JPWO2021186846A1 - - Google Patents

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Publication number
JPWO2021186846A1
JPWO2021186846A1 JP2022508074A JP2022508074A JPWO2021186846A1 JP WO2021186846 A1 JPWO2021186846 A1 JP WO2021186846A1 JP 2022508074 A JP2022508074 A JP 2022508074A JP 2022508074 A JP2022508074 A JP 2022508074A JP WO2021186846 A1 JPWO2021186846 A1 JP WO2021186846A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022508074A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2021186846A1 publication Critical patent/JPWO2021186846A1/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/02—Boron compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/02—Boron compounds
    • C07F5/027—Organoboranes and organoborohydrides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/52—Halophosphines
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/535—Organo-phosphoranes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/02—Ortho- or ortho- and peri-condensed systems
    • C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
    • C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
    • C07C2603/24—Anthracenes; Hydrogenated anthracenes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Materials For Photolithography (AREA)
JP2022508074A 2020-03-17 2021-01-04 Pending JPWO2021186846A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020046335 2020-03-17
PCT/JP2021/000009 WO2021186846A1 (ja) 2020-03-17 2021-01-04 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物

Publications (1)

Publication Number Publication Date
JPWO2021186846A1 true JPWO2021186846A1 (ja) 2021-09-23

Family

ID=77770775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508074A Pending JPWO2021186846A1 (ja) 2020-03-17 2021-01-04

Country Status (6)

Country Link
US (1) US20230100642A1 (ja)
EP (1) EP4122915A4 (ja)
JP (1) JPWO2021186846A1 (ja)
KR (1) KR20220154085A (ja)
CN (1) CN114901638A (ja)
WO (1) WO2021186846A1 (ja)

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1516512A (en) 1974-05-02 1978-07-05 Gen Electric Chalcogenium salts
JP2742594B2 (ja) 1988-12-29 1998-04-22 広栄化学工業株式会社 光重合触媒およびそれを含有する硬化性組成物
JPH07329399A (ja) 1994-06-03 1995-12-19 Ricoh Co Ltd 画像形成装置
JP3942202B2 (ja) 1994-12-15 2007-07-11 日本化薬株式会社 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
JPH09118663A (ja) 1995-08-22 1997-05-06 Nippon Soda Co Ltd 新規スルホニウム塩化合物、重合開始剤、該化合物を含有する硬化性組成物および硬化方法
JPH09183960A (ja) 1995-12-28 1997-07-15 Toyo Ink Mfg Co Ltd 感エネルギー線酸発生剤、感エネルギー線酸発生剤組成物および硬化性組成物
JPH09302269A (ja) 1996-03-11 1997-11-25 Toyo Ink Mfg Co Ltd 紫外線硬化型樹脂組成物及びこれを含む被覆剤
JPH107680A (ja) 1996-06-18 1998-01-13 Nippon Kayaku Co Ltd 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
JPH10212286A (ja) 1997-01-30 1998-08-11 Nippon Kayaku Co Ltd 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
JPH10287643A (ja) 1997-04-10 1998-10-27 Nippon Kayaku Co Ltd 新規オニウム塩、光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
JPH1160996A (ja) 1997-08-25 1999-03-05 Toyo Ink Mfg Co Ltd 紫外線硬化型樹脂組成物及びその利用
JPH11279212A (ja) 1998-02-02 1999-10-12 Nippon Soda Co Ltd 新規ヨードニウム塩化合物を含有する光硬化性組成物
JP4023086B2 (ja) 1999-12-27 2007-12-19 和光純薬工業株式会社 スルホニウム塩化合物
JP2001348482A (ja) 2000-06-07 2001-12-18 Shin Etsu Chem Co Ltd 放射線硬化型シリコーン含有剥離性組成物及び剥離フィルム
JP3712960B2 (ja) 2001-07-12 2005-11-02 関西ペイント株式会社 紫外線硬化型塗料組成物
JP4002176B2 (ja) 2001-12-27 2007-10-31 信越化学工業株式会社 光酸発生化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
JP2003267968A (ja) 2002-03-13 2003-09-25 Hodogaya Chem Co Ltd スルホン酸オニウム塩化合物、該化合物の製造方法、該化合物を用いた感光性樹脂組成物およびこれを用いた感光性材料。
ATE473209T1 (de) * 2005-07-01 2010-07-15 Basf Se Sulfoniumsalzinitiatoren
WO2007118794A1 (en) 2006-04-13 2007-10-25 Ciba Holding Inc. Sulphonium salt initiators
JP2008120700A (ja) * 2006-11-08 2008-05-29 San Apro Kk スルホニウム塩
JP5576139B2 (ja) 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
WO2011016425A1 (ja) * 2009-08-03 2011-02-10 サンアプロ株式会社 光酸発生剤，光硬化性組成物，及びその硬化体
JP5517811B2 (ja) * 2010-07-26 2014-06-11 サンアプロ株式会社 化学増幅型ネガ型フォトレジスト組成物
KR101959107B1 (ko) * 2012-10-18 2019-03-15 산아프로 가부시키가이샤 술포늄염, 광산 발생제, 경화성 조성물 및 레지스트 조성물
JP6924754B2 (ja) * 2016-06-29 2021-08-25 サンアプロ株式会社 スルホニウム塩、光酸発生剤、光硬化性組成物、及びその硬化体
JP2018024598A (ja) 2016-08-09 2018-02-15 東洋合成工業株式会社 スルホニウム塩、光酸発生剤、それを含む組成物、及び、デバイスの製造方法
CN111788181B (zh) * 2018-05-25 2023-01-17 三亚普罗股份有限公司 锍盐、光酸产生剂、固化性组合物和抗蚀剂组合物
KR20210113185A (ko) * 2019-01-10 2021-09-15 산아프로 가부시키가이샤 술포늄염, 광산 발생제, 경화성 조성물 및 레지스트 조성물

Also Published As

Publication number Publication date
KR20220154085A (ko) 2022-11-21
CN114901638A (zh) 2022-08-12
EP4122915A4 (en) 2023-09-06
EP4122915A1 (en) 2023-01-25
WO2021186846A1 (ja) 2021-09-23
US20230100642A1 (en) 2023-03-30

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