CN102548200A - Circuit board and manufacturing method thereof - Google Patents
Circuit board and manufacturing method thereof Download PDFInfo
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- CN102548200A CN102548200A CN2011104565267A CN201110456526A CN102548200A CN 102548200 A CN102548200 A CN 102548200A CN 2011104565267 A CN2011104565267 A CN 2011104565267A CN 201110456526 A CN201110456526 A CN 201110456526A CN 102548200 A CN102548200 A CN 102548200A
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Abstract
The invention relates to a circuit board which comprises a glass film with rough layers formed through surface roughening treatment, resin adhesive layers respectively positioned on the rough layers at two sides of the glass film and metal foils positioned at the outer sides of the resin adhesive layers, wherein the glass film, the resin adhesive layers and the metal foils are integrated through pressing. The circuit board provided by the invention adopts the glass film with the rough layers formed through surface roughening treatment as a carrier material, so that the resin adhesive layers and the surface of the glass film have good adhesion; the circuit board also has the characteristic that the difference of dielectric constants at directions X, Y, Z is small. The invention also relates to a manufacturing method of the circuit board.
Description
Technical field
The present invention relates to circuit substrate that a kind of printed circuit uses and preparation method thereof.
Background technology
In recent years; Along with electronic product develops to direction multi-functional, miniaturization; The circuit board that uses develops towards the direction of multiple stratification, wiring densification and signal transmitting high speedization, to circuit substrate---metal-clad laminate, have higher requirement like the combination property of copper-clad plate.
For example; Development along with information communication device high performance, multifunction and networking; For high-speed transfer and handle big capacity information, operation signal trends towards high frequencyization, and the frequency of utilization of electronic product continues high; Require the circuit substrate dielectric loss more and more littler, and require the stability, uniformity of circuit substrate dielectric constant to get well.
Copper-clad plate at present generally uses glass fabric as reinforcing material.Do reinforcing material (like glass fabric) because of using braided material; Textile sheet is because of the reason of braiding and the cross node existence of braided fiber cross section; Make that dielectric (like glass ingredient) is not uniform distribution in the circuit substrate; Make in the circuit board dielectric constant X, Y, Z direction be not isotropism (wherein, X, Y, Z direction are respectively length, width, the thickness direction of circuit board), have the difference in dielectric constant of X, Y, Z direction.When high-frequency signal transmitted in high-frequency circuit board like this, electromagnetic wave was not only in the transmission of X, Y direction, and in the transmission of Z direction, and the decay because of the difference at the dielectric constant of X, Y, Z direction produces signal influences the stability that signal transmits.In order to make the uniform and stable transmission of signal, must reduce the difference of the dielectric distribution of X in the circuit substrate medium, Y, Z direction as far as possible.
In addition; Raising along with the electron product circuit interconnection density; Require the dimensional stability of circuit substrate increasingly high, in order to reduce the thermal stress that circuit substrate produces in the thermal shock process of making, it is accurate in the hole contraposition of installation and assembling process to satisfy components and parts; Require substrate the thermal coefficient of expansion of X, Y, Z direction (Coefficient of Thermal Expansion, CTE) more little good more.Circuit substrate especially for the IC encapsulation; The CTE (3ppm/ ℃) that will approach silicon for the CTE of X, Y direction more is good more; Because the CTE of ifs circuit substrate and the CTE that is encapsulated in the chip on the circuit substrate differ too big, can make chip in environment thermal shock process, produce very big ess-strain and damage.
Present used copper-clad plate (FR-4) generally all with glass fabric as reinforcing material, because of receiving the influence of glass fabric and resin ratio in the sheet material, the CTE of its X, Y direction is 16～18ppm/ ℃.
In order to reduce the CTE of X, Y direction, U.S. Patent application US20040037950A1 uses slim glass-film to come the instead of glass cloth to carry out the making of copper-clad plate.The structure that this patent application has disclosed a kind of multi-layered board is made up of glass-film, resin bed and copper foil layer, but this patent application does not disclose how between glass-film surface and resin bed, to obtain good bonding force.Because of the surface of glass-film is smooth; Resin bed can't form good bonding force with glass-film like this; Make attached to the circuit copper conductor on the resin bed along with resin bed peels off from glass-film together easily; And then the copper-clad plate that can cause this mode to make is not high in the reliability of making and use, can produce scrapping of electronic product.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of circuit substrate, adopting and handling the glass-film that forms rough layer through surface roughening is carrier material, makes resin bonding layer and glass-film surface have good bonding force.
