JPWO2021075130A1 - - Google Patents

Info

Publication number
JPWO2021075130A1
JPWO2021075130A1 JP2021552113A JP2021552113A JPWO2021075130A1 JP WO2021075130 A1 JPWO2021075130 A1 JP WO2021075130A1 JP 2021552113 A JP2021552113 A JP 2021552113A JP 2021552113 A JP2021552113 A JP 2021552113A JP WO2021075130 A1 JPWO2021075130 A1 JP WO2021075130A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021552113A
Other versions
JPWO2021075130A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021075130A1 publication Critical patent/JPWO2021075130A1/ja
Publication of JPWO2021075130A5 publication Critical patent/JPWO2021075130A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2022—Light-sensitive devices characterized by he counter electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
JP2021552113A 2019-10-18 2020-08-07 Pending JPWO2021075130A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019190903 2019-10-18
PCT/JP2020/030488 WO2021075130A1 (ja) 2019-10-18 2020-08-07 素子

Publications (2)

Publication Number Publication Date
JPWO2021075130A1 true JPWO2021075130A1 (ja) 2021-04-22
JPWO2021075130A5 JPWO2021075130A5 (ja) 2022-07-27

Family

ID=75537788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021552113A Pending JPWO2021075130A1 (ja) 2019-10-18 2020-08-07

Country Status (5)

Country Link
US (1) US20210367175A1 (ja)
EP (1) EP3836239A4 (ja)
JP (1) JPWO2021075130A1 (ja)
CN (1) CN113016091A (ja)
WO (1) WO2021075130A1 (ja)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4876452B2 (ja) * 2005-06-27 2012-02-15 パナソニック電工株式会社 照明装置
JP5356278B2 (ja) * 2010-02-23 2013-12-04 パナソニック株式会社 表示装置
CN102947947B (zh) * 2010-06-21 2015-11-25 三菱电机株式会社 光电变换装置
KR20120031693A (ko) * 2010-09-27 2012-04-04 엘지전자 주식회사 태양 전지 및 그 제조 방법
US20130247957A1 (en) * 2010-12-06 2013-09-26 Shin-Etsu Chemical Co., Ltd. Solar cell and solar-cell module
CN103460402B (zh) * 2011-04-04 2016-08-17 三菱电机株式会社 太阳能电池及其制造方法、太阳能电池模块
JP5683763B1 (ja) 2013-09-09 2015-03-11 保土谷化学工業株式会社 ベンゾピリドインドール誘導体および有機エレクトロルミネッセンス素子
JP2017123352A (ja) 2014-03-31 2017-07-13 出光興産株式会社 有機エレクトロルミネッセンス素子および電子機器
CN105374938B (zh) * 2014-08-12 2018-01-19 中国科学院苏州纳米技术与纳米仿生研究所 一种场效应有机太阳能电池及其制备方法
JP2016149500A (ja) * 2015-02-13 2016-08-18 国立大学法人京都工芸繊維大学 有機太陽電池及びその製造方法
JP2018098233A (ja) * 2016-12-08 2018-06-21 京セラ株式会社 配線基板およびこれを用いた電子装置
JP6862810B2 (ja) * 2016-12-07 2021-04-21 株式会社リコー 光電変換素子及び太陽電池モジュール
JP6876480B2 (ja) 2017-03-24 2021-05-26 積水化学工業株式会社 太陽電池
WO2019006507A1 (en) * 2017-07-04 2019-01-10 Newsouth Innovations Pty Limited THIN FILM PHOTOVOLTAIC DEVICE AND ITS ENCAPSULATION METHOD

Also Published As

Publication number Publication date
US20210367175A1 (en) 2021-11-25
CN113016091A (zh) 2021-06-22
EP3836239A4 (en) 2022-06-29
EP3836239A1 (en) 2021-06-16
WO2021075130A1 (ja) 2021-04-22

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