JPWO2021009619A1 - - Google Patents

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Publication number
JPWO2021009619A1
JPWO2021009619A1 JP2021532546A JP2021532546A JPWO2021009619A1 JP WO2021009619 A1 JPWO2021009619 A1 JP WO2021009619A1 JP 2021532546 A JP2021532546 A JP 2021532546A JP 2021532546 A JP2021532546 A JP 2021532546A JP WO2021009619 A1 JPWO2021009619 A1 JP WO2021009619A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021532546A
Other languages
Japanese (ja)
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JPWO2021009619A5 (https=
JP7564104B2 (ja
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Publication of JPWO2021009619A1 publication Critical patent/JPWO2021009619A1/ja
Publication of JPWO2021009619A5 publication Critical patent/JPWO2021009619A5/ja
Priority to JP2024167304A priority Critical patent/JP2024177200A/ja
Application granted granted Critical
Publication of JP7564104B2 publication Critical patent/JP7564104B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2021532546A 2019-07-17 2020-07-08 半導体装置、および半導体装置の作製方法 Active JP7564104B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024167304A JP2024177200A (ja) 2019-07-17 2024-09-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019132098 2019-07-17
JP2019132098 2019-07-17
PCT/IB2020/056393 WO2021009619A1 (ja) 2019-07-17 2020-07-08 半導体装置、および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024167304A Division JP2024177200A (ja) 2019-07-17 2024-09-26 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021009619A1 true JPWO2021009619A1 (https=) 2021-01-21
JPWO2021009619A5 JPWO2021009619A5 (https=) 2023-06-27
JP7564104B2 JP7564104B2 (ja) 2024-10-08

Family

ID=74210239

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021532546A Active JP7564104B2 (ja) 2019-07-17 2020-07-08 半導体装置、および半導体装置の作製方法
JP2024167304A Withdrawn JP2024177200A (ja) 2019-07-17 2024-09-26 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024167304A Withdrawn JP2024177200A (ja) 2019-07-17 2024-09-26 半導体装置

Country Status (3)

Country Link
US (1) US20220293764A1 (https=)
JP (2) JP7564104B2 (https=)
WO (1) WO2021009619A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240104984A (ko) * 2022-12-28 2024-07-05 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 집적회로 소자
US20250210564A1 (en) * 2023-12-26 2025-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming patterns, package, and manufacturing method of package
WO2026058120A1 (ja) * 2024-09-13 2026-03-19 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017033082A1 (ja) * 2015-08-21 2017-03-02 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する電子機器
JP2017175129A (ja) * 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
JP7490633B2 (ja) * 2019-02-22 2024-05-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7516361B2 (ja) * 2019-05-10 2024-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102648525B (zh) * 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
TWI618252B (zh) * 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
TWI666770B (zh) * 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
JP6488124B2 (ja) * 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
US9768317B2 (en) * 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6674269B2 (ja) * 2015-02-09 2020-04-01 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US10096715B2 (en) * 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
US10115741B2 (en) * 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) * 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR102320483B1 (ko) * 2016-04-08 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10032918B2 (en) * 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2018150295A1 (ja) * 2017-02-15 2018-08-23 株式会社半導体エネルギー研究所 半導体装置
CN110402497B (zh) * 2017-03-29 2024-08-06 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
JPWO2018215878A1 (ja) * 2017-05-26 2020-03-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN111033757B (zh) * 2017-09-01 2024-04-26 株式会社半导体能源研究所 半导体装置及显示装置
JP7229669B2 (ja) * 2017-11-17 2023-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11257960B2 (en) * 2018-03-29 2022-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017033082A1 (ja) * 2015-08-21 2017-03-02 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する電子機器
JP2017175129A (ja) * 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
JP7490633B2 (ja) * 2019-02-22 2024-05-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7516361B2 (ja) * 2019-05-10 2024-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2024177200A (ja) 2024-12-19
US20220293764A1 (en) 2022-09-15
WO2021009619A1 (ja) 2021-01-21
JP7564104B2 (ja) 2024-10-08

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