Another object of the present invention is to provide use and above-mentionedly handle the circuit substrate that the glass-film that forms rough layer is made, have dielectric constant in X, Y, characteristics that Z direction difference is little through surface roughening.
A purpose more of the present invention is to provide a kind of manufacture method of circuit substrate, and adopting and handling the glass-film that forms rough layer through surface roughening is carrier material, has good mouldability, and technological operation is easy.
For realizing above-mentioned purpose; The present invention provides a kind of circuit substrate; Comprise through surface roughening and handle the glass-film that forms rough layer, the metal forming that lays respectively at the resin bonding layer on the rough layer of said glass-film both sides and be positioned at the resin bonding layer outside, said glass-film, resin bonding layer and metal forming combine through compacting.
The glass ingredient preferred as alkali oxide content of said glass-film is less than the alumina silicate glass of 0.3% (weight) or the alkali metal oxide content borosilicate glass less than 0.3% (weight).
The thickness of said glass-film can be chosen in 20 μ m between the 1.1mm.In order to obtain the adhesion of good glass-film and resin bonding layer, the inventor forms greater than certain thickness rough rough layer on glass-film through discovering, can improve the adhesion of glass-film and resin bonding layer.Concrete is that the thickness of said rough layer can obtain satisfied bonding force more than or equal to 0.3 μ m.Among this paper, the thickness of rough layer is meant 10 height of nao-and micro relief (Rz) of this rough layer.
Roughening can be carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film, increases contact area, makes glass-film reach better with the resin bonding layer and combines.
The inventor uses frosting method, sol-gel process to be easy to form the rough layer of a layer thickness more than or equal to 0.3 μ m on the surface of glass-film through discovering, the circuit substrate of making has produced good bonding force.
For adhesion that obtains better glass-film and resin bonding layer and the CTE that effectively reduces circuit substrate; The inventor is through a large amount of discovering; The thickness of said rough layer preferably at 5 μ m between the 20 μ m, and the gross thickness of said glass-film both sides rough layer is not more than 1/2 of glass-film gross thickness.
In addition, the inventor finds also that through research glass-film can obtain better dimensional stability through (400 ℃～600 ℃) after the The high temperature anneal.
Resin in the said resin bonding layer is selected from epoxy resin, cyanate ester resin, phenolic resins, polyphenylene oxide resin, polybutadiene, polybutadiene and styrene copolymer resin, polyflon, polyphenyl and oxazines resin, polyimides, contains silicones, in the bimaleimide resin, LCP (Liquid Crystal Polymer) resin, bismaleimide-triazine resin (BT resin) one or more.
Can also add powder filler in the above-mentioned resin bonding layer, powder filler plays purposes such as improving dimensional stability, reduction CTE.The content of said powder filler by volume the percentage meter less than 70% of resin in the resin bonding layer and powder filler total amount.Powder filler is selected from one or more in silicon dioxide, spherical silica, strontium titanates, barium titanate, barium strontium titanate, boron nitride, aluminium nitride, carborundum, aluminium oxide, titanium dioxide, glass dust, glass chopped strand, talcum powder, mica powder, carbon black, CNT, metal powder, polyphenylene sulfide powder and the PTFE powder of powdered quartz, fusion.Wherein, preferred powder filler is the silicon dioxide or the titanium dioxide of fusion.The particle diameter moderate value of powder filler is 0.01～35 μ m, and the particle diameter moderate value of preferred powder filler is 0.1～10 μ m.For reaching more performance, processing can be passed through in the surface of powder filler, handles as using coupling agent.Said resin bonding layer also comprises auxiliary agent, and auxiliary agent includes emulsifying agent and dispersant etc.
The material of said metal forming is the alloy of copper, aluminium, nickel or these metals.
The present invention also provides a kind of manufacture method of foregoing circuit substrate, comprises the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: at the two sides of the glass-film that forms rough layer difference superimposed one or several prepregs;
Step 3: the one side in that prepreg does not contact with glass-film is distinguished a superimposed metal forming;
Step 4: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
In the step 1 of this manufacture method, roughening is carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film, and the thickness of formed rough layer is more than or equal to 0.3 μ m.
In the step 1 of this manufacture method, also be included on the rough layer of glass-film and handle with coupling agent, said coupling agent is selected from silanes or titante coupling agent.
