JPWO2020203633A1 - - Google Patents

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Publication number
JPWO2020203633A1
JPWO2020203633A1 JP2021511912A JP2021511912A JPWO2020203633A1 JP WO2020203633 A1 JPWO2020203633 A1 JP WO2020203633A1 JP 2021511912 A JP2021511912 A JP 2021511912A JP 2021511912 A JP2021511912 A JP 2021511912A JP WO2020203633 A1 JPWO2020203633 A1 JP WO2020203633A1
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Japan
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JP2021511912A
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JP7192100B2 (ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
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    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

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  • Engineering & Computer Science (AREA)
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  • Ceramic Engineering (AREA)
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  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128286A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 金属セラミック複合体とその接合方法およびこれを用いた放熱基板
JP2007299973A (ja) * 2006-05-01 2007-11-15 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール
WO2011149065A1 (ja) * 2010-05-27 2011-12-01 京セラ株式会社 回路基板およびこれを用いた電子装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5038565B2 (ja) * 2000-09-22 2012-10-03 株式会社東芝 セラミックス回路基板およびその製造方法
JP3797905B2 (ja) 2000-10-27 2006-07-19 株式会社東芝 窒化けい素セラミックス基板およびそれを用いた窒化けい素セラミックス回路基板並びにその製造方法
EP1921675B1 (en) * 2005-08-29 2018-10-31 Hitachi Metals, Ltd. Circuit board and semiconductor module using this, production method for circuit board
US8586493B2 (en) * 2008-07-03 2013-11-19 Hitachi Metals, Ltd. Silicon nitride sintered body, method of producing the same, and silicon nitride circuit substrate and semiconductor module using the same
JP5673106B2 (ja) * 2009-01-13 2015-02-18 日立金属株式会社 窒化珪素基板の製造方法、窒化珪素基板、窒化珪素回路基板および半導体モジュール
DE112015005654T5 (de) * 2014-12-18 2017-08-31 Mitsubishi Electric Corporation Isolierte Leiterplatte, Leistungsmodul und Leistungseinheit
US10872841B2 (en) * 2015-07-09 2020-12-22 Kabushiki Kaisha Toshiba Ceramic metal circuit board and semiconductor device using the same
JP6965084B2 (ja) 2017-10-05 2021-11-10 株式会社前川製作所 乾燥装置及び乾燥方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128286A (ja) * 2004-10-27 2006-05-18 Kyocera Corp 金属セラミック複合体とその接合方法およびこれを用いた放熱基板
JP2007299973A (ja) * 2006-05-01 2007-11-15 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール
WO2011149065A1 (ja) * 2010-05-27 2011-12-01 京セラ株式会社 回路基板およびこれを用いた電子装置

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