JPWO2021059448A1 - - Google Patents

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Publication number
JPWO2021059448A1
JPWO2021059448A1 JP2021548093A JP2021548093A JPWO2021059448A1 JP WO2021059448 A1 JPWO2021059448 A1 JP WO2021059448A1 JP 2021548093 A JP2021548093 A JP 2021548093A JP 2021548093 A JP2021548093 A JP 2021548093A JP WO2021059448 A1 JPWO2021059448 A1 JP WO2021059448A1
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JP
Japan
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JP2021548093A
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JP7339563B2 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2021548093A 2019-09-26 2019-09-26 光送信器 Active JP7339563B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/037957 WO2021059448A1 (ja) 2019-09-26 2019-09-26 光送信器

Publications (2)

Publication Number Publication Date
JPWO2021059448A1 true JPWO2021059448A1 (ja) 2021-04-01
JP7339563B2 JP7339563B2 (ja) 2023-09-06

Family

ID=75165673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021548093A Active JP7339563B2 (ja) 2019-09-26 2019-09-26 光送信器

Country Status (5)

Country Link
US (1) US20220376474A1 (ja)
EP (1) EP4037114B1 (ja)
JP (1) JP7339563B2 (ja)
CN (1) CN114450861A (ja)
WO (1) WO2021059448A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220320826A1 (en) * 2021-04-02 2022-10-06 Arista Networks, Inc. Variable-width waveguide for semiconductor optical amplifier devices
CN117117635B (zh) * 2023-08-24 2024-07-26 武汉敏芯半导体股份有限公司 一种半导体光放大器及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116124A (ja) * 1994-10-13 1996-05-07 Hitachi Ltd 半導体光素子
JP2012004441A (ja) * 2010-06-18 2012-01-05 Furukawa Electric Co Ltd:The 光増幅装置
JP2012069799A (ja) * 2010-09-24 2012-04-05 Furukawa Electric Co Ltd:The 半導体光導波路素子およびその製造方法
US20170179679A1 (en) * 2015-12-16 2017-06-22 Electronics And Telecommunications Research Institute Semiconductor optical device
JP2018074098A (ja) * 2016-11-04 2018-05-10 日本電信電話株式会社 半導体光集積回路
JP2018107310A (ja) * 2016-12-27 2018-07-05 古河電気工業株式会社 半導体レーザモジュール

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US6574259B1 (en) * 1999-09-02 2003-06-03 Agility Communications, Inc. Method of making an opto-electronic laser with integrated modulator
CN1182666C (zh) * 2002-04-29 2004-12-29 清华大学 减少注入锁模光纤环激光器时钟提取中的码型效应的装置
JP3890291B2 (ja) * 2002-11-28 2007-03-07 日本オプネクスト株式会社 電界吸収型変調器
CN102171896B (zh) * 2008-10-03 2014-07-30 富士通株式会社 光放大控制装置、半导体光放大器控制方法及光传送设备
WO2010073392A1 (ja) * 2008-12-26 2010-07-01 富士通株式会社 光信号発生装置及びその調整方法
CN101710670A (zh) * 2009-05-15 2010-05-19 长春理工大学 带有限制光反馈结构分别驱动的发射波长为808nm锥形半导体激光器
CN102055135B (zh) * 2009-11-04 2013-09-04 中国科学院半导体研究所 锥形光子晶体量子级联激光器及其制作方法
CN102419460B (zh) * 2011-09-16 2014-09-03 清华大学 耦合波导、其制作方法及应用其的半导体光电子器件
JP5823920B2 (ja) * 2012-06-13 2015-11-25 日本電信電話株式会社 半導体光集積素子
CN105900298A (zh) * 2014-01-14 2016-08-24 日本碍子株式会社 外部谐振器型发光装置
CN108141006B (zh) * 2015-09-29 2020-09-15 日本电信电话株式会社 半导体激光器装置
JP6654468B2 (ja) * 2016-02-29 2020-02-26 日本ルメンタム株式会社 光送信モジュール
CN106058638A (zh) * 2016-06-01 2016-10-26 中国科学院半导体研究所 一种用于输出飞秒脉冲的锁模激光器
CN106961071B (zh) * 2017-04-27 2019-12-24 中国科学院长春光学精密机械与物理研究所 一种基于脊形有源区弱波导的半导体光放大器
JP2019004093A (ja) * 2017-06-19 2019-01-10 日本電信電話株式会社 半導体光集積装置
CN107611772B (zh) * 2017-09-25 2020-07-28 清华大学 电吸收调制激光器及其制备方法
CN108879321A (zh) * 2018-09-12 2018-11-23 成都微泰光芯技术有限公司 一种集成soa的eml芯片

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116124A (ja) * 1994-10-13 1996-05-07 Hitachi Ltd 半導体光素子
JP2012004441A (ja) * 2010-06-18 2012-01-05 Furukawa Electric Co Ltd:The 光増幅装置
JP2012069799A (ja) * 2010-09-24 2012-04-05 Furukawa Electric Co Ltd:The 半導体光導波路素子およびその製造方法
US20170179679A1 (en) * 2015-12-16 2017-06-22 Electronics And Telecommunications Research Institute Semiconductor optical device
JP2018074098A (ja) * 2016-11-04 2018-05-10 日本電信電話株式会社 半導体光集積回路
JP2018107310A (ja) * 2016-12-27 2018-07-05 古河電気工業株式会社 半導体レーザモジュール

Also Published As

Publication number Publication date
EP4037114A1 (en) 2022-08-03
EP4037114A4 (en) 2023-06-07
EP4037114B1 (en) 2024-05-01
CN114450861A (zh) 2022-05-06
WO2021059448A1 (ja) 2021-04-01
JP7339563B2 (ja) 2023-09-06
US20220376474A1 (en) 2022-11-24

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