In the step 1 of this manufacture method, before glass-film being carried out the surface roughening processing, also comprise said glass-film is carried out The high temperature anneal under 400 ℃～600 ℃ temperature.
The present invention also provides the another kind of manufacture method of foregoing circuit substrate, comprises the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: the superimposed respectively metal forming of resinizing on the two sides of the glass-film that forms rough layer;
Step 3: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
In the step 1 of this manufacture method, roughening is carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film, and the thickness of formed rough layer is more than or equal to 0.3 μ m.
In the step 1 of this manufacture method, also be included on the rough layer of glass-film and handle with coupling agent, said coupling agent is selected from silanes or titante coupling agent.
In the step 1 of this manufacture method, before glass-film being carried out the surface roughening processing, also comprise said glass-film is carried out The high temperature anneal under 400 ℃～600 ℃ temperature.
Beneficial effect of the present invention: at first, adopting the glass-film of handling through surface roughening is carrier material, makes resin bonding layer and glass-film have good bonding force;
Secondly, uses and above-mentionedly handle the circuit substrate of glass-film making, have dielectric constant in X, Y, characteristics that Z direction difference is little with certain thickness rough layer through surface roughening;
Once more; Control glass-film quantity; The percentage by volume (with respect to the volume summation of glass and resin bonding layer) that makes glass in the circuit substrate is greater than 45%, thereby the copper-clad plate that makes the CTE and the original use glass fabric of X, Y, the Z direction of circuit substrate make reinforcing material is compared and obtained reduction;
In addition, circuit substrate manufacture craft of the present invention is easy, a large amount of production easily.
For further setting forth technological means and the effect that the present invention takes for the predetermined purpose of realization; See also following about detailed description of the present invention and accompanying drawing; Believe the object of the invention, characteristic and characteristics; Should obtain thus going deep into and concrete understanding, yet accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Below in conjunction with accompanying drawing, describe in detail through specific embodiments of the invention, will make technical scheme of the present invention and other beneficial effects obvious.
In the accompanying drawing,
Fig. 1 is the structural representation of circuit substrate of the present invention.
Embodiment
As shown in Figure 1; Circuit substrate of the present invention; Comprise through surface roughening handle to form rough layer 11 glass-film 10, lay respectively at resin bonding layer 20 on the said glass-film 10 both sides rough layers 11 and the metal forming 30 that is positioned at resin bonding layer 20 outside, said glass-film 10, resin bonding layer 20 and metal forming 30 combine through compacting.
The glass ingredient preferred as alkali oxide content of said glass-film 10 is less than the alumina silicate glass of 0.3% (weight) or the alkali metal oxide content borosilicate glass less than 0.3% (weight).
The thickness of said glass-film 10 can be chosen in 20 μ m between the 1.1mm.
In order to obtain the adhesion of good glass-film 10 and resin bonding layer 20, the inventor forms greater than certain thickness rough rough layer 11 on glass-film 10 through discovering, can improve the adhesion of glass-film 10 and resin bonding layer 20.Concrete is that the thickness of said rough layer 11 can obtain satisfied bonding force more than or equal to 0.3 μ m.Among this paper, the thickness of said rough layer 11 is meant 10 height of nao-and micro relief (Rz) of rough layer 11.
Roughening can be carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film 10, increases contact area, makes glass-film 10 reach better with resin bonding layer 20 and combines.
The inventor uses frosting or sol-gel process to be easy to form the rough layer 11 of a layer thickness more than or equal to 0.3 μ m on the surface of glass-film 10 through discovering, the circuit substrate of making has produced good bonding force.
In order to obtain better glass-film 10 and the adhesion of resin bonding layer 20 and the CTE that effectively reduces circuit substrate; The inventor is through a large amount of discovering; The thickness of said rough layer 11 preferably at 5 μ m between the 20 μ m, and the gross thickness of said glass-film 10 both sides rough layers 11 is not more than 1/2 of glass-film 10 gross thickness.
In addition, the inventor finds also that through research before glass-film 10 being carried out the surface roughening processing, said glass-film 10 can obtain better dimensional stability earlier through (400 ℃～600 ℃) after the The high temperature anneal.
Resin in the said resin bonding layer 20 is selected from epoxy resin, cyanate ester resin, phenolic resins, polyphenylene oxide resin, polybutadiene, polybutadiene and styrene copolymer resin, polyflon, polyphenyl and oxazines resin, polyimides, contains silicones, in the bimaleimide resin, LCP (Liquid Crystal Polymer) resin, bismaleimide-triazine resin (BT resin) one or more.
