JPWO2021209868A1 - - Google Patents

Info

Publication number
JPWO2021209868A1
JPWO2021209868A1 JP2022514872A JP2022514872A JPWO2021209868A1 JP WO2021209868 A1 JPWO2021209868 A1 JP WO2021209868A1 JP 2022514872 A JP2022514872 A JP 2022514872A JP 2022514872 A JP2022514872 A JP 2022514872A JP WO2021209868 A1 JPWO2021209868 A1 JP WO2021209868A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022514872A
Other languages
Japanese (ja)
Other versions
JP7607644B2 (ja
JPWO2021209868A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021209868A1 publication Critical patent/JPWO2021209868A1/ja
Publication of JPWO2021209868A5 publication Critical patent/JPWO2021209868A5/ja
Priority to JP2024220802A priority Critical patent/JP7770524B2/ja
Application granted granted Critical
Publication of JP7607644B2 publication Critical patent/JP7607644B2/ja
Priority to JP2025185815A priority patent/JP2026012407A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022514872A 2020-04-17 2021-04-09 撮像装置および電子機器 Active JP7607644B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024220802A JP7770524B2 (ja) 2020-04-17 2024-12-17 撮像装置
JP2025185815A JP2026012407A (ja) 2020-04-17 2025-11-04 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020073767 2020-04-17
JP2020073767 2020-04-17
PCT/IB2021/052939 WO2021209868A1 (ja) 2020-04-17 2021-04-09 撮像装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024220802A Division JP7770524B2 (ja) 2020-04-17 2024-12-17 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021209868A1 true JPWO2021209868A1 (https=) 2021-10-21
JPWO2021209868A5 JPWO2021209868A5 (https=) 2024-03-19
JP7607644B2 JP7607644B2 (ja) 2024-12-27

Family

ID=78083779

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022514872A Active JP7607644B2 (ja) 2020-04-17 2021-04-09 撮像装置および電子機器
JP2024220802A Active JP7770524B2 (ja) 2020-04-17 2024-12-17 撮像装置
JP2025185815A Pending JP2026012407A (ja) 2020-04-17 2025-11-04 撮像装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024220802A Active JP7770524B2 (ja) 2020-04-17 2024-12-17 撮像装置
JP2025185815A Pending JP2026012407A (ja) 2020-04-17 2025-11-04 撮像装置

Country Status (6)

Country Link
US (2) US12225314B2 (https=)
JP (3) JP7607644B2 (https=)
KR (1) KR20230007319A (https=)
CN (1) CN115428437A (https=)
DE (1) DE112021002375T5 (https=)
WO (1) WO2021209868A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022018561A1 (ja) 2020-07-24 2022-01-27 株式会社半導体エネルギー研究所 撮像装置および電子機器
CN116405795A (zh) * 2023-05-26 2023-07-07 四川科瑞达电子技术有限公司 一种改善空间分辨率的相机探测器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016123087A (ja) * 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
US20170142325A1 (en) * 2015-11-16 2017-05-18 Samsung Electronics Co., Ltd Image sensor and electronic device having the same
WO2018203169A1 (ja) * 2017-05-02 2018-11-08 株式会社半導体エネルギー研究所 撮像装置、及び電子機器
WO2018229594A1 (ja) * 2017-06-14 2018-12-20 株式会社半導体エネルギー研究所 撮像装置、及び電子機器

