JPWO2020175626A1 - 電子素子搭載用パッケージ及び電子装置 - Google Patents
電子素子搭載用パッケージ及び電子装置 Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
第1面と、前記第1面上に配線パターンと、を有する配線基板と、
第2面と、前記第2面で開口する貫通孔と、を有する基体と、
前記貫通孔を貫通しているとともに、前記貫通孔の前記開口から露出した第1端を有している信号線と、
前記貫通孔の内面と前記信号線との間を占めているとともに、前記貫通孔の前記開口側に位置する端面を含む端部と前記端部よりも前記貫通孔の前記開口より離れて位置する主要部とを有する絶縁部材と、
前記配線パターンと、前記信号線の前記第1端とを接合する導電性接合材と、
を備え、
前記絶縁部材の前記端部の誘電率が、前記絶縁部材の前記主要部の誘電率より大きい、
電子素子搭載用パッケージである。
上記の電子素子搭載用パッケージと、
前記配線パターンと接合する電子素子と、
を備える、電子装置である。
まず、図1〜図3を参照して一実施形態に係る電子装置1及び電子素子搭載用パッケージ100の構成について説明する。
図1は、本実施形態の電子装置1の全体斜視図である。
図2は、電子装置1に含まれる電子素子搭載用パッケージ100のうち、導電性接合材16による接合位置付近を拡大して示した図である。
図3は、信号線12を通る位置(A−A)での電子素子搭載用パッケージ100の断面を示す図である。
電子素子搭載用パッケージ100は、基体11と、信号線12と、配線基板14と、絶縁部材15と、導電性接合材16などを備える。
なお、本実施形態においては、貫通孔111aは、第2面11aに垂直方向に延びる軸線を有した円柱形状である。すなわち、第2面11aにおける貫通孔111aの開口111bは、円形である。
次に、本実施形態の構成による、同軸線路L1とマイクロストリップ線路L2との特性インピーダンス整合に係る効果について、比較例と対比しつつ説明する。
C=εSE/V …(1)
マイクロストリップ線路L2との境界領域Rでは、式(1)における電界Eが小さくなることで、容量Cが小さくなる。
Z0=(L/C)1/2 …(2)
マイクロストリップ線路L2との境界領域Rでは、上記のように式(1)の容量Cが小さくなることで、式(2)の特性インピーダンスZ0が増大する。この結果、図4の下部のグラフにおいて矢印Aで示されているように、同軸線路L1のうちマイクロストリップ線路L2との境界近傍において、局所的に特性インピーダンスが基準値から増大する。これにより、同軸線路L1とマイクロストリップ線路L2との間で特性インピーダンスの不整合が生じる。
図7A〜図7Dは、電子素子搭載用パッケージ100の製造方法、特に端部151の誘電率を主要部152の誘電率より大きくした絶縁部材15を形成する方法を説明する図である。
図8は、上記実施形態の電子素子搭載用パッケージ100の変形例1を示す断面図である。変形例1の電子素子搭載用パッケージ100では、絶縁部材15の端部151は、当該端部151内で開口111b側の端面15aに近い部分ほど誘電率が大きくなっている。すなわち、端部151は、主要部152に隣接する第1部分1511と、第1部分1511の開口111b側に隣接する第2部分1512とからなる。そして、第1部分1511の誘電率は主要部152の誘電率より大きく、第2部分1512の誘電率は第1部分1511の誘電率より大きくなっている。
図9は、上記実施形態の電子素子搭載用パッケージ100の変形例2を示す断面図である。変形例2の電子素子搭載用パッケージ100は、信号線12の先端(第1端12a)が、絶縁部材15の端面15aからマイクロストリップ線路L2側に突出している点で上記実施形態と異なる。信号線12のうち、端面15aから絶縁部材15の外部に突出している突出部分121は、導電性接合材16により覆われている。これにより、信号線12の突出部分121と、配線パターン141との間の空間、すなわち信号線12の突出部分121及び配線パターン141により容量Cが形成され得る空間が、信号線12及び配線パターン141と同電位に保たれる。このため、信号線12の突出部分121と配線パターン141との間の容量Cを極めて小さくすることができ、当該容量Cに起因する特性インピーダンスの変化を、実質的に無視できる大きさにすることができる。このため、変形例2のように信号線12を突出させた構成によっても、上記実施形態と同様のインピーダンス整合を行うことができる。