The inventor also finds through research, on the rough layer 11 of glass-film 10, handles with coupling agent, can further improve the adhesion of glass-film 10 and resin bonding layer 20.Used coupling agent can be selected from silanes or titante coupling agent, and these coupling agents preferably have the coupling agent of the functional group that can react with resin.
Can also add powder filler in the said resin bonding layer 20, powder filler plays purposes such as improving dimensional stability, reduction CTE.The content of said powder filler by volume the percentage meter less than 70% of resin in the resin bonding layer 20 and powder filler total amount.Powder filler is selected from one or more in silicon dioxide, spherical silica, strontium titanates, barium titanate, barium strontium titanate, boron nitride, aluminium nitride, carborundum, aluminium oxide, titanium dioxide, glass dust, glass chopped strand, talcum powder, mica powder, carbon black, CNT, metal powder, polyphenylene sulfide powder and the PTFE powder of powdered quartz, fusion.Wherein, preferred powder filler is the silicon dioxide or the titanium dioxide of fusion.The particle diameter moderate value of powder filler is 0.01～35 μ m, and the particle diameter moderate value of preferred powder filler is 0.1～10 μ m.For reaching more performance, processing can be passed through in the surface of powder filler, handles as using coupling agent.Said resin bonding layer 20 also comprises auxiliary agent, and auxiliary agent includes emulsifying agent and dispersant etc.
The material of said metal forming 30 is the alloy of copper, aluminium, nickel or these metals.
The foregoing circuit substrate can be made through several different methods, and a kind of manufacture method of foregoing circuit substrate is to comprise the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: at the two sides of the glass-film that forms rough layer difference superimposed one or several prepregs;
Step 3: the one side in that prepreg does not contact with glass-film is distinguished a superimposed metal forming;
Step 4: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
In the step 1 of this manufacture method; Roughening is carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film; The thickness of formed rough layer is more than or equal to 0.3 μ m; To increase contact area, make glass-film reach better and combine with the resin bonding layer.Preferably, roughening is carried out through frosting or sol-gel process in the surface of said glass-film.
In the step 1 of this manufacture method, also be included on the rough layer of glass-film and handle, can further improve the adhesion of glass-film and resin bonding layer with coupling agent.Used coupling agent can be selected from silanes or titante coupling agent, and these coupling agents preferably have the coupling agent of the functional group that can react with resin.
In this manufacture method; Said prepreg is made by the resin impregnation glass fabric, and said resin is selected from epoxy resin, cyanate ester resin, phenolic resins, polyphenylene oxide resin, polybutadiene, polybutadiene and styrene copolymer resin, polyflon, polyphenyl and oxazines resin, polyimides, contains silicones, in the bimaleimide resin, LCP (Liquid Crystal Polymer) resin, bismaleimide-triazine resin (BT resin) one or more.
The present invention also provides the another kind of manufacture method of foregoing circuit substrate, comprises the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: the superimposed respectively metal forming of resinizing on the two sides of the glass-film that forms rough layer;
Step 3: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
In the step 1 of this manufacture method; Roughening is carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film; The thickness of formed rough layer is more than or equal to 0.3 μ m; To increase contact area, make glass-film reach better and combine with the resin bonding layer.Preferably, roughening is carried out through frosting or sol-gel process in the surface of said glass-film.
In the step 1 of this manufacture method, also be included on the rough layer of glass-film and handle, can further improve the adhesion of glass-film and resin bonding layer with coupling agent.Used coupling agent can be selected from silanes or titante coupling agent, and these coupling agents preferably have the coupling agent of the functional group that can react with resin.
In this manufacture method; This metal forming of resinizing is made through coated with resins on metal forming, and said resin is selected from epoxy resin, cyanate ester resin, phenolic resins, polyphenylene oxide resin, polybutadiene, polybutadiene and styrene copolymer resin, polyflon, polyphenyl and oxazines resin, polyimides, contains silicones, in the bimaleimide resin, LCP (Liquid Crystal Polymer) resin, bismaleimide-triazine resin (BT resin) one or more.
To the above-mentioned circuit substrate of processing, further give to explain in detail and describe like following embodiment.
