JP7564104B2 - 半導体装置、および半導体装置の作製方法 - Google Patents

半導体装置、および半導体装置の作製方法 Download PDF

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JP7564104B2
JP7564104B2 JP2021532546A JP2021532546A JP7564104B2 JP 7564104 B2 JP7564104 B2 JP 7564104B2 JP 2021532546 A JP2021532546 A JP 2021532546A JP 2021532546 A JP2021532546 A JP 2021532546A JP 7564104 B2 JP7564104 B2 JP 7564104B2
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oxide
insulator
conductor
film
transistor
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JPWO2021009619A5 (https=
JPWO2021009619A1 (https=
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舜平 山崎
哲弥 掛端
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2021532546A 2019-07-17 2020-07-08 半導体装置、および半導体装置の作製方法 Active JP7564104B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024167304A JP2024177200A (ja) 2019-07-17 2024-09-26 半導体装置

Applications Claiming Priority (3)

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JP2019132098 2019-07-17
JP2019132098 2019-07-17
PCT/IB2020/056393 WO2021009619A1 (ja) 2019-07-17 2020-07-08 半導体装置、および半導体装置の作製方法

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JPWO2021009619A1 JPWO2021009619A1 (https=) 2021-01-21
JPWO2021009619A5 JPWO2021009619A5 (https=) 2023-06-27
JP7564104B2 true JP7564104B2 (ja) 2024-10-08

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JP (2) JP7564104B2 (https=)
WO (1) WO2021009619A1 (https=)

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KR20240104984A (ko) * 2022-12-28 2024-07-05 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 집적회로 소자
US20250210564A1 (en) * 2023-12-26 2025-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming patterns, package, and manufacturing method of package
WO2026058120A1 (ja) * 2024-09-13 2026-03-19 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

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WO2017033082A1 (ja) 2015-08-21 2017-03-02 株式会社半導体エネルギー研究所 半導体装置、及び該半導体装置を有する電子機器
JP2017175129A (ja) 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
JP7490633B2 (ja) 2019-02-22 2024-05-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7516361B2 (ja) 2019-05-10 2024-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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TWI618252B (zh) * 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
TWI666770B (zh) * 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
JP6488124B2 (ja) * 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
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JPWO2018215878A1 (ja) * 2017-05-26 2020-03-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
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JP2017175129A (ja) 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
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JP7516361B2 (ja) 2019-05-10 2024-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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US20220293764A1 (en) 2022-09-15
WO2021009619A1 (ja) 2021-01-21
JPWO2021009619A1 (https=) 2021-01-21

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