JPWO2021130585A1 - - Google Patents
Info
- Publication number
- JPWO2021130585A1 JPWO2021130585A1 JP2021566370A JP2021566370A JPWO2021130585A1 JP WO2021130585 A1 JPWO2021130585 A1 JP WO2021130585A1 JP 2021566370 A JP2021566370 A JP 2021566370A JP 2021566370 A JP2021566370 A JP 2021566370A JP WO2021130585 A1 JPWO2021130585 A1 JP WO2021130585A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2230/00—Details of flat display driving waveforms
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0469—Details of the physics of pixel operation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025084787A JP7854089B2 (ja) | 2019-12-25 | 2025-05-21 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019235131 | 2019-12-25 | ||
| JP2020067214 | 2020-04-03 | ||
| PCT/IB2020/061798 WO2021130585A1 (ja) | 2019-12-25 | 2020-12-11 | 表示装置、および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025084787A Division JP7854089B2 (ja) | 2019-12-25 | 2025-05-21 | 表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021130585A1 true JPWO2021130585A1 (https=) | 2021-07-01 |
| JPWO2021130585A5 JPWO2021130585A5 (https=) | 2023-12-18 |
Family
ID=76575265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021566370A Withdrawn JPWO2021130585A1 (https=) | 2019-12-25 | 2020-12-11 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US12426467B2 (https=) |
| JP (1) | JPWO2021130585A1 (https=) |
| WO (1) | WO2021130585A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| KR102869225B1 (ko) * | 2018-05-18 | 2025-10-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 구동 방법 |
| CN114937436A (zh) * | 2022-06-30 | 2022-08-23 | 天马微电子股份有限公司 | 一种显示面板及显示装置 |
| JP2024169345A (ja) * | 2023-05-23 | 2024-12-05 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015025978A (ja) * | 2013-07-26 | 2015-02-05 | 株式会社ジャパンディスプレイ | 駆動回路、表示装置、及び駆動方法 |
| US20150161940A1 (en) * | 2013-12-11 | 2015-06-11 | Lg Display Co., Ltd. | Pixel circuit of display device, organic light emitting display device and method for driving the same |
| JP2018010203A (ja) * | 2016-07-14 | 2018-01-18 | 株式会社半導体エネルギー研究所 | 表示装置およびその駆動方法、表示モジュールならびに電子機器 |
| JP2018045164A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社半導体エネルギー研究所 | 表示システム、電子機器 |
| WO2019111137A1 (ja) * | 2017-12-06 | 2019-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、電子機器、及び動作方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000242344A (ja) * | 1999-02-25 | 2000-09-08 | Oki Micro Design Co Ltd | 電圧変動補正回路 |
| JP2001042822A (ja) | 1999-08-03 | 2001-02-16 | Pioneer Electronic Corp | アクティブマトリクス型表示装置 |
| KR100940342B1 (ko) | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
| JP4485119B2 (ja) * | 2001-11-13 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2005099715A (ja) * | 2003-08-29 | 2005-04-14 | Seiko Epson Corp | 電子回路の駆動方法、電子回路、電子装置、電気光学装置、電子機器および電子装置の駆動方法 |
| JP5025242B2 (ja) | 2005-12-02 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、モジュール、及び電子機器 |
| EP1793366A3 (en) | 2005-12-02 | 2009-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
| JP2009015276A (ja) | 2007-06-05 | 2009-01-22 | Sony Corp | El表示パネル駆動方法、el表示パネル、el表示パネル駆動装置及び電子機器 |
| US8358299B2 (en) | 2008-12-09 | 2013-01-22 | Ignis Innovation Inc. | Low power circuit and driving method for emissive displays |
| JP2010185928A (ja) * | 2009-02-10 | 2010-08-26 | Sony Corp | 表示装置の製造方法および表示装置 |
| JP2010266492A (ja) | 2009-05-12 | 2010-11-25 | Sony Corp | 画素回路、表示装置、画素回路の駆動方法 |
| JP5552000B2 (ja) | 2010-08-16 | 2014-07-16 | 富士フイルム株式会社 | ファインダー装置および撮像装置 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101341797B1 (ko) | 2012-08-01 | 2013-12-16 | 엘지디스플레이 주식회사 | 유기 발광 다이오드 표시장치 및 그 구동 방법 |
| JP6031954B2 (ja) | 2012-11-14 | 2016-11-24 | ソニー株式会社 | 発光素子、表示装置及び電子機器 |
| JP6495602B2 (ja) | 2013-09-13 | 2019-04-03 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US9349751B2 (en) * | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20160145643A (ko) | 2014-04-23 | 2016-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 입출력 장치 및 입출력 장치의 구동 방법 |
| KR102230928B1 (ko) | 2014-10-13 | 2021-03-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 구동 방법 |
| US10586495B2 (en) | 2016-07-22 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR102520832B1 (ko) | 2017-12-18 | 2023-04-12 | 엘지디스플레이 주식회사 | 마이크로 디스플레이 장치 및 디스플레이 집적회로 |
| WO2019123089A1 (ja) | 2017-12-22 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 表示装置、半導体装置、及び電子機器 |
-
2020
- 2020-12-11 WO PCT/IB2020/061798 patent/WO2021130585A1/ja not_active Ceased
- 2020-12-11 JP JP2021566370A patent/JPWO2021130585A1/ja not_active Withdrawn
- 2020-12-11 US US17/787,654 patent/US12426467B2/en active Active
-
2025
- 2025-09-09 US US19/323,897 patent/US20260013356A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015025978A (ja) * | 2013-07-26 | 2015-02-05 | 株式会社ジャパンディスプレイ | 駆動回路、表示装置、及び駆動方法 |
| US20150161940A1 (en) * | 2013-12-11 | 2015-06-11 | Lg Display Co., Ltd. | Pixel circuit of display device, organic light emitting display device and method for driving the same |
| JP2018010203A (ja) * | 2016-07-14 | 2018-01-18 | 株式会社半導体エネルギー研究所 | 表示装置およびその駆動方法、表示モジュールならびに電子機器 |
| JP2018045164A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社半導体エネルギー研究所 | 表示システム、電子機器 |
| WO2019111137A1 (ja) * | 2017-12-06 | 2019-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、電子機器、及び動作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220416008A1 (en) | 2022-12-29 |
| WO2021130585A1 (ja) | 2021-07-01 |
| US20260013356A1 (en) | 2026-01-08 |
| JP2025122098A (ja) | 2025-08-20 |
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