Embodiment 1:
Get the alumina silicate glass film that a thickness is 30 μ m; After with ethanol the glass-film surface being cleaned; Put into the solution of being formed by 40.2 mass parts hydrofluoric acid, 26.8 mass parts ammonium fluorides, 3.9 mass parts sulfuric acid, 29.1 mass parts deionized waters then, at room temperature soaked 50 minutes, take out the water flushing; Handle with coupling agent after drying, it is the rough layer of 6 μ m that tested glass film upper and lower surface has respectively formed thickness again.
Respectively put one at the glass-film upper and lower surface that forms rough layer and use thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used), carry out superimposed as 0.06mm glass fabric (1080 glass fabric) epoxy resin-impregnated glue system (dicy-curing agent); Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 15Kg/cm
2Carry out hot pressing and get said circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of Copper Foil and prepreg is 1.7N/mm, and the peel strength of prepreg and glass-film is 0.9N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 6.58ppm/ ℃, 6.6ppm/ ℃.
Embodiment 2:
The alumina silicate glass film that to get the thickness through 500 ℃ of annealing in process be 100 μ m; Put into the solution of being formed by 22.1 mass parts hydrofluoric acid, 23 mass parts ammonium fluorides, 37.2 mass parts hydrochloric acid, 17.7 mass parts deionized waters then; At room temperature soaked 120 minutes; The flushing of taking-up water is handled with coupling agent after drying again, and it is the rough layer of 15 μ m that tested glass film upper and lower surface has respectively formed thickness.
Respectively put one at the glass-film upper and lower surface that forms rough layer and use thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used), carry out superimposed as 0.06mm glass fabric (1080 glass fabric) epoxy resin-impregnated glue system; Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 15Kg/cm
2Carry out hot pressing and get said circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of Copper Foil and prepreg is 1.7N/mm, and the peel strength of prepreg and glass-film is 1.1N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 5.8ppm/ ℃, 6.1ppm/ ℃.
Embodiment 3:
In container, put into the solution of being formed by 45.1 mass parts waterglass (sodium metasilicate), 37.2 mass parts hydrochloric acid, 17.7 mass parts deionized waters; Solution is heated to about 40 ℃, and stir about 30 minutes, reactant liquor formed; Again reactant liquor was slowly stirred 24～48 hours, obtain immersion plating liquid.Getting a thickness is 100 μ m borosilicate glass films, fully cleans and puts into immersion plating liquid then 30～40 seconds, can obtain a gel layer.Uniform velocity with 5～25cm/min promotes glass-film again.Following dry 20～30 minutes at 110～150 ℃ then.Under 400～590 ℃, heat-treated 30 minutes at last, naturally cool to room temperature subsequently.The water flushing is handled with coupling agent after drying again, and it is the rough layer of 18 μ m that tested glass film upper and lower surface has respectively formed thickness.
Respectively put one at the glass-film upper and lower surface that forms rough layer and use thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used), carry out superimposed as 0.06mm glass fabric (1080 glass fabric) epoxy resin-impregnated glue system; Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 15Kg/cm
2Carry out hot pressing and get said circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of Copper Foil and prepreg is 1.7N/mm, and the peel strength of prepreg and glass-film is 1.1N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 5.8ppm/ ℃, 6.1ppm/ ℃.
Comparative example 1:
Use five thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used) as glass fabric (2116 glass fabric) the epoxy resin-impregnated glue system (dicy-curing agent) of 0.1mm; Carry out superimposed; Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 25Kg/cm
2Carry out hot pressing and get circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of Copper Foil is 1.75N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 17.6ppm/ ℃, 17.3ppm/ ℃.
Comparative example 2:
The glass-film that to get a thickness be 60 μ m; Respectively put one at the glass-film upper and lower surface and use thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used), carry out superimposed as 0.06mm glass fabric (1080 glass fabric) epoxy resin-impregnated glue system (dicy-curing agent); Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 15Kg/cm
2Carry out hot pressing and get circuit substrate---copper-clad plate, test the circuit substrate that this makes, Copper Foil sticks on the prepreg, directly peels off from glass-film, shows that the peel strength of prepreg and glass-film is 0.1N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 6.3ppm/ ℃, 6.3ppm/ ℃.
Can find out that from above embodiment 1,2,3 circuit base material made from the glass-film that carries out roughened through the surface has not only reduced the X of circuit substrate, the CTE of Y direction, and has good peel strength.Simultaneously among the embodiment 1,2,3, owing to use glass-film, the percentage by volume (with respect to the volume summation of glass and resin bonding layer) that makes glass in the circuit substrate is greater than 45%, like this circuit substrate can obtain simultaneously good peel strength and X, Y to CTE.
