JPWO2019213048A5

JPWO2019213048A5 -

Info

Publication number: JPWO2019213048A5
Application number: JP2020560906A
Authority: JP
Publication date: 2022-04-27

Description

すべての引用された特許文献、特許出願、および他の参考文献は参照によってそのすべてが本明細書に援用される。しかしながら、本出願内の用語が援用された参照文献内の用語と矛盾または相容れない場合は、本出願からの用語は、援用された参照文献からの相容れない単語に優先される。
［付記１］誘電体層および第１導電層を含む基板と、前記基板の前記第１の面から外側に延在する第１誘電部分を形成する少なくとも１つの非気体誘電材料、平均誘電率を有する前記第１誘電部分、および任意選択のビア内に延在する任意選択の第２誘電部分を含む少なくとも１つの誘電構造体とを含む電磁（ＥＭ）装置であって、前記少なくとも１つの誘電構造体は、逆行性表面を含む前記少なくとも１つの連結スロットによる前記第２誘電部分と前記基板との間の機械的連結、前記誘電構造体と前記基板との間に配置される粗面化表面を有する中間層、または、前記誘電構造体と前記基板との間に配置される接着剤材料のうちの少なくとも１つによって前記基板に対して接着される、前記電磁（ＥＭ）装置。
［付記２］前記基板の第１の面から反対の第２の面に対して前記基板を少なくとも部分的に通って延在する少なくとも１つのビアをさらに含む、付記１に記載の装置。
［付記３］前記機械的連結を含む、付記１～２のうちのいずれか１つ以上に記載の装置。
［付記４］前記中間層が存在し、前記中間層は０．５～５マイクロメートルのピーク部から谷底部までの平均距離によって規定される表面粗さを有する、付記１～３のうちのいずれか１つ以上に記載の装置。
［付記５］前記中間層は、前記第１導電層と同じまたは異なる材料である、付記４に記載の装置。
［付記６］前記接着剤層を含む、付記１～５のうちのいずれか１つ以上に記載の装置。
［付記７］前記ＥＭ装置は誘電共振器アンテナ（ＤＲＡ）を含み、前記少なくとも１つの誘電構造体は少なくとも前記ＤＲＡの少なくとも部分である、付記１～６のうちのいずれか１つ以上に記載の装置。
［付記８］前記装置を形成するように前記基板上に誘電組成物を射出成形することを含む、付記１～７のうちのいずれか１つ以上に記載の装置を製造する方法。
［付記９］前記誘電組成物は、熱可塑性ポリマーを含む、付記８に記載の方法。
［付記１０］前記成形中の前記誘電組成物の射出温度は、前記熱可塑性ポリマーの溶融温度より高い、好ましくは前記射出温度が４０℃～２２０℃、または４０℃～１６０℃、または１００℃～２２０℃である、付記９に記載の方法。
［付記１１］前記射出成形中の射出圧力は、６５～３５０ｋＰａである、付記８～１０のうちのいずれか１つ以上に記載の方法。
［付記１２］前記射出成形後の金型温度は０～２５０℃、または２３～２００℃であり、かつ、任意選択的に０．５～１０分の間維持される、付記８～１１のうちのいずれか１つ以上に記載の方法。
［付記１３］前記射出成形は、前記金型を前記誘電組成物で０．１～１０秒、または０．５～５秒、または０．２～１秒充填することを含む、付記８～１２のうちのいずれか１つ以上に記載の方法。
［付記１４］前記誘電構造体と前記基板との間に視認できる層間剥離が存在しない、付記８～１３のうちのいずれか１つ以上に記載の方法。
［付記１５］前記基板をエッチングすることによって前記機械的連結を形成することをさらに含む、付記８～１４のうちのいずれか１つ以上に記載の方法。
［付記１６］前記基板の導電層上に前記中間層を形成することをさらに含み、前記中間層を形成することは、任意選択的に、前記導電層を酸化剤に対してさらすことを含み、前記酸化剤は、好ましくはＨＮＯ _３、Ｈ _２ＳＯ _４、ＡｇＮＯ _３、Ｈ _２Ｏ _２、ＨＯＣｌ、ＫＯＣｌ、ＫＭｎＯ _４、またはＣＨ _３ＣＯＯＨのうちの少なくとも１つを含む、付記８～１５のうちのいずれか１つ以上に記載の方法。
［付記１７］前記射出成形の前に、前記基板上に接着剤材料の堆積を形成することをさらに含む、付記８～１６のうちのいずれか１つ以上に記載の方法。
［付記１８］前記誘電組成物は、誘電性充填剤を含み、前記誘電性充填剤は、マルチモーダル粒子サイズを有する、付記８～１７のうちのいずれか１つ以上に記載の方法。
［付記１９］前記誘電性充填剤は、第１の平均粒子サイズを有する第１の複数の粒子と、第２の平均粒子サイズを有する第２の複数の粒子とを含み、前記第１の平均粒子サイズは、前記第２の平均粒子サイズの７倍以上、または１０倍以上、または７～２０倍である、付記１８に記載の方法。
［付記２０］前記誘電組成物は、流動調整剤、シラン、または難燃剤のうちの少なくとも１つを含む、付記８～１９のうちのいずれか１つ以上に記載の方法。
［付記２１］前記射出成形中または後に前記誘電組成物または前記基板のうちの少なくとも１つの上に超音波を伝達することをさらに含む、付記８～２０のうちのいずれか１つ以上に記載の方法。 All cited patent documents, patent applications, and other references are hereby incorporated by reference in their entirety. However, if the terms in this application are inconsistent or incompatible with the terms in the referenced references, the terms from this application take precedence over the incompatible words from the referenced references.
[Appendix 1] A substrate including a dielectric layer and a first conductive layer, and at least one non-gas dielectric material forming a first dielectric portion extending outward from the first surface of the substrate, and an average dielectric constant. An electromagnetic (EM) device comprising said first dielectric moiety having and at least one dielectric structure comprising an optional second dielectric moiety extending within an optional via, said at least one dielectric structure. The body is a mechanical connection between the second dielectric portion and the substrate by the at least one coupling slot including a retrograde surface, and a roughened surface disposed between the dielectric structure and the substrate. The electromagnetic (EM) device that is adhered to the substrate by an intermediate layer having, or at least one of an adhesive material arranged between the dielectric structure and the substrate.
[Appendix 2] The apparatus according to Annex 1, further comprising at least one via extending at least partially through the substrate from the first surface of the substrate to the opposite second surface.
[Appendix 3] The device according to any one or more of the appendices 1 and 2, which includes the mechanical connection.
