IL302125A - Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element - Google Patents
Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor elementInfo
- Publication number
- IL302125A IL302125A IL302125A IL30212523A IL302125A IL 302125 A IL302125 A IL 302125A IL 302125 A IL302125 A IL 302125A IL 30212523 A IL30212523 A IL 30212523A IL 302125 A IL302125 A IL 302125A
- Authority
- IL
- Israel
- Prior art keywords
- etching
- gas
- fluorobutene
- etched
- less
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020173918 | 2020-10-15 | ||
| PCT/JP2021/037425 WO2022080271A1 (ja) | 2020-10-15 | 2021-10-08 | エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL302125A true IL302125A (en) | 2023-06-01 |
Family
ID=81208142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL302125A IL302125A (en) | 2020-10-15 | 2021-10-08 | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230374381A1 (https=) |
| EP (1) | EP4231333A4 (https=) |
| JP (1) | JP7775835B2 (https=) |
| KR (1) | KR102828127B1 (https=) |
| CN (1) | CN116325088A (https=) |
| IL (1) | IL302125A (https=) |
| TW (1) | TWI796803B (https=) |
| WO (1) | WO2022080271A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7341764B2 (en) * | 2001-11-08 | 2008-03-11 | Zeon Corporation | Gas for plasma reaction, process for producing the same, and use |
| KR20070018964A (ko) * | 2004-05-31 | 2007-02-14 | 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 | 드라이 에칭 가스 및 드라이 에칭 방법 |
| WO2009041560A1 (ja) | 2007-09-28 | 2009-04-02 | Zeon Corporation | プラズマエッチング方法 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| CN104885203B (zh) | 2012-10-30 | 2017-08-01 | 乔治洛德方法研究和开发液化空气有限公司 | 用于高纵横比氧化物蚀刻的氟碳分子 |
| JP2014185111A (ja) * | 2013-03-25 | 2014-10-02 | Nippon Zeon Co Ltd | 高純度２，２−ジフルオロブタン |
| US10109496B2 (en) | 2013-12-30 | 2018-10-23 | The Chemours Company Fc, Llc | Chamber cleaning and semiconductor etching gases |
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| JP2016051777A (ja) | 2014-08-29 | 2016-04-11 | 日本ゼオン株式会社 | シリコン酸化膜のプラズマエッチング方法 |
| TWI670768B (zh) * | 2014-10-30 | 2019-09-01 | 日商日本瑞翁股份有限公司 | 電漿蝕刻方法 |
| JP6822763B2 (ja) * | 2015-11-16 | 2021-01-27 | セントラル硝子株式会社 | ドライエッチング方法 |
| EP3437709A4 (en) * | 2016-03-30 | 2020-03-04 | Zeon Corporation | FILTER, METHOD FOR PRODUCING THE SAME, DRY-ETCHING DEVICE AND DRY-ETCHING METHOD |
-
2021
- 2021-10-08 CN CN202180069821.9A patent/CN116325088A/zh active Pending
- 2021-10-08 JP JP2022556929A patent/JP7775835B2/ja active Active
- 2021-10-08 KR KR1020237012111A patent/KR102828127B1/ko active Active
- 2021-10-08 WO PCT/JP2021/037425 patent/WO2022080271A1/ja not_active Ceased
- 2021-10-08 EP EP21880010.0A patent/EP4231333A4/en active Pending
- 2021-10-08 US US18/031,471 patent/US20230374381A1/en active Pending
- 2021-10-08 IL IL302125A patent/IL302125A/en unknown
- 2021-10-15 TW TW110138290A patent/TWI796803B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022080271A1 (ja) | 2022-04-21 |
| KR20230066073A (ko) | 2023-05-12 |
| JPWO2022080271A1 (https=) | 2022-04-21 |
| JP7775835B2 (ja) | 2025-11-26 |
| TWI796803B (zh) | 2023-03-21 |
| EP4231333A1 (en) | 2023-08-23 |
| TW202224017A (zh) | 2022-06-16 |
| CN116325088A (zh) | 2023-06-23 |
| US20230374381A1 (en) | 2023-11-23 |
| EP4231333A4 (en) | 2024-11-13 |
| KR102828127B1 (ko) | 2025-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL302124A (en) | Etching gas, etching method and method for manufacturing a semiconductor device | |
| IL298826A (en) | Etching method and semiconductor component manufacturing method | |
| IL302125A (en) | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element | |
| IL176808A (en) | Stress free etch processing in combination with a dynamic liquid meniscus | |
| IL302116A (en) | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element | |
| US8691701B2 (en) | Strip with reduced low-K dielectric damage | |
| JP7786388B2 (ja) | エッチングガス、エッチング方法、及び半導体素子の製造方法 | |
| IL287669B1 (en) | Metal removal method, dry etching method, and production method for semiconductor element | |
| IL294957A (en) | burning method | |
| IL300634A (en) | Gas separation method and gas separation device | |
| IL299126B2 (en) | Plasma etching method and method for manufacturing semiconductor element | |
| IL302225A (en) | Etching method and method for manufacturing a semiconductor element | |
| IL305734A (en) | Etching gas and method for etching |