JPWO2022045160A1 - - Google Patents

Info

Publication number
JPWO2022045160A1
JPWO2022045160A1 JP2022545650A JP2022545650A JPWO2022045160A1 JP WO2022045160 A1 JPWO2022045160 A1 JP WO2022045160A1 JP 2022545650 A JP2022545650 A JP 2022545650A JP 2022545650 A JP2022545650 A JP 2022545650A JP WO2022045160 A1 JPWO2022045160 A1 JP WO2022045160A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022545650A
Other versions
JP7369302B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022045160A1 publication Critical patent/JPWO2022045160A1/ja
Application granted granted Critical
Publication of JP7369302B2 publication Critical patent/JP7369302B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0495—Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2022545650A 2020-08-27 2021-08-25 ワイドギャップ半導体装置 Active JP7369302B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020143284 2020-08-27
JP2020143284 2020-08-27
PCT/JP2021/031066 WO2022045160A1 (ja) 2020-08-27 2021-08-25 ワイドギャップ半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022045160A1 true JPWO2022045160A1 (ja) 2022-03-03
JP7369302B2 JP7369302B2 (ja) 2023-10-25

Family

ID=80355261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022545650A Active JP7369302B2 (ja) 2020-08-27 2021-08-25 ワイドギャップ半導体装置

Country Status (6)

Country Link
US (1) US20230246111A1 (ja)
EP (1) EP4207308A1 (ja)
JP (1) JP7369302B2 (ja)
CN (1) CN115989584A (ja)
TW (1) TWI777752B (ja)
WO (1) WO2022045160A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117157769A (zh) * 2021-04-05 2023-12-01 罗姆股份有限公司 半导体装置及半导体装置的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3361062B2 (ja) * 1998-09-17 2003-01-07 株式会社東芝 半導体装置
JP4645641B2 (ja) * 2007-12-03 2011-03-09 富士電機システムズ株式会社 ＳｉＣショットキーダイオードの製造方法
JP5453867B2 (ja) * 2009-03-24 2014-03-26 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
JP5598015B2 (ja) * 2010-02-23 2014-10-01 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
TW201137975A (en) * 2010-04-19 2011-11-01 Sumitomo Electric Industries Silicon carbide semiconductor device and its manufacturing method
JP2014053393A (ja) * 2012-09-06 2014-03-20 Sumitomo Electric Ind Ltd ワイドギャップ半導体装置およびその製造方法
JP6244763B2 (ja) 2013-09-12 2017-12-13 住友電気工業株式会社 炭化珪素半導体装置
JP6242724B2 (ja) * 2014-03-20 2017-12-06 株式会社東芝 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN115989584A (zh) 2023-04-18
US20230246111A1 (en) 2023-08-03
JP7369302B2 (ja) 2023-10-25
WO2022045160A1 (ja) 2022-03-03
TW202213713A (zh) 2022-04-01
TWI777752B (zh) 2022-09-11
EP4207308A1 (en) 2023-07-05

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