上記実施形態では、絶縁部材15の端部151及び主要部152の材質をいずれもガラスとしたが、この構成に限られず、絶縁部材15としては、ガラス以外の絶縁性を有する部材を用いてもよい。ただし、主要部152については、貫通孔111a内で一旦溶融させてから固化させて形成することが可能な部材(典型的には、ガラス)を用いることで、同軸線路L1における信号線12と基部111との間の気密性を確保することができる。端部151については、開口111b側の限られた範囲に配置される部材であるため、必ずしも気密性が確保できる材質のものを用いなくてもよい。よって、端部151としては、例えば、絶縁性を有する樹脂やセラミック材などを用いてもよい。
このように、同軸線路L1の絶縁部材15のうち、配線パターン141を含むマイクロストリップ線路L2との境界近傍にある端部151の誘電率を大きくすることで、当該境界近傍における容量を増大させ、特性インピーダンスを小さくすることができる。よって、前記境界近傍において、電界が小さくなることによる特性インピーダンスの増大と、絶縁部材15の端部151の誘電率を大きくしたことによる特性インピーダンスの減少とを相殺させて、特性インピーダンスの変化を低減することができる。この結果、同軸線路L1とマイクロストリップ線路L2との間での特性インピーダンスの不整合が低減される。これにより、特に高周波数の信号の電力損失を効果的に低減でき、良好な信号の伝送特性を得ることができる。
例えば、第1面14aと第2面11aとの位置関係は、直交していなくてもよく、各面の形状などは電子素子200などに応じて適宜定められてよい。また、信号線12と接合する配線パターン141の配線部分は、第2面11aに直交する向きに伸びていなくてもよい。
2 治具
11 基体
11a 第2面
111 基部
111a 貫通孔
111b 開口
112 突起部
12 信号線
12a 先端(第1端)
121 突出部分
14 配線基板
14a 第1面
14b 接合面
141 配線パターン
142 接地層
15 絶縁部材
15a 端面
151 端部
1511 第1部分
1512 第2部分
152 主要部
16 導電性接合材
100 電子素子搭載用パッケージ
200 電子素子
L1 同軸線路
L2 マイクロストリップ線路
Claims (9)
- 第1面と、前記第1面上に配線パターンと、を有する配線基板と、
第2面と、前記第2面で開口する貫通孔と、を有する基体と、
前記貫通孔を貫通しているとともに、前記貫通孔の前記開口から露出した第1端を有している信号線と、
前記貫通孔の内面と前記信号線との間を占めているとともに、前記貫通孔の前記開口側に位置する端面を含む端部と前記端部よりも前記貫通孔の前記開口より離れて位置する主要部とを有する絶縁部材と、
前記配線パターンと、前記信号線の前記第1端とを接合する導電性接合材と、
を備え、
前記絶縁部材の前記端部の誘電率が、前記絶縁部材の前記主要部の誘電率より大きい、
電子素子搭載用パッケージ。 - 前記絶縁部材の前記端部は、前記主要部に隣接する第1部分と、前記第1部分に隣接するとともに前記端面を含む第2部分とを有しており、
前記第2部分の誘電率は前記第1部分の誘電率より大きい、請求項1に記載の電子素子搭載用パッケージ。 - 前記絶縁部材の前記端部の誘電率は、前記端面に近いほど大きくなっている、請求項2に記載の電子素子搭載用パッケージ。
- 前記信号線の前記第1端は、前記絶縁部材の前記端面から突出していない、請求項1から3のいずれか一項に記載の電子素子搭載用パッケージ。
- 前記信号線は、前記第1端を含むとともに前記絶縁部材の前記端面から突出している突出部分を有しており、
前記突出部分は、前記導電性接合材により覆われている、
請求項1から3のいずれか一項に記載の電子素子搭載用パッケージ。 - 前記絶縁部材はガラスである、請求項1から5のいずれか一項に記載の電子素子搭載用パッケージ。
- 前記絶縁部材の前記端部は樹脂であり、前記絶縁部材の前記主要部はガラスである、請求項1から5のいずれか一項に記載の電子素子搭載用パッケージ。
- 前記信号線に沿う方向における前記絶縁部材の前記端部の長さは、前記信号線により伝送される信号の波長の4分の1より小さい、請求項1から7のいずれか一項に記載の電子素子搭載用パッケージ。
- 請求項1から8のいずれか一項に記載の電子素子搭載用パッケージと、
前記配線パターンと接合する電子素子と、
を備える、電子装置。
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