CN116325088A - 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法 - Google Patents

蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法 Download PDF

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Publication number
CN116325088A
CN116325088A CN202180069821.9A CN202180069821A CN116325088A CN 116325088 A CN116325088 A CN 116325088A CN 202180069821 A CN202180069821 A CN 202180069821A CN 116325088 A CN116325088 A CN 116325088A
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CN
China
Prior art keywords
etching
gas
etched
fluorobutene
etching gas
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Pending
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CN202180069821.9A
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English (en)
Chinese (zh)
Inventor
铃木淳
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Resonac Corp
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Resonac Corp
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Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Publication of CN116325088A publication Critical patent/CN116325088A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Bipolar Transistors (AREA)
CN202180069821.9A 2020-10-15 2021-10-08 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法 Pending CN116325088A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173918 2020-10-15
JP2020-173918 2020-10-15
PCT/JP2021/037425 WO2022080271A1 (ja) 2020-10-15 2021-10-08 エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法

Publications (1)

Publication Number Publication Date
CN116325088A true CN116325088A (zh) 2023-06-23

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CN202180069821.9A Pending CN116325088A (zh) 2020-10-15 2021-10-08 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法

Country Status (8)

Country Link
US (1) US20230374381A1 (https=)
EP (1) EP4231333A4 (https=)
JP (1) JP7775835B2 (https=)
KR (1) KR102828127B1 (https=)
CN (1) CN116325088A (https=)
IL (1) IL302125A (https=)
TW (1) TWI796803B (https=)
WO (1) WO2022080271A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050092240A1 (en) * 2001-11-08 2005-05-05 Mitsuru Sugawara Gas for plasma reaction, process for producing the same, and use
TW200926294A (en) * 2007-09-28 2009-06-16 Zeon Corp Method of plasma etching
CN106663624A (zh) * 2014-06-18 2017-05-10 乔治洛德方法研究和开发液化空气有限公司 用于tsv/mems/功率器件蚀刻的化学物质
CN107112232A (zh) * 2014-10-30 2017-08-29 日本瑞翁株式会社 等离子体蚀刻方法
CN107275206A (zh) * 2012-10-30 2017-10-20 乔治洛德方法研究和开发液化空气有限公司 用于高纵横比氧化物蚀刻的氟碳分子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070018964A (ko) * 2004-05-31 2007-02-14 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 드라이 에칭 가스 및 드라이 에칭 방법
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
US10109496B2 (en) 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases
JP2016051777A (ja) 2014-08-29 2016-04-11 日本ゼオン株式会社 シリコン酸化膜のプラズマエッチング方法
JP6822763B2 (ja) * 2015-11-16 2021-01-27 セントラル硝子株式会社 ドライエッチング方法
EP3437709A4 (en) * 2016-03-30 2020-03-04 Zeon Corporation FILTER, METHOD FOR PRODUCING THE SAME, DRY-ETCHING DEVICE AND DRY-ETCHING METHOD

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050092240A1 (en) * 2001-11-08 2005-05-05 Mitsuru Sugawara Gas for plasma reaction, process for producing the same, and use
TW200926294A (en) * 2007-09-28 2009-06-16 Zeon Corp Method of plasma etching
CN107275206A (zh) * 2012-10-30 2017-10-20 乔治洛德方法研究和开发液化空气有限公司 用于高纵横比氧化物蚀刻的氟碳分子
CN106663624A (zh) * 2014-06-18 2017-05-10 乔治洛德方法研究和开发液化空气有限公司 用于tsv/mems/功率器件蚀刻的化学物质
CN107112232A (zh) * 2014-10-30 2017-08-29 日本瑞翁株式会社 等离子体蚀刻方法

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Publication number Publication date
WO2022080271A1 (ja) 2022-04-21
KR20230066073A (ko) 2023-05-12
JPWO2022080271A1 (https=) 2022-04-21
JP7775835B2 (ja) 2025-11-26
TWI796803B (zh) 2023-03-21
EP4231333A1 (en) 2023-08-23
IL302125A (en) 2023-06-01
TW202224017A (zh) 2022-06-16
US20230374381A1 (en) 2023-11-23
EP4231333A4 (en) 2024-11-13
KR102828127B1 (ko) 2025-07-03

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