Traditional F R-4 copper-clad plate shown in the comparative example 1; Because of using glass fabric as reinforcing material; Do not have to use the glass-film can improve glass ingredient ratio in the copper-clad plate, its X, Y to CTE used through surface roughening in the embodiment 1,2,3 and handled the X of the glass-film that forms rough layer, the CTE of Y direction.
Copper-clad plate shown in the comparative example 2, because of using the glass-film of not handling through surface roughening, the copper-clad plate of making is easy to exfoliated, and practicality is not strong.
Embodiment 4:
Get the glass-film of handling through surface roughening shown in the embodiment 2, respectively putting one at the glass-film upper and lower surface, to have applied thickness be that (Resin Coated Copper Foil RCC), carries out superimposed for the resin coated copper foil of 50 μ m epoxy resin.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 15Kg/cm
2Carry out hot pressing and get said circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of resin bonding layer and glass-film is 1.8N/mm; X before the glass transition temperature, the CTE of Y direction are 6.3ppm/ ℃, and test X, Y direction dielectric constant are 5.32 (10GHZ), and Z direction dielectric constant is 5.37 (10GHZ), and dielectric loss angle tangent is 0.008 (10GHZ).
Comparative example 3:
Use five thickness to process FR-4 prepreg (being the prepreg that the scientific and technological S1141 copper-clad plate product of GUANGDONG SHENGYI is used) as glass fabric (2116 glass fabric) the epoxy resin-impregnated glue system (dicy-curing agent) of 0.1mm; Carry out superimposed; Respectively put a Copper Foil then up and down again, carry out superimposed again.
Put above-mentioned superimposed good lamination into press, under vacuum, curing temperature is 180 ℃, and solidifying pressure is 25Kg/cm2.Carry out hot pressing and get circuit substrate---copper-clad plate, test the circuit substrate that this makes, the peel strength of Copper Foil is 1.75N/mm; X before the glass transition temperature, the CTE of Y direction are respectively 17.6ppm/ ℃, 17.3ppm/ ℃.Test X, Y direction dielectric constant are 4.11 (10GHZ), and Z direction dielectric constant is 4.42 (10GHZ), and dielectric loss angle tangent is 0.025 (10GHZ).
Above embodiment and comparative example all detect copper-clad plate with reference to the IPC4101 standard, and the X of dielectric property, Y direction detection method adopt the IPC-TM650-2.5.5.13 method to test, and test condition is the A attitude, 10GHz; The Z direction detection method of dielectric property adopts the IPC-TM650-2.5.5.6 method to test, and test condition is the A attitude, 10GHz.
Among the above embodiment 4; Adopted resin coated copper foil to cooperate and made circuit substrate,, obtained good peel strength and low X, Y to CTE because wherein the content of glass is greater than 45% percentage by volume with glass-film; The dielectric constant of X, Y, Z direction has only differed 0.04 simultaneously, and difference is very little.And adopt glass fabric to carry out the making of circuit substrate in the comparative example 3, and glass content is little, so the CTE of X, Y, Z direction is big, and the dielectric constant of X, Y, Z direction has differed 0.31 simultaneously, differs bigger.
The circuit substrate that above execution mode is made not only can be used as board substrate, can also be used as the fiber waveguide path and use.
The above; For the person of ordinary skill of the art; Can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection range of accompanying Claim of the present invention.
Claims (13)
1. circuit substrate; It is characterized in that; Comprise through surface roughening and handle the glass-film that forms rough layer, the metal forming that lays respectively at the resin bonding layer on the rough layer of said glass-film both sides and be positioned at the resin bonding layer outside, said glass-film, resin bonding layer and metal forming combine through compacting.
2. circuit substrate as claimed in claim 1 is characterized in that, the glass ingredient of said glass-film is an alkali metal oxide content less than the alumina silicate glass of 0.3% (weight) or the alkali metal oxide content borosilicate glass less than 0.3% (weight).
3. circuit substrate as claimed in claim 1 is characterized in that, the thickness of said glass-film is chosen in 20 μ m between the 1.1mm.
4. circuit substrate as claimed in claim 1 is characterized in that, the thickness of said rough layer is more than or equal to 0.3 μ m.
