JPWO2021079779A1 - - Google Patents
Info
- Publication number
- JPWO2021079779A1 JPWO2021079779A1 JP2021554292A JP2021554292A JPWO2021079779A1 JP WO2021079779 A1 JPWO2021079779 A1 JP WO2021079779A1 JP 2021554292 A JP2021554292 A JP 2021554292A JP 2021554292 A JP2021554292 A JP 2021554292A JP WO2021079779 A1 JPWO2021079779 A1 JP WO2021079779A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019193049 | 2019-10-23 | ||
JP2019193049 | 2019-10-23 | ||
PCT/JP2020/038507 WO2021079779A1 (ja) | 2019-10-23 | 2020-10-12 | 基板洗浄方法、および基板洗浄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021079779A1 true JPWO2021079779A1 (ja) | 2021-04-29 |
JP7258176B2 JP7258176B2 (ja) | 2023-04-14 |
Family
ID=75619807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021554292A Active JP7258176B2 (ja) | 2019-10-23 | 2020-10-12 | 基板洗浄方法、および基板洗浄装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220367214A1 (ja) |
JP (1) | JP7258176B2 (ja) |
KR (1) | KR20220086606A (ja) |
CN (1) | CN114556525A (ja) |
TW (1) | TW202123315A (ja) |
WO (1) | WO2021079779A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006257496A (ja) * | 2005-03-17 | 2006-09-28 | Mitsubishi Heavy Ind Ltd | 薄膜作製方法並びに薄膜作製装置及び水蒸気供給装置 |
JP2007201374A (ja) * | 2006-01-30 | 2007-08-09 | Shibaura Mechatronics Corp | 基板の洗浄処理装置及び洗浄処理方法 |
JP2008043909A (ja) * | 2006-08-21 | 2008-02-28 | Air Water Inc | ドライアイススノー洗浄装置および方法 |
JP2011168881A (ja) * | 2010-01-25 | 2011-09-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2013175681A (ja) * | 2012-02-27 | 2013-09-05 | Kyoto Univ | 基板洗浄方法、基板洗浄装置及び真空処理装置 |
JP2015026745A (ja) * | 2013-07-26 | 2015-02-05 | 東京エレクトロン株式会社 | 基板洗浄方法及び基板洗浄装置 |
WO2017094389A1 (ja) * | 2015-11-30 | 2017-06-08 | 東京エレクトロン株式会社 | 基板洗浄方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833319A (en) * | 1987-02-27 | 1989-05-23 | Hughes Aircraft Company | Carrier gas cluster source for thermally conditioned clusters |
US6534608B2 (en) * | 2000-12-07 | 2003-03-18 | Univation Technologies, Llc | Support materials for use with polymerization catalysts |
JP2007165661A (ja) * | 2005-12-14 | 2007-06-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
US8056832B2 (en) * | 2008-10-30 | 2011-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Jetspray nozzle and method for cleaning photo masks and semiconductor wafers |
US8097860B2 (en) * | 2009-02-04 | 2012-01-17 | Tel Epion Inc. | Multiple nozzle gas cluster ion beam processing system and method of operating |
JP5785818B2 (ja) | 2011-08-26 | 2015-09-30 | 岩谷産業株式会社 | クラスタによる加工方法 |
JP6311236B2 (ja) * | 2013-08-20 | 2018-04-18 | 東京エレクトロン株式会社 | 基板洗浄装置 |
US10014191B2 (en) * | 2014-10-06 | 2018-07-03 | Tel Fsi, Inc. | Systems and methods for treating substrates with cryogenic fluid mixtures |
KR102468564B1 (ko) * | 2014-10-06 | 2022-11-17 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 극저온 유체 혼합물로 기판을 처리하는 시스템 및 방법 |
JP6596340B2 (ja) * | 2016-01-21 | 2019-10-23 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
-
2020
- 2020-10-12 TW TW109135112A patent/TW202123315A/zh unknown
- 2020-10-12 WO PCT/JP2020/038507 patent/WO2021079779A1/ja active Application Filing
- 2020-10-12 KR KR1020227015845A patent/KR20220086606A/ko unknown
- 2020-10-12 US US17/771,144 patent/US20220367214A1/en active Pending
- 2020-10-12 CN CN202080071208.6A patent/CN114556525A/zh active Pending
- 2020-10-12 JP JP2021554292A patent/JP7258176B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006257496A (ja) * | 2005-03-17 | 2006-09-28 | Mitsubishi Heavy Ind Ltd | 薄膜作製方法並びに薄膜作製装置及び水蒸気供給装置 |
JP2007201374A (ja) * | 2006-01-30 | 2007-08-09 | Shibaura Mechatronics Corp | 基板の洗浄処理装置及び洗浄処理方法 |
JP2008043909A (ja) * | 2006-08-21 | 2008-02-28 | Air Water Inc | ドライアイススノー洗浄装置および方法 |
JP2011168881A (ja) * | 2010-01-25 | 2011-09-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2013175681A (ja) * | 2012-02-27 | 2013-09-05 | Kyoto Univ | 基板洗浄方法、基板洗浄装置及び真空処理装置 |
JP2015026745A (ja) * | 2013-07-26 | 2015-02-05 | 東京エレクトロン株式会社 | 基板洗浄方法及び基板洗浄装置 |
WO2017094389A1 (ja) * | 2015-11-30 | 2017-06-08 | 東京エレクトロン株式会社 | 基板洗浄方法 |
Also Published As
Publication number | Publication date |
---|---|
CN114556525A (zh) | 2022-05-27 |
TW202123315A (zh) | 2021-06-16 |
WO2021079779A1 (ja) | 2021-04-29 |
KR20220086606A (ko) | 2022-06-23 |
US20220367214A1 (en) | 2022-11-17 |
JP7258176B2 (ja) | 2023-04-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220415 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230307 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230404 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7258176 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |