JPWO2022025161A1 - - Google Patents

Info

Publication number
JPWO2022025161A1
JPWO2022025161A1 JP2022539549A JP2022539549A JPWO2022025161A1 JP WO2022025161 A1 JPWO2022025161 A1 JP WO2022025161A1 JP 2022539549 A JP2022539549 A JP 2022539549A JP 2022539549 A JP2022539549 A JP 2022539549A JP WO2022025161 A1 JPWO2022025161 A1 JP WO2022025161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022539549A
Other versions
JPWO2022025161A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022025161A1 publication Critical patent/JPWO2022025161A1/ja
Publication of JPWO2022025161A5 publication Critical patent/JPWO2022025161A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
JP2022539549A 2020-07-31 2021-07-29 Pending JPWO2022025161A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020130711 2020-07-31
PCT/JP2021/028028 WO2022025161A1 (ja) 2020-07-31 2021-07-29 シリコンエッチング液、並びに該エッチング液を用いたシリコンデバイスの製造方法およびシリコン基板の処理方法

Publications (2)

Publication Number Publication Date
JPWO2022025161A1 true JPWO2022025161A1 (ja) 2022-02-03
JPWO2022025161A5 JPWO2022025161A5 (ja) 2024-08-06

Family

ID=80035782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022539549A Pending JPWO2022025161A1 (ja) 2020-07-31 2021-07-29

Country Status (5)

Country Link
US (1) US20230295499A1 (ja)
JP (1) JPWO2022025161A1 (ja)
KR (1) KR20230043139A (ja)
TW (1) TW202208596A (ja)
WO (1) WO2022025161A1 (ja)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000160367A (ja) * 1998-11-24 2000-06-13 Daikin Ind Ltd エッチレートが高速化されたエッチング液
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US7166539B2 (en) * 2003-07-22 2007-01-23 Micron Technology, Inc. Wet etching method of removing silicon from a substrate
JP2006059908A (ja) * 2004-08-18 2006-03-02 Mitsubishi Gas Chem Co Inc 洗浄液および洗浄法。
JP2009032815A (ja) * 2007-07-25 2009-02-12 Asahi Kasei Chemicals Corp シリコンウエハーエッチング用苛性ソーダ水溶液
JP5339880B2 (ja) 2008-12-11 2013-11-13 株式会社新菱 シリコン基板のエッチング液およびシリコン基板の表面加工方法
JP2012227304A (ja) 2011-04-19 2012-11-15 Hayashi Junyaku Kogyo Kk エッチング液組成物およびエッチング方法
JP5439466B2 (ja) * 2011-12-26 2014-03-12 富士フイルム株式会社 シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
JP6556935B2 (ja) * 2015-07-09 2019-08-07 インテグリス・インコーポレーテッド ゲルマニウムに比べてシリコンゲルマニウムを選択的にエッチングする配合物
US10934485B2 (en) 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Also Published As

Publication number Publication date
TW202208596A (zh) 2022-03-01
WO2022025161A1 (ja) 2022-02-03
US20230295499A1 (en) 2023-09-21
KR20230043139A (ko) 2023-03-30

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240729

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240729