JPWO2020195932A1 - - Google Patents

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Publication number
JPWO2020195932A1
JPWO2020195932A1 JP2021509045A JP2021509045A JPWO2020195932A1 JP WO2020195932 A1 JPWO2020195932 A1 JP WO2020195932A1 JP 2021509045 A JP2021509045 A JP 2021509045A JP 2021509045 A JP2021509045 A JP 2021509045A JP WO2020195932 A1 JPWO2020195932 A1 JP WO2020195932A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021509045A
Other languages
Japanese (ja)
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JP7430704B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2020195932A1 publication Critical patent/JPWO2020195932A1/ja
Application granted granted Critical
Publication of JP7430704B2 publication Critical patent/JP7430704B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Ceramic Capacitors (AREA)
JP2021509045A 2019-03-22 2020-03-13 仮固定基板、複合基板および電子部品の剥離方法 Active JP7430704B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019054441 2019-03-22
JP2019054441 2019-03-22
PCT/JP2020/011046 WO2020195932A1 (ja) 2019-03-22 2020-03-13 仮固定基板、複合基板および電子部品の剥離方法

Publications (2)

Publication Number Publication Date
JPWO2020195932A1 true JPWO2020195932A1 (zh) 2020-10-01
JP7430704B2 JP7430704B2 (ja) 2024-02-13

Family

ID=72610531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021509045A Active JP7430704B2 (ja) 2019-03-22 2020-03-13 仮固定基板、複合基板および電子部品の剥離方法

Country Status (4)

Country Link
JP (1) JP7430704B2 (zh)
CN (1) CN113544819B (zh)
TW (1) TWI815002B (zh)
WO (1) WO2020195932A1 (zh)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3769584B2 (ja) * 2004-07-09 2006-04-26 積水化学工業株式会社 基材処理装置及び方法
JP2007251080A (ja) 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
JP2009290206A (ja) * 2008-05-01 2009-12-10 Dainippon Printing Co Ltd 露光装置用瞳フィルタ、回折光学素子及びそれを備えた露光装置
JP5304112B2 (ja) * 2008-09-01 2013-10-02 日本電気硝子株式会社 薄膜付きガラス基板の製造方法
JP2012015150A (ja) * 2010-06-29 2012-01-19 Ushio Inc レーザリフトオフ方法及びレーザリフトオフ装置
JP5869960B2 (ja) 2012-05-28 2016-02-24 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JPWO2013187410A1 (ja) * 2012-06-13 2016-02-04 日本碍子株式会社 複合基板
JP6007688B2 (ja) * 2012-09-11 2016-10-12 富士電機株式会社 半導体装置の製造方法
JP6190671B2 (ja) * 2013-09-05 2017-08-30 古河電気工業株式会社 ダイシング用粘着テープおよび半導体装置の製造方法
JP6196859B2 (ja) * 2013-09-18 2017-09-13 クアーズテック株式会社 ウエハ搭載用部材
JP5781254B1 (ja) * 2013-12-25 2015-09-16 日本碍子株式会社 ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法
JP6216727B2 (ja) * 2014-05-08 2017-10-18 東京応化工業株式会社 支持体分離方法
JP6425606B2 (ja) * 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法
JP6450634B2 (ja) * 2015-04-13 2019-01-09 株式会社ディスコ テープ剥離装置
JP2017041391A (ja) * 2015-08-21 2017-02-23 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
JP6202696B2 (ja) * 2016-08-30 2017-09-27 国立大学法人埼玉大学 単結晶基板製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法

Also Published As

Publication number Publication date
WO2020195932A1 (ja) 2020-10-01
JP7430704B2 (ja) 2024-02-13
CN113544819B (zh) 2024-01-05
TWI815002B (zh) 2023-09-11
TW202103217A (zh) 2021-01-16
CN113544819A (zh) 2021-10-22

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