JPWO2020235427A1 - - Google Patents
Info
- Publication number
- JPWO2020235427A1 JPWO2020235427A1 JP2021520736A JP2021520736A JPWO2020235427A1 JP WO2020235427 A1 JPWO2020235427 A1 JP WO2020235427A1 JP 2021520736 A JP2021520736 A JP 2021520736A JP 2021520736 A JP2021520736 A JP 2021520736A JP WO2020235427 A1 JPWO2020235427 A1 JP WO2020235427A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
- C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/625—Hydroxyacids
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019095886 | 2019-05-22 | ||
JP2019095886 | 2019-05-22 | ||
PCT/JP2020/019179 WO2020235427A1 (ja) | 2019-05-22 | 2020-05-14 | レジスト下層膜形成組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020235427A1 true JPWO2020235427A1 (ja) | 2020-11-26 |
JP7416062B2 JP7416062B2 (ja) | 2024-01-17 |
Family
ID=73458188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021520736A Active JP7416062B2 (ja) | 2019-05-22 | 2020-05-14 | レジスト下層膜形成組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220229368A1 (ja) |
JP (1) | JP7416062B2 (ja) |
KR (1) | KR20220013356A (ja) |
CN (1) | CN113906077B (ja) |
TW (1) | TWI842901B (ja) |
WO (1) | WO2020235427A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024075720A1 (ja) * | 2022-10-04 | 2024-04-11 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012105648A1 (ja) * | 2011-02-04 | 2012-08-09 | 日産化学工業株式会社 | 非感光性レジスト下層膜形成組成物 |
JP2014174428A (ja) * | 2013-03-12 | 2014-09-22 | Shin Etsu Chem Co Ltd | 珪素含有下層膜材料及びパターン形成方法 |
WO2018052130A1 (ja) * | 2016-09-16 | 2018-03-22 | 日産化学工業株式会社 | 保護膜形成組成物 |
JP2018173520A (ja) * | 2017-03-31 | 2018-11-08 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4105036B2 (ja) | 2003-05-28 | 2008-06-18 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP6274445B2 (ja) * | 2013-01-09 | 2018-02-07 | 日産化学工業株式会社 | レジスト下層膜形成組成物 |
JP6853716B2 (ja) * | 2017-03-31 | 2021-03-31 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
-
2020
- 2020-05-14 US US17/607,254 patent/US20220229368A1/en active Pending
- 2020-05-14 CN CN202080033573.8A patent/CN113906077B/zh active Active
- 2020-05-14 JP JP2021520736A patent/JP7416062B2/ja active Active
- 2020-05-14 KR KR1020217034304A patent/KR20220013356A/ko not_active Application Discontinuation
- 2020-05-14 WO PCT/JP2020/019179 patent/WO2020235427A1/ja active Application Filing
- 2020-05-19 TW TW109116508A patent/TWI842901B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012105648A1 (ja) * | 2011-02-04 | 2012-08-09 | 日産化学工業株式会社 | 非感光性レジスト下層膜形成組成物 |
JP2014174428A (ja) * | 2013-03-12 | 2014-09-22 | Shin Etsu Chem Co Ltd | 珪素含有下層膜材料及びパターン形成方法 |
WO2018052130A1 (ja) * | 2016-09-16 | 2018-03-22 | 日産化学工業株式会社 | 保護膜形成組成物 |
JP2018173520A (ja) * | 2017-03-31 | 2018-11-08 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2020235427A1 (ja) | 2020-11-26 |
TW202109194A (zh) | 2021-03-01 |
CN113906077B (zh) | 2024-08-13 |
CN113906077A (zh) | 2022-01-07 |
KR20220013356A (ko) | 2022-02-04 |
JP7416062B2 (ja) | 2024-01-17 |
TWI842901B (zh) | 2024-05-21 |
US20220229368A1 (en) | 2022-07-21 |
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