JPWO2021171545A1 - - Google Patents

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Publication number
JPWO2021171545A1
JPWO2021171545A1 JP2022502767A JP2022502767A JPWO2021171545A1 JP WO2021171545 A1 JPWO2021171545 A1 JP WO2021171545A1 JP 2022502767 A JP2022502767 A JP 2022502767A JP 2022502767 A JP2022502767 A JP 2022502767A JP WO2021171545 A1 JPWO2021171545 A1 JP WO2021171545A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022502767A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021171545A1 publication Critical patent/JPWO2021171545A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP2022502767A 2020-02-28 2020-02-28 Pending JPWO2021171545A1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/008260 WO2021171545A1 (ja) 2020-02-28 2020-02-28 半導体レーザ装置

Publications (1)

Publication Number Publication Date
JPWO2021171545A1 true JPWO2021171545A1 (ja) 2021-09-02

Family

ID=77491258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502767A Pending JPWO2021171545A1 (ja) 2020-02-28 2020-02-28

Country Status (5)

Country Link
US (1) US20230011072A1 (ja)
JP (1) JPWO2021171545A1 (ja)
CN (1) CN115152107A (ja)
TW (1) TW202133518A (ja)
WO (1) WO2021171545A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020092128A (ja) * 2018-12-03 2020-06-11 古河電気工業株式会社 半導体レーザチップ実装サブマウントおよびその製造方法ならびに半導体レーザモジュール

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54135170U (ja) * 1978-03-10 1979-09-19
JPS59154089A (ja) * 1983-02-22 1984-09-03 Sony Corp 半導体レ−ザ−
JPH0290585A (ja) * 1988-09-27 1990-03-30 Nec Corp レーザ装置
JPH07191237A (ja) * 1993-12-27 1995-07-28 Rohm Co Ltd 光通信用受発信モジュール
JPH0923036A (ja) * 1995-07-05 1997-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
WO1997024787A1 (fr) * 1995-12-28 1997-07-10 Matsushita Electric Industrial Co., Ltd. Laser a semi-conducteur et procede de fabrication correspondant
JPH11186659A (ja) * 1997-12-22 1999-07-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000312053A (ja) * 1999-02-23 2000-11-07 Mitsubishi Chemicals Corp 半導体光デバイス装置
US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
JP2002162528A (ja) * 2000-09-13 2002-06-07 Nippon Telegr & Teleph Corp <Ntt> 平面型光回路及び光回路
US20020141682A1 (en) * 2001-04-02 2002-10-03 Sang-Wan Ryu Spot-size converter integratrd laser diode and method for fabricating the same
JP2005260223A (ja) * 2004-03-08 2005-09-22 Sumitomo Electric Ind Ltd 光送信サブアセンブリ
JP2011171606A (ja) * 2010-02-19 2011-09-01 Furukawa Electric Co Ltd:The 半導体レーザおよび半導体レーザモジュール
JP2011192909A (ja) * 2010-03-16 2011-09-29 Renesas Electronics Corp 半導体レーザ、及びレーザパッケージ
KR20140090031A (ko) * 2013-01-08 2014-07-16 조호성 To 캔 패키지 반사형 레이저 다이오드 모듈
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
WO2019116547A1 (ja) * 2017-12-15 2019-06-20 三菱電機株式会社 半導体レーザ装置および半導体レーザ装置の製造方法

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54135170U (ja) * 1978-03-10 1979-09-19
JPS59154089A (ja) * 1983-02-22 1984-09-03 Sony Corp 半導体レ−ザ−
JPH0290585A (ja) * 1988-09-27 1990-03-30 Nec Corp レーザ装置
JPH07191237A (ja) * 1993-12-27 1995-07-28 Rohm Co Ltd 光通信用受発信モジュール
JPH0923036A (ja) * 1995-07-05 1997-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
WO1997024787A1 (fr) * 1995-12-28 1997-07-10 Matsushita Electric Industrial Co., Ltd. Laser a semi-conducteur et procede de fabrication correspondant
JPH11186659A (ja) * 1997-12-22 1999-07-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
JP2000312053A (ja) * 1999-02-23 2000-11-07 Mitsubishi Chemicals Corp 半導体光デバイス装置
JP2002162528A (ja) * 2000-09-13 2002-06-07 Nippon Telegr & Teleph Corp <Ntt> 平面型光回路及び光回路
US20020141682A1 (en) * 2001-04-02 2002-10-03 Sang-Wan Ryu Spot-size converter integratrd laser diode and method for fabricating the same
JP2005260223A (ja) * 2004-03-08 2005-09-22 Sumitomo Electric Ind Ltd 光送信サブアセンブリ
JP2011171606A (ja) * 2010-02-19 2011-09-01 Furukawa Electric Co Ltd:The 半導体レーザおよび半導体レーザモジュール
JP2011192909A (ja) * 2010-03-16 2011-09-29 Renesas Electronics Corp 半導体レーザ、及びレーザパッケージ
KR20140090031A (ko) * 2013-01-08 2014-07-16 조호성 To 캔 패키지 반사형 레이저 다이오드 모듈
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
WO2019116547A1 (ja) * 2017-12-15 2019-06-20 三菱電機株式会社 半導体レーザ装置および半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
US20230011072A1 (en) 2023-01-12
TW202133518A (zh) 2021-09-01
CN115152107A (zh) 2022-10-04
WO2021171545A1 (ja) 2021-09-02

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