JPWO2022023866A1 - - Google Patents

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Publication number
JPWO2022023866A1
JPWO2022023866A1 JP2022539784A JP2022539784A JPWO2022023866A1 JP WO2022023866 A1 JPWO2022023866 A1 JP WO2022023866A1 JP 2022539784 A JP2022539784 A JP 2022539784A JP 2022539784 A JP2022539784 A JP 2022539784A JP WO2022023866 A1 JPWO2022023866 A1 JP WO2022023866A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022539784A
Other languages
Japanese (ja)
Other versions
JP7724221B2 (ja
JPWO2022023866A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022023866A1 publication Critical patent/JPWO2022023866A1/ja
Publication of JPWO2022023866A5 publication Critical patent/JPWO2022023866A5/ja
Priority to JP2025129917A priority Critical patent/JP2025159013A/ja
Application granted granted Critical
Publication of JP7724221B2 publication Critical patent/JP7724221B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Computer Hardware Design (AREA)
  • Neurology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computational Linguistics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • Artificial Intelligence (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP2022539784A 2020-07-31 2021-07-19 半導体装置 Active JP7724221B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025129917A JP2025159013A (ja) 2020-07-31 2025-08-04 半導体装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2020129876 2020-07-31
JP2020129876 2020-07-31
JP2021017030 2021-02-05
JP2021017030 2021-02-05
JP2021107848 2021-06-29
JP2021107848 2021-06-29
PCT/IB2021/056483 WO2022023866A1 (ja) 2020-07-31 2021-07-19 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025129917A Division JP2025159013A (ja) 2020-07-31 2025-08-04 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022023866A1 true JPWO2022023866A1 (https=) 2022-02-03
JPWO2022023866A5 JPWO2022023866A5 (https=) 2024-07-08
JP7724221B2 JP7724221B2 (ja) 2025-08-15

Family

ID=80036203

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022539784A Active JP7724221B2 (ja) 2020-07-31 2021-07-19 半導体装置
JP2025129917A Pending JP2025159013A (ja) 2020-07-31 2025-08-04 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025129917A Pending JP2025159013A (ja) 2020-07-31 2025-08-04 半導体装置

Country Status (5)

Country Link
US (1) US20230284429A1 (https=)
JP (2) JP7724221B2 (https=)
KR (1) KR20230043882A (https=)
CN (1) CN116157911A (https=)
WO (1) WO2022023866A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230047392A (ko) 2020-08-03 2023-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012252766A (ja) * 2010-09-02 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US20150003165A1 (en) * 2012-01-12 2015-01-01 Sharp Kabushiki Kaisha Semiconductor memory circuit and device
JP2018124977A (ja) * 2016-10-12 2018-08-09 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有するシステム
WO2018211378A1 (ja) * 2017-05-19 2018-11-22 株式会社半導体エネルギー研究所 半導体装置または記憶装置
WO2020079523A1 (ja) * 2018-10-19 2020-04-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9842842B2 (en) * 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
CN110637415B (zh) * 2017-05-31 2024-10-01 株式会社半导体能源研究所 比较电路、半导体装置、电子构件以及电子设备
JP6956784B2 (ja) * 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012252766A (ja) * 2010-09-02 2012-12-20 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US20150003165A1 (en) * 2012-01-12 2015-01-01 Sharp Kabushiki Kaisha Semiconductor memory circuit and device
JP2018124977A (ja) * 2016-10-12 2018-08-09 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有するシステム
WO2018211378A1 (ja) * 2017-05-19 2018-11-22 株式会社半導体エネルギー研究所 半導体装置または記憶装置
WO2020079523A1 (ja) * 2018-10-19 2020-04-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Also Published As

Publication number Publication date
WO2022023866A1 (ja) 2022-02-03
CN116157911A (zh) 2023-05-23
JP7724221B2 (ja) 2025-08-15
JP2025159013A (ja) 2025-10-17
US20230284429A1 (en) 2023-09-07
KR20230043882A (ko) 2023-03-31

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