 エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法 Active JP7775835B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173918 2020-10-15
JP2020173918 2020-10-15
PCT/JP2021/037425 WO2022080271A1 (ja) 2020-10-15 2021-10-08 エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022080271A1 true JPWO2022080271A1 (https=) 2022-04-21
JP7775835B2 JP7775835B2 (ja) 2025-11-26

Family

ID=81208142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022556929A Active JP7775835B2 (ja) 2020-10-15 2021-10-08 エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法

Country Status (8)

Country Link
US (1) US20230374381A1 (https=)
EP (1) EP4231333A4 (https=)
JP (1) JP7775835B2 (https=)
KR (1) KR102828127B1 (https=)
CN (1) CN116325088A (https=)
IL (1) IL302125A (https=)
TW (1) TWI796803B (https=)
WO (1) WO2022080271A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度2,2−ジフルオロブタン
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
WO2017169809A1 (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7341764B2 (en) * 2001-11-08 2008-03-11 Zeon Corporation Gas for plasma reaction, process for producing the same, and use
KR20070018964A (ko) * 2004-05-31 2007-02-14 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 드라이 에칭 가스 및 드라이 에칭 방법
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US10109496B2 (en) 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases
TWI658509B (zh) * 2014-06-18 2019-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude 用於tsv/mems/功率元件蝕刻的化學物質
JP2016051777A (ja) 2014-08-29 2016-04-11 日本ゼオン株式会社 シリコン酸化膜のプラズマエッチング方法
TWI670768B (zh) * 2014-10-30 2019-09-01 日商日本瑞翁股份有限公司 電漿蝕刻方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度2,2−ジフルオロブタン
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
WO2017169809A1 (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法

Also Published As

Publication number Publication date
WO2022080271A1 (ja) 2022-04-21
KR20230066073A (ko) 2023-05-12
JP7775835B2 (ja) 2025-11-26
TWI796803B (zh) 2023-03-21
EP4231333A1 (en) 2023-08-23
IL302125A (en) 2023-06-01
TW202224017A (zh) 2022-06-16
CN116325088A (zh) 2023-06-23
US20230374381A1 (en) 2023-11-23
EP4231333A4 (en) 2024-11-13
KR102828127B1 (ko) 2025-07-03

Similar Documents

Publication Publication Date Title
BR112023012656A2 (https=)
BR112023009656A2 (https=)
JPWO2022080268A1 (https=)
BR112023011738A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
JPWO2022080272A1 (https=)
JPWO2022080271A1 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021016375A2 (https=)
BR102021016200A2 (https=)
BR102021016176A2 (https=)
BR102021015566A2 (https=)
BR102021015220A2 (https=)
BR102021015247A2 (https=)
BR102021014044A2 (https=)
BR102021014056A2 (https=)

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20230131

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20230201

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20230307

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240819

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250826

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251014

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251027

R150 Certificate of patent or registration of utility model

Ref document number: 7775835

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150