5. circuit substrate as claimed in claim 1 is characterized in that, the thickness of said rough layer is chosen in 5 μ m between the 20 μ m, and the gross thickness of said glass-film both sides rough layer is not more than 1/2 of glass-film gross thickness.
6. circuit substrate as claimed in claim 1; It is characterized in that the resin in the said resin bonding layer is selected from epoxy resin, cyanate ester resin, phenolic resins, polyphenylene oxide resin, polybutadiene, polybutadiene and styrene copolymer resin, polyflon, polyphenyl and oxazines resin, polyimides, contain in silicones, bimaleimide resin, LCP resin and the bismaleimide-triazine resin one or more.
7. circuit substrate as claimed in claim 1; It is characterized in that; Include powder filler in the said resin bonding layer; The content of said powder filler by volume the percentage meter less than 70% of resin in the resin bonding layer and powder filler total amount; Said powder filler is selected from one or more in silicon dioxide, spherical silica, strontium titanates, barium titanate, barium strontium titanate, boron nitride, aluminium nitride, carborundum, aluminium oxide, titanium dioxide, glass dust, glass chopped strand, talcum powder, mica powder, carbon black, CNT, metal powder, polyphenylene sulfide powder and the PTFE powder of powdered quartz, fusion, and the particle diameter moderate value of said powder filler is 0.01～35 μ m.
8. circuit substrate as claimed in claim 1 is characterized in that, the material of said metal forming is the alloy of copper, aluminium, nickel or these metals.
9. a manufacture method of making circuit substrate as claimed in claim 1 is characterized in that, comprises the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: at the two sides of the glass-film that forms rough layer difference superimposed one or several prepregs;
Step 3: the one side in that prepreg does not contact with glass-film is distinguished a superimposed metal forming;
Step 4: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
10. a manufacture method of making circuit substrate as claimed in claim 1 is characterized in that, comprises the steps:
Step 1: glass-film is provided, glass-film is carried out surface roughening handle the formation rough layer;
Step 2: the superimposed respectively metal forming of resinizing on the two sides of the glass-film that forms rough layer;
Step 3: put superimposed good lamination into press and carry out hot pressing and get said circuit substrate, curing temperature is 100 ℃～400 ℃, and solidifying pressure is 10Kg/cm
2～65Kg/cm
2
11. manufacture method like claim 9 or 10 described circuit substrates; It is characterized in that; In the said step 1; Roughening is carried out through one or more methods in plucking, frosting, chemical etching, sol-gel process and the mechanical grinding in the surface of said glass-film, and the thickness of formed rough layer is more than or equal to 0.3 μ m.
12. the manufacture method like claim 9 or 10 described circuit substrates is characterized in that, in the said step 1, also is included on the rough layer of glass-film and handles with coupling agent, said coupling agent is selected from silanes or titante coupling agent.
13. the manufacture method like claim 9 or 10 described circuit substrates is characterized in that, in the said step 1, before glass-film being carried out the surface roughening processing, also comprises said glass-film is carried out The high temperature anneal under 400 ℃～600 ℃ temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104565267A CN102548200A (en) | 2011-12-29 | 2011-12-29 | Circuit board and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104565267A CN102548200A (en) | 2011-12-29 | 2011-12-29 | Circuit board and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102548200A true CN102548200A (en) | 2012-07-04 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104565267A Pending CN102548200A (en) | 2011-12-29 | 2011-12-29 | Circuit board and manufacturing method thereof |
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| CN (1) | CN102548200A (en) |
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| WO2013097127A1 (en) * | 2011-12-29 | 2013-07-04 | 广东生益科技股份有限公司 | Circuit substrate and manufacturing method thereof |
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| WO2015106479A1 (en) | 2014-01-14 | 2015-07-23 | 广东生益科技股份有限公司 | Circuit substrate and preparation method thereof |
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| US11191158B2 (en) | 2015-08-28 | 2021-11-30 | Shengyi Technology Co., Ltd. | Circuit board and process for preparing the same |
| CN111511543A (en) * | 2018-02-20 | 2020-08-07 | 三井金属矿业株式会社 | Copper foil with glass carrier and method for producing same |
| CN110982202A (en) * | 2019-11-25 | 2020-04-10 | 江苏富仕德科技发展有限公司 | Thermosetting resin composition, prepreg prepared from thermosetting resin composition and copper-clad plate |
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Application publication date: 20120704 |