JPWO2021050400A5 - - Google Patents

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Publication number
JPWO2021050400A5
JPWO2021050400A5 JP2022515620A JP2022515620A JPWO2021050400A5 JP WO2021050400 A5 JPWO2021050400 A5 JP WO2021050400A5 JP 2022515620 A JP2022515620 A JP 2022515620A JP 2022515620 A JP2022515620 A JP 2022515620A JP WO2021050400 A5 JPWO2021050400 A5 JP WO2021050400A5
Authority
JP
Japan
Prior art keywords
layer
capacitor
metal
capacitor plate
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022515620A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022547946A (ja
Publication date
Priority claimed from US16/564,849 external-priority patent/US11075157B2/en
Application filed filed Critical
Publication of JP2022547946A publication Critical patent/JP2022547946A/ja
Publication of JPWO2021050400A5 publication Critical patent/JPWO2021050400A5/ja
Pending legal-status Critical Current

Links

JP2022515620A 2019-09-09 2020-09-08 トレンチベースの金属・絶縁体・金属コンデンサを有するｉｃ Pending JP2022547946A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/564,849 US11075157B2 (en) 2019-09-09 2019-09-09 IC having trench-based metal-insulator-metal capacitor
US16/564,849 2019-09-09
PCT/US2020/049632 WO2021050400A1 (en) 2019-09-09 2020-09-08 Ic having trench-based metal-insulator-metal capacitor

Publications (2)

Publication Number Publication Date
JP2022547946A JP2022547946A (ja) 2022-11-16
JPWO2021050400A5 true JPWO2021050400A5 (de) 2023-09-12

Family

ID=74851174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515620A Pending JP2022547946A (ja) 2019-09-09 2020-09-08 トレンチベースの金属・絶縁体・金属コンデンサを有するｉｃ

Country Status (5)

Country Link
US (2) US11075157B2 (de)
EP (1) EP4029054A4 (de)
JP (1) JP2022547946A (de)
CN (1) CN114342063A (de)
WO (1) WO2021050400A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113394341A (zh) * 2020-03-13 2021-09-14 联华电子股份有限公司 金属-绝缘层-金属电容器及其制作方法
CN113497186A (zh) * 2020-04-01 2021-10-12 联华电子股份有限公司 并联的电容结构及其制作方法
US11854770B2 (en) * 2021-01-14 2023-12-26 Applied Materials, Inc. Plasma processing with independent temperature control
WO2024087187A1 (zh) * 2022-10-28 2024-05-02 华为技术有限公司 一种集成装置、制作方法、探测装置及终端

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329234B1 (en) * 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
US6838352B1 (en) * 2002-07-05 2005-01-04 Newport Fab, Llc. Damascene trench capacitor for mixed-signal/RF IC applications
TWI229411B (en) * 2004-04-20 2005-03-11 Powerchip Semiconductor Corp Method of manufacturing a semiconductor device
US7470991B2 (en) * 2005-02-24 2008-12-30 Texas Instruments Incorporated Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
WO2008010028A1 (en) 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
US20080277761A1 (en) * 2007-05-08 2008-11-13 Texas Instruments, Inc. On-chip isolation capacitors, circuits therefrom, and methods for forming the same
US8716100B2 (en) * 2011-08-18 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers
KR101720117B1 (ko) * 2011-12-14 2017-03-27 인텔 코포레이션 복수의 금속 산화물층들을 구비한 절연체 스택을 갖는 금속―절연체―금속（ｍｉｍ）커패시터
US9741817B2 (en) * 2016-01-21 2017-08-22 Tower Semiconductor Ltd. Method for manufacturing a trench metal insulator metal capacitor

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