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0519105B1 (en) 1991-06-20 1995-08-02 Hewlett-Packard GmbH Photodiode array
JP4164161B2 (ja) * 1998-07-06 2008-10-08 キヤノン株式会社 画像信号処理方法、画像信号処理システム、撮像装置及び記憶媒体
US6665012B1 (en) 1998-09-22 2003-12-16 Pixim, Inc. Process-scalable high spatial resolution and low bit resolution CMOS area image sensor
US6919551B2 (en) 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
JP4532915B2 (ja) 2004-01-29 2010-08-25 キヤノン株式会社 パターン認識用学習方法、パターン認識用学習装置、画像入力装置、コンピュータプログラム、及びコンピュータ読み取り可能な記録媒体
JP4743007B2 (ja) 2006-06-16 2011-08-10 ソニー株式会社 画像処理装置および画像処理方法、記録媒体、並びに、プログラム
FR2918746B1 (fr) 2007-07-13 2009-10-09 Commissariat Energie Atomique Capteur electronique a regulation thermique integree
US8929601B2 (en) 2007-12-05 2015-01-06 John Caulfield Imaging detecting with automated sensing of an object or characteristic of that object
JP2009193429A (ja) 2008-02-15 2009-08-27 Mitsubishi Electric Corp 画像読取装置
JP5642344B2 (ja) 2008-11-21 2014-12-17 オリンパスイメージング株式会社 画像処理装置、画像処理方法、および、画像処理プログラム
JP5250474B2 (ja) 2009-04-28 2013-07-31 パナソニック株式会社 固体撮像装置
JP5526840B2 (ja) 2010-02-09 2014-06-18 ソニー株式会社 画像信号処理装置、撮像装置、画像信号処理方法、およびプログラム
KR101303868B1 (ko) 2011-10-13 2013-09-04 한국과학기술연구원 컬러 이미지 센서
US8629926B2 (en) * 2011-11-04 2014-01-14 Honeywell International, Inc. Imaging apparatus comprising image sensor array having shared global shutter circuitry
JP5812959B2 (ja) 2011-12-15 2015-11-17 キヤノン株式会社 撮像装置
JP5924923B2 (ja) 2011-12-15 2016-05-25 キヤノン株式会社 光電変換装置、及び光電変換装置の駆動方法
JP2013258675A (ja) 2012-05-16 2013-12-26 Canon Inc 画像処理装置、画像処理方法およびプログラム、並びに撮像装置
US9940533B2 (en) 2014-09-30 2018-04-10 Qualcomm Incorporated Scanning window for isolating pixel values in hardware for computer vision operations
US9685476B2 (en) * 2015-04-03 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
WO2017009944A1 (ja) 2015-07-14 2017-01-19 オリンパス株式会社 固体撮像装置
WO2017085708A1 (en) 2015-11-17 2017-05-26 Beamr Imaging Ltd. Method of controlling a quality measure and system thereof
US11475269B2 (en) 2015-12-15 2022-10-18 Analog Devices, Inc. Convolutional neural network
US9883121B2 (en) 2016-01-15 2018-01-30 Cognex Corporation Machine vision system for forming a one dimensional digital representation of a low information content scene
JP6540886B2 (ja) 2016-03-30 2019-07-10 株式会社ニコン 特徴抽出素子、特徴抽出システム、および判定装置
US10861217B2 (en) 2016-08-19 2020-12-08 Movidius Ltd. Dynamic culling of matrix operations
FR3064869B1 (fr) * 2017-03-28 2019-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images
CN114628425A (zh) 2017-05-26 2022-06-14 株式会社半导体能源研究所 摄像装置及电子设备
KR102823435B1 (ko) * 2018-10-11 2025-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016123087A (ja) * 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
US20170142325A1 (en) * 2015-11-16 2017-05-18 Samsung Electronics Co., Ltd Image sensor and electronic device having the same
WO2018203169A1 (ja) * 2017-05-02 2018-11-08 株式会社半導体エネルギー研究所 撮像装置、及び電子機器
WO2018229594A1 (ja) * 2017-06-14 2018-12-20 株式会社半導体エネルギー研究所 撮像装置、及び電子機器

Also Published As

Publication number Publication date
KR20230007319A (ko) 2023-01-12
JP7607644B2 (ja) 2024-12-27
WO2021209868A1 (ja) 2021-10-21
US12225314B2 (en) 2025-02-11
DE112021002375T5 (de) 2023-02-23
US20250159384A1 (en) 2025-05-15
JP2026012407A (ja) 2026-01-23
JP2025031750A (ja) 2025-03-07
JP7770524B2 (ja) 2025-11-14
CN115428437A (zh) 2022-12-02
US20230156376A1 (en) 2023-05-18

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
JPWO2021209868A1 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
JPWO2022018561A1 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240308

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240308

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241217

R150 Certificate of patent or registration of utility model

Ref document number: 7607644

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150