JPWO2021201216A1 - - Google Patents
Info
- Publication number
- JPWO2021201216A1 JPWO2021201216A1 JP2022512697A JP2022512697A JPWO2021201216A1 JP WO2021201216 A1 JPWO2021201216 A1 JP WO2021201216A1 JP 2022512697 A JP2022512697 A JP 2022512697A JP 2022512697 A JP2022512697 A JP 2022512697A JP WO2021201216 A1 JPWO2021201216 A1 JP WO2021201216A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023175463A JP2023179647A (ja) | 2020-04-01 | 2023-10-10 | 半導体装置および半導体装置の製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2020066324 | 2020-04-01 | ||
JP2020066324 | 2020-04-01 | ||
PCT/JP2021/014146 WO2021201216A1 (ja) | 2020-04-01 | 2021-04-01 | 半導体装置および半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023175463A Division JP2023179647A (ja) | 2020-04-01 | 2023-10-10 | 半導体装置および半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JPWO2021201216A1 true JPWO2021201216A1 (ja) | 2021-10-07 |
JPWO2021201216A5 JPWO2021201216A5 (ja) | 2022-06-09 |
JP7367856B2 JP7367856B2 (ja) | 2023-10-24 |
Family
ID=77929156
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2022512697A Active JP7367856B2 (ja) | 2020-04-01 | 2021-04-01 | 半導体装置および半導体装置の製造方法 |
JP2023175463A Pending JP2023179647A (ja) | 2020-04-01 | 2023-10-10 | 半導体装置および半導体装置の製造方法 |
Family Applications After (1)
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WO2007055352A1 (ja) * | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
JP2013138172A (ja) * | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2017047285A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017047276A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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WO2007055352A1 (ja) * | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
JP2013138172A (ja) * | 2011-11-30 | 2013-07-11 | Denso Corp | 半導体装置 |
WO2017047285A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017047276A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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