JPWO2022016124A5 - - Google Patents
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- Publication number
- JPWO2022016124A5 JPWO2022016124A5 JP2023502905A JP2023502905A JPWO2022016124A5 JP WO2022016124 A5 JPWO2022016124 A5 JP WO2022016124A5 JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023502905 A JP2023502905 A JP 2023502905A JP WO2022016124 A5 JPWO2022016124 A5 JP WO2022016124A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- tantalum
- deposition
- based precursor
- organometallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705853P | 2020-07-17 | 2020-07-17 | |
| US62/705,853 | 2020-07-17 | ||
| PCT/US2021/042104 WO2022016124A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists containing tantalum |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023534961A JP2023534961A (ja) | 2023-08-15 |
| JPWO2022016124A5 true JPWO2022016124A5 (enExample) | 2024-07-19 |
| JP7774611B2 JP7774611B2 (ja) | 2025-11-21 |
Family
ID=79555033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502905A Active JP7774611B2 (ja) | 2020-07-17 | 2021-07-16 | 被膜を形成するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230288798A1 (enExample) |
| JP (1) | JP7774611B2 (enExample) |
| KR (1) | KR102846049B1 (enExample) |
| CN (1) | CN116134381A (enExample) |
| TW (1) | TW202217446A (enExample) |
| WO (1) | WO2022016124A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| US20230416606A1 (en) * | 2020-12-08 | 2023-12-28 | Lam Research Corporation | Photoresist development with organic vapor |
| KR20250020467A (ko) * | 2022-06-06 | 2025-02-11 | 인프리아 코포레이션 | 산화성 할로겐-공여 환경에서의 유기 금속 레지스트의 가스 기반 현상 |
| US20240141497A1 (en) * | 2022-10-26 | 2024-05-02 | Applied Materials, Inc. | Dielectric film surface restoration with reductive plasma |
| WO2024157943A1 (ja) * | 2023-01-27 | 2024-08-02 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
| US20240393684A1 (en) * | 2023-05-23 | 2024-11-28 | Samsung Sdi Co., Ltd. | Method of forming patterns |
| WO2024242120A1 (ja) * | 2023-05-24 | 2024-11-28 | 東京応化工業株式会社 | パターン形成方法及び金属化合物含有膜用処理液 |
| WO2024242121A1 (ja) * | 2023-05-24 | 2024-11-28 | 東京応化工業株式会社 | パターン形成方法及び金属化合物含有膜用処理液 |
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2310551B1 (en) * | 2008-08-01 | 2014-04-02 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming a tantalum-containing layer on a substrate |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| KR101909567B1 (ko) * | 2011-07-08 | 2018-10-18 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
| US8703386B2 (en) | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| US9324606B2 (en) * | 2014-01-09 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned repairing process for barrier layer |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| US9922839B2 (en) * | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| JP2018017780A (ja) * | 2016-07-25 | 2018-02-01 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| US10494715B2 (en) * | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| SG11202009703QA (en) | 2018-05-11 | 2020-10-29 | Lam Res Corp | Methods for making euv patternable hard masks |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
-
2021
- 2021-07-16 WO PCT/US2021/042104 patent/WO2022016124A1/en not_active Ceased
- 2021-07-16 KR KR1020237005181A patent/KR102846049B1/ko active Active
- 2021-07-16 JP JP2023502905A patent/JP7774611B2/ja active Active
- 2021-07-16 US US18/005,328 patent/US20230288798A1/en active Pending
- 2021-07-16 CN CN202180061016.1A patent/CN116134381A/zh active Pending
- 2021-07-19 TW TW110126442A patent/TW202217446A/zh unknown
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