[Appendix 4] The intermediate layer is present, and the intermediate layer has a surface roughness defined by the average distance from the peak portion to the valley bottom portion of 0.5 to 5 micrometers, any of the appendices 1 to 3. Or one or more of the devices described.
[Appendix 5] The apparatus according to Annex 4, wherein the intermediate layer is made of the same material as or different from the first conductive layer.
[Appendix 6] The apparatus according to any one or more of the appendices 1 to 5, which includes the adhesive layer.
[Appendix 7] The EM apparatus includes a dielectric resonator antenna (DRA), and the at least one dielectric structure is at least a part of the DRA, according to any one or more of the appendices 1 to 6. Device.
[Appendix 8] The method for manufacturing the apparatus according to any one or more of the following appendices 1 to 7, which comprises injection molding a dielectric composition onto the substrate so as to form the apparatus.
[Appendix 9] The method according to Appendix 8, wherein the dielectric composition comprises a thermoplastic polymer.
[Appendix 10] The injection temperature of the dielectric composition during molding is higher than the melting temperature of the thermoplastic polymer, preferably the injection temperature is 40 ° C. to 220 ° C., or 40 ° C. to 160 ° C., or 100 ° C. to 100 ° C. The method according to Appendix 9, wherein the temperature is 220 ° C.
[Appendix 11] The method according to any one or more of the appendices 8 to 10, wherein the injection pressure during the injection molding is 65 to 350 kPa.
[Appendix 12] Of the appendices 8 to 11, the mold temperature after the injection molding is 0 to 250 ° C. or 23 to 200 ° C., and is optionally maintained for 0.5 to 10 minutes. The method described in any one or more of the above.
[Appendix 13] The injection molding comprises filling the mold with the dielectric composition for 0.1 to 10 seconds, 0.5 to 5 seconds, or 0.2 to 1 second. The method described in any one or more of them.
[Appendix 14] The method according to any one or more of Annex 8 to 13, wherein there is no visible delamination between the dielectric structure and the substrate.
[Appendix 15] The method according to any one or more of the appendices 8 to 14, further comprising forming the mechanical connection by etching the substrate.
[Appendix 16] Further comprising forming the intermediate layer on the conductive layer of the substrate, forming the intermediate layer optionally comprises exposing the conductive layer to an oxidizing agent. The oxidizing agent preferably comprises at least one of HNO ₃ , H ₂ SO ₄ , AgNO ₃ , H ₂ O ₂ , HOCl, KOCl, KMnO ₄ , or CH ₃ COOH, among appendicees 8-15. The method described in any one or more.
[Appendix 17] The method according to any one or more of the appendices 8 to 16, further comprising forming a deposit of an adhesive material on the substrate prior to the injection molding.
[Supplementary Note 18] The method according to any one or more of Supplementary note 8 to 17, wherein the dielectric composition contains a dielectric filler, and the dielectric filler has a multimodal particle size.
[Appendix 19] The dielectric filler contains a first plurality of particles having a first average particle size and a second plurality of particles having a second average particle size, and the first average. The method according to Appendix 18, wherein the particle size is 7 times or more, 10 times or more, or 7 to 20 times the second average particle size.
[Appendix 20] The method according to any one or more of Annex 8 to 19, wherein the dielectric composition contains at least one of a flow conditioner, silane, or a flame retardant.
[Appendix 21] The description of any one or more of the appendices 8 to 20, further comprising transmitting ultrasonic waves on at least one of the dielectric composition or the substrate during or after the injection molding. Method.

