JPWO2021069998A1 - - Google Patents
Info
- Publication number
- JPWO2021069998A1 JPWO2021069998A1 JP2021550719A JP2021550719A JPWO2021069998A1 JP WO2021069998 A1 JPWO2021069998 A1 JP WO2021069998A1 JP 2021550719 A JP2021550719 A JP 2021550719A JP 2021550719 A JP2021550719 A JP 2021550719A JP WO2021069998 A1 JPWO2021069998 A1 JP WO2021069998A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024100616A JP7711271B2 (ja) | 2019-10-11 | 2024-06-21 | 記憶装置 |
| JP2025116148A JP2025137576A (ja) | 2019-10-11 | 2025-07-09 | 記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019187386 | 2019-10-11 | ||
| JP2019187386 | 2019-10-11 | ||
| PCT/IB2020/058976 WO2021069998A1 (ja) | 2019-10-11 | 2020-09-25 | 記憶装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024100616A Division JP7711271B2 (ja) | 2019-10-11 | 2024-06-21 | 記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021069998A1 true JPWO2021069998A1 (https=) | 2021-04-15 |
| JPWO2021069998A5 JPWO2021069998A5 (https=) | 2023-07-26 |
| JP7510431B2 JP7510431B2 (ja) | 2024-07-03 |
Family
ID=75438027
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021550719A Active JP7510431B2 (ja) | 2019-10-11 | 2020-09-25 | 記憶装置 |
| JP2024100616A Active JP7711271B2 (ja) | 2019-10-11 | 2024-06-21 | 記憶装置 |
| JP2025116148A Pending JP2025137576A (ja) | 2019-10-11 | 2025-07-09 | 記憶装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024100616A Active JP7711271B2 (ja) | 2019-10-11 | 2024-06-21 | 記憶装置 |
| JP2025116148A Pending JP2025137576A (ja) | 2019-10-11 | 2025-07-09 | 記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12082391B2 (https=) |
| JP (3) | JP7510431B2 (https=) |
| KR (1) | KR20220079567A (https=) |
| CN (1) | CN114503202A (https=) |
| WO (1) | WO2021069998A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7195068B2 (ja) * | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| US11984165B2 (en) | 2022-05-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with reduced area |
| CN116209253B (zh) * | 2022-09-23 | 2024-02-20 | 北京超弦存储器研究院 | 存储单元、动态存储器、其读取方法及电子设备 |
| US20250086443A1 (en) * | 2023-09-11 | 2025-03-13 | Macronix International Co., Ltd. | Universal memories for in-memory computing |
| WO2025109451A1 (ja) * | 2023-11-24 | 2025-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置及び記憶装置 |
| CN119418747A (zh) * | 2024-11-08 | 2025-02-11 | 华中科技大学 | 一种动态存储器结构及其操作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016115387A (ja) * | 2014-12-11 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置及び電子機器 |
| JP2017168809A (ja) * | 2015-10-22 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 半導体装置、又は該半導体装置を有する記憶装置 |
| JP2019008862A (ja) * | 2017-06-26 | 2019-01-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101891065B1 (ko) | 2010-03-19 | 2018-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 구동 방법 |
| KR101853516B1 (ko) * | 2010-07-27 | 2018-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9978879B2 (en) * | 2016-08-31 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6693907B2 (ja) | 2017-06-08 | 2020-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
-
2020
- 2020-09-25 WO PCT/IB2020/058976 patent/WO2021069998A1/ja not_active Ceased
- 2020-09-25 US US17/762,473 patent/US12082391B2/en active Active
- 2020-09-25 KR KR1020227012982A patent/KR20220079567A/ko active Pending
- 2020-09-25 CN CN202080068983.6A patent/CN114503202A/zh active Pending
- 2020-09-25 JP JP2021550719A patent/JP7510431B2/ja active Active
-
2024
- 2024-06-21 JP JP2024100616A patent/JP7711271B2/ja active Active
-
2025
- 2025-07-09 JP JP2025116148A patent/JP2025137576A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016115387A (ja) * | 2014-12-11 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置及び電子機器 |
| JP2017168809A (ja) * | 2015-10-22 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 半導体装置、又は該半導体装置を有する記憶装置 |
| JP2019008862A (ja) * | 2017-06-26 | 2019-01-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021069998A1 (ja) | 2021-04-15 |
| KR20220079567A (ko) | 2022-06-13 |
| US20220344334A1 (en) | 2022-10-27 |
| JP7510431B2 (ja) | 2024-07-03 |
| JP2025137576A (ja) | 2025-09-19 |
| JP2024117815A (ja) | 2024-08-29 |
| US12082391B2 (en) | 2024-09-03 |
| JP7711271B2 (ja) | 2025-07-22 |
| CN114503202A (zh) | 2022-05-13 |
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