JPWO2021246241A1 - - Google Patents

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Publication number
JPWO2021246241A1
JPWO2021246241A1 JP2022528760A JP2022528760A JPWO2021246241A1 JP WO2021246241 A1 JPWO2021246241 A1 JP WO2021246241A1 JP 2022528760 A JP2022528760 A JP 2022528760A JP 2022528760 A JP2022528760 A JP 2022528760A JP WO2021246241 A1 JPWO2021246241 A1 JP WO2021246241A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022528760A
Other versions
JP7313559B2 (ja
JPWO2021246241A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JPWO2021246241A1 publication Critical patent/JPWO2021246241A1/ja
Publication of JPWO2021246241A5 publication Critical patent/JPWO2021246241A5/ja
Application granted granted Critical
Publication of JP7313559B2 publication Critical patent/JP7313559B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022528760A 2020-06-03 2021-05-25 半導体素子および半導体素子の製造方法 Active JP7313559B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020096944 2020-06-03
JP2020096944 2020-06-03
PCT/JP2021/019809 WO2021246241A1 (ja) 2020-06-03 2021-05-25 半導体素子および半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021246241A1 true JPWO2021246241A1 (ja) 2021-12-09
JPWO2021246241A5 JPWO2021246241A5 (ja) 2022-08-10
JP7313559B2 JP7313559B2 (ja) 2023-07-24

Family

ID=78830997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022528760A Active JP7313559B2 (ja) 2020-06-03 2021-05-25 半導体素子および半導体素子の製造方法

Country Status (2)

Country Link
JP (1) JP7313559B2 (ja)
WO (1) WO2021246241A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114827A (ja) * 2004-10-18 2006-04-27 Denso Corp 半導体装置
JP2011219828A (ja) * 2010-04-12 2011-11-04 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2018150971A1 (ja) * 2017-02-15 2018-08-23 三菱電機株式会社 半導体素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1989604B (zh) * 2004-07-29 2011-03-30 京瓷株式会社 功能元件及其制造方法、以及功能元件装配结构体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114827A (ja) * 2004-10-18 2006-04-27 Denso Corp 半導体装置
JP2011219828A (ja) * 2010-04-12 2011-11-04 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2018150971A1 (ja) * 2017-02-15 2018-08-23 三菱電機株式会社 半導体素子及びその製造方法

Also Published As

Publication number Publication date
JP7313559B2 (ja) 2023-07-24
WO2021246241A1 (ja) 2021-12-09

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