JPWO2021161791A1 - - Google Patents
Info
- Publication number
- JPWO2021161791A1 JPWO2021161791A1 JP2022500311A JP2022500311A JPWO2021161791A1 JP WO2021161791 A1 JPWO2021161791 A1 JP WO2021161791A1 JP 2022500311 A JP2022500311 A JP 2022500311A JP 2022500311 A JP2022500311 A JP 2022500311A JP WO2021161791 A1 JPWO2021161791 A1 JP WO2021161791A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/707—Pixels for event detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020022430 | 2020-02-13 | ||
| PCT/JP2021/002964 WO2021161791A1 (ja) | 2020-02-13 | 2021-01-28 | 固体撮像装置および撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021161791A1 true JPWO2021161791A1 (https=) | 2021-08-19 |
Family
ID=77291546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022500311A Pending JPWO2021161791A1 (https=) | 2020-02-13 | 2021-01-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12126924B2 (https=) |
| EP (1) | EP4106322A4 (https=) |
| JP (1) | JPWO2021161791A1 (https=) |
| KR (1) | KR20220140493A (https=) |
| CN (1) | CN115023947B (https=) |
| WO (1) | WO2021161791A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022009807A1 (ja) * | 2020-07-10 | 2022-01-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像方法 |
| WO2024135768A1 (ja) * | 2022-12-23 | 2024-06-27 | 株式会社ジャパンディスプレイ | 検出装置 |
| TW202505912A (zh) * | 2023-07-17 | 2025-02-01 | 大陸商廣州印芯半導體技術有限公司 | 動態視覺感測器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009182992A (ja) * | 2002-04-04 | 2009-08-13 | Sony Corp | 固体撮像装置の駆動方法 |
| JP2013017095A (ja) * | 2011-07-05 | 2013-01-24 | Panasonic Corp | 光半導体装置、及びそれを用いた電子機器 |
| WO2019087471A1 (ja) * | 2017-10-30 | 2019-05-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| JP2019125784A (ja) * | 2018-01-12 | 2019-07-25 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | イメージセンサ |
| JP2019195135A (ja) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3675984B2 (ja) * | 1996-09-12 | 2005-07-27 | 株式会社ルネサステクノロジ | 受光素子回路及び受光素子回路アレイ |
| JP5471174B2 (ja) * | 2009-08-28 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP2011199050A (ja) * | 2010-03-19 | 2011-10-06 | Sony Corp | 固体撮像デバイスおよび電子機器 |
| JP2012151692A (ja) * | 2011-01-19 | 2012-08-09 | Panasonic Corp | 固体撮像装置及びこれを備えた撮像システム |
| JP5903772B2 (ja) * | 2011-04-11 | 2016-04-13 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
| FR2997225B1 (fr) * | 2012-10-18 | 2016-01-01 | E2V Semiconductors | Capteur d'image a efficacite quantique amelioree dans les grandes longueurs d'onde |
| CA2923701A1 (en) | 2013-09-16 | 2015-03-19 | Chronocam | Dynamic, single photodiode pixel circuit and operating method thereof |
| KR102136055B1 (ko) * | 2014-01-08 | 2020-07-21 | 삼성전자 주식회사 | 오픈-루프 증폭기를 포함하는 비전 센서 칩, 이의 동작 방법, 및 이를 포함하는 데이터 처리 시스템 |
| JP6094511B2 (ja) * | 2014-02-25 | 2017-03-15 | ソニー株式会社 | 撮像素子および撮像装置 |
| JP2015216186A (ja) * | 2014-05-09 | 2015-12-03 | ソニー株式会社 | 固体撮像装置および電子機器 |
| JP6440844B2 (ja) | 2015-07-14 | 2018-12-19 | オリンパス株式会社 | 固体撮像装置 |
| WO2018180010A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| KR102421726B1 (ko) * | 2017-09-25 | 2022-07-15 | 삼성전자주식회사 | 이미지 센서 |
| JP7327916B2 (ja) * | 2018-09-11 | 2023-08-16 | キヤノン株式会社 | 光電変換装置および機器 |
| GB2592520B (en) * | 2018-10-05 | 2022-10-12 | Teledyne Flir Commercial Systems Inc | Dual band photodetection system and method |
| CN114270808B (zh) * | 2019-07-26 | 2024-11-29 | 苹果公司 | 具有共享光电检测器的光强度和对比度变化检测能力的像素读出电路 |
-
2021
- 2021-01-28 JP JP2022500311A patent/JPWO2021161791A1/ja active Pending
- 2021-01-28 KR KR1020227025594A patent/KR20220140493A/ko not_active Abandoned
- 2021-01-28 WO PCT/JP2021/002964 patent/WO2021161791A1/ja not_active Ceased
- 2021-01-28 US US17/797,817 patent/US12126924B2/en active Active
- 2021-01-28 CN CN202180011616.7A patent/CN115023947B/zh active Active
- 2021-01-28 EP EP21753075.7A patent/EP4106322A4/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009182992A (ja) * | 2002-04-04 | 2009-08-13 | Sony Corp | 固体撮像装置の駆動方法 |
| JP2013017095A (ja) * | 2011-07-05 | 2013-01-24 | Panasonic Corp | 光半導体装置、及びそれを用いた電子機器 |
| WO2019087471A1 (ja) * | 2017-10-30 | 2019-05-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| JP2019125784A (ja) * | 2018-01-12 | 2019-07-25 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | イメージセンサ |
| JP2019195135A (ja) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115023947B (zh) | 2025-12-19 |
| KR20220140493A (ko) | 2022-10-18 |
| WO2021161791A1 (ja) | 2021-08-19 |
| EP4106322A4 (en) | 2023-08-02 |
| US12126924B2 (en) | 2024-10-22 |
| US20230059890A1 (en) | 2023-02-23 |
| EP4106322A1 (en) | 2022-12-21 |
| CN115023947A (zh) | 2022-09-06 |
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