Claims

A substrate containing a dielectric layer and a first conductive layer on the first surface ,
At least one non-gas dielectric material forming a first dielectric moiety extending outward from the first surface of the substrate, and at least one including the first dielectric moiety having a first average permittivity. An electromagnetic (EM) device that includes a dielectric structure.
The at least one dielectric structure is adhered to the substrate by an adhesive material containing a dielectric filler containing ceramic particles, which has a second average dielectric constant .
The electromagnetic (EM) device.

The EM apparatus according to claim 1, wherein the dielectric filler contains titanium dioxide .

The EM apparatus according to any one of claims 1 to 2, wherein the second average dielectric constant matches the first average dielectric constant .

The substrate is
An intermediate layer, wherein the first conductive layer is arranged between the intermediate layer and the dielectric layer, and the intermediate layer is a rough surface having an average roughness larger than the average roughness of the first conductive layer. With the intermediate layer having
The adhesive material disposed between the dielectric structure and the intermediate layer,
The EM apparatus according to any one of claims 1 to 3, further comprising.

The EM apparatus according to claim 4, wherein the intermediate layer is made of the same material as the first conductive layer.

The EM according to claim 4, wherein the intermediate layer comprises an oxide material, copper oxide, black oxide, a nitride material, a layer of an atomic layer deposition material, a layer of a vapor deposition material, or any combination of the above-mentioned materials. Device.

The EM apparatus according to any one of claims 4 to 6 , wherein the intermediate layer has a surface roughness defined by an average distance from a peak portion to a valley bottom portion of 0.5 to 5 micrometers.

13 . The described EM device.

The EM apparatus of claim 8, wherein the adhesive material extends within the at least one via.

9. The mechanical connection is formed by the at least one via in the substrate, further comprising a mechanical connection formed between the adhesive material and the substrate, including a chamfered or retrograde surface. EM device described in.

The EM apparatus according to claim 10, wherein the chamfered or retrograde surface is arranged on the first surface of the substrate .

The EM apparatus according to claim 10, wherein the chamfered or retrograde surface is arranged on the second surface of the substrate .

The EM device according to any one of claims 1 to 12 , wherein the EM device includes a dielectric resonator antenna (DRA), and the at least one dielectric structure is at least a portion of the DRA.

EM according to any one of the above claims, comprising depositing the adhesive material on the substrate and then injection molding the dielectric composition onto the substrate to form an EM apparatus. How to make a device.

14. The method of claim 14 , wherein the dielectric composition comprises a thermoplastic polymer.

The injection temperature of the dielectric composition during molding is higher than the melting temperature of the thermoplastic polymer, preferably the injection temperature is 40 ° C. to 220 ° C., or 40 ° C. to 160 ° C., or 100 ° C. to 220 ° C. , The method according to claim 15 .

The method according to any one or more of claims 14 to 16 , wherein the injection pressure during the injection molding is 65 to 350 kPa.

The mold temperature after the injection molding is 0 to 250 ° C. or 23 to 200 ° C., and is optionally maintained for 0.5 to 10 minutes, according to any one of claims 14 to 17 . The method described.

Of claims 14-18 , the injection molding comprises filling the mold with the dielectric composition for 0.1-10 seconds, 0.5-5 seconds, or 0.2-1 seconds. The method according to any one.

The method according to any one of claims 14 to 19 , wherein there is no visible delamination between the dielectric structure and the substrate.

The method according to any one of claims 14 to 20 , further comprising forming a mechanical connection by etching the substrate.

Further comprising forming an intermediate layer on the conductive layer of the substrate.
Forming the intermediate layer optionally comprises exposing the conductive layer to an oxidizing agent, wherein the oxidizing agent is preferably HNO ₃ , H ₂ SO ₄ , AgNO ₃ , H ₂ O. _2. The method of any one of claims 14-21 , comprising at least one of HOCl, KOCl , KMnO ₄ , or CH ₃ COOH.

The method according to any one of claims 14 to 22 , wherein the dielectric composition comprises a dielectric filler, wherein the dielectric filler has a multimodal particle size.

The dielectric filler comprises a first plurality of particles having a first average particle size and a second plurality of particles having a second average particle size, wherein the first average particle size is: 23. The method of claim 23 , wherein the second average particle size is 7 times or more, 10 times or more, or 7 to 20 times the average particle size.

The method according to any one of claims 14 to 24 , wherein the dielectric composition comprises at least one of a flow conditioner, silane, or a flame retardant.

The method of any one of claims 14-25 , further comprising transmitting ultrasonic waves over at least one of the dielectric composition or the substrate during or after the injection molding.