JPWO2019171622A1 - 電磁波検出器及びそれを備えた電磁波検出器アレイ - Google Patents
電磁波検出器及びそれを備えた電磁波検出器アレイ Download PDFInfo
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Abstract
Description
図1は、本実施の形態である電磁波検出器の構成を示す平面図である。図2は、本実施の形態である電磁波検出器の構成を示す断面図であり、図1の切断線A−Aから見た断面図である。
本実施の形態である電磁波検出器は、実施の形態1とは異なり、グラフェン層30及びグラフェン層40が、積層構造ではなく、平面上、つまり、同一面内に形成されている。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本実施の形態である電磁波検出器は、実施の形態1とは異なり、グラフェン層44がドレイン電極50よりもソース電極52の近くに配置されている。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態4である電磁波検出器は、実施の形態1とは異なり、グラフェン層46が絶縁膜22上に複数有し、基板10の面内方向に離間して配置される。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態5である電磁波検出器は、他の実施の形態とは異なり、グラフェン層48が、入射される電磁波が共鳴するような周期的な構造を有する。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態6である電磁波検出器は、他の実施の形態とは異なり、基板10に電気的に接続され、バックゲート電圧Vbgが印加される電極70を備える。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態7である電磁波検出器は、他の実施の形態とは異なり、ドレイン電極58とソース電極59の金属材料が互いに異なる。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態8である電磁波検出器は、実施の形態1とは異なり、絶縁膜20に基板10が露出した開口部11が設けられ、グラフェン層34と基板10が接触している。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態9である電磁波検出器は、実施の形態2とは異なり、絶縁膜20に基板10が露出した開口部12が設けられ、グラフェン層49と基板10が接触している。同一符号を付した部分については、実施の形態1の電磁波検出器と同様に構成されるため、説明は省略する。
本発明の実施の形態10である電磁波検出器アレイは、電磁波検出器を複数有し、一次元方向又は二次元方向にアレイ状に配置される。図20は、本実施の形態である電磁波検出器アレイの構成を示す平面図である。
本発明の実施の形態11である電磁波検出器アレイは、実施の形態10と異なり、互いに種類の異なる電磁波検出器を複数有し、一次元方向又は二次元方向にアレイ状に配置される。図21は、本実施の形態である電磁波検出器アレイの構成を示す平面図である。
また、以上の目的を達成するために、本発明の電磁波検出器は、基板と、第1の面と第1の面と対向する第2の面を有する第1の絶縁膜と、入射された電磁波により光電変換し、バイアス電圧が印加され電位が変化する第1の二次元原子層材料からなる第1の層と、第1の面上に設けられ、第1の絶縁膜を介して電位の変化が与えられ、電気量の変化を発生する第2の二次元原子層材料からなる第2の層と、基板上に設けられる第2の絶縁膜と、第2の絶縁膜の基板が設けられる面とは反対面に設けられ、第1の絶縁膜の第2の面と接するように設けられる第1の電極とを備え、第1の層は、第2の絶縁膜の基板が設けられる面とは反対面に設けられ、第1の電極と電気的に接続され、第1の電極から第1の絶縁膜を介して第2の層に電位の変化を与える。
Claims (15)
- 第1の面と前記第1の面と対向する第2の面を有する第1の絶縁膜(22,24)と、
入射された電磁波により光電変換し、電位が変化する第1の二次元原子層材料からなる第1の層(40,42)と、
前記第1の面上に設けられ、前記第1の絶縁膜(22,24)を介して前記電位の変化が与えられ、電気量の変化を発生する第2の二次元原子層材料からなる第2の層(30,32)と
を備えることを特徴とする電磁波検出器。 - 基板(10)と、
前記基板(10)上に設けられ、前記基板(10)が設けられる面とは反対面で第2の層(30)と接する第2の絶縁膜(20)とを備え、
第1の層(40)は、第1の絶縁膜(22)の第2の面に接するように設けられることを特徴とする請求項1に記載の電磁波検出器。 - 基板(10)と、
前記基板(10)上に設けられ、前記基板(10)が設けられる面とは反対面で第1の層(34)と接する第2の絶縁膜(20)とを備え、
前記第1の層(34)は、第1の絶縁膜(22)の第2の面に接するように設けられ、一部が前記第2の絶縁膜(20)を貫通して前記基板(10)に接することを特徴とする請求項1に記載の電磁波検出器。 - 基板(10)と、
前記基板(10)上に設けられる第2の絶縁膜(20)と、
前記第2の絶縁膜(20)の前記基板(10)が設けられる面とは反対面に設けられ、第1の絶縁膜(24)の第2の面と接するように設けられる第1の電極(64)とを備え、
第1の層(42)は、前記第2の絶縁膜(20)の前記基板(10)が設けられる面とは反対面に設けられ、前記第1の電極(64)と電気的に接続され、前記第1の電極(64)から前記第1の絶縁膜(24)を介して前記第2の層(32)に電位の変化を与えることを特徴とする請求項1に記載の電磁波検出器。 - 第1の層(49)は、一部が第2の絶縁膜(20)を貫通して基板(10)に接していることを特徴とする請求項4に記載の電磁波検出器。
- 第2の層(30)の一端と電気的に接続される第2の電極(50)と、
第2の層(30)の他端と電気的に接続される第3の電極(52)とを備え、
第1の層(44)は、前記第2の電極(50)と前記第3の電極(52)との間の前記第2の層(30)上方に設けられ、前記第2の電極(50)よりも前記第3の電極(52)の近くに配置されることを特徴とする請求項2に記載の電磁波検出器。 - 第1の層(46)は、第1の絶縁膜(22)上に複数有し、基板(10)の面内方向に離間して配置されることを特徴とする請求項2に記載の電磁波検出器。
- 第1の層(48)は、入射される電磁波が共鳴するような周期的な構造を有することを特徴とする請求項2に記載の電磁波検出器。
- 基板(10)に電気的に接続され、バックゲート電圧が印加される第4の電極(70)を備えることを特徴とする請求項2から請求項8のいずれか一項に記載の電磁波検出器。
- 第2の層(30)の一端と電気的に接続される第2の電極(58)と、
第2の層(30)の他端と電気的に接続され、前記第2の電極(30)と異なる金属材料を有する第3の電極(59)とを備えることを特徴とする請求項1から請求項5のいずれか一項に記載の電磁波検出器。 - 第1の層(40)の一端と電気的に接続される第4の電極(60)と、
第1の層(40)の他端と電気的に接続され、前記第4の電極(60)と異なる金属材料を有する第5の電極(62)とを備えることを特徴とする請求項1から請求項3のいずれか一項に記載の電磁波検出器。 - 第1の層(42)と電気的に接続され、第1の電極(64)と異なる金属材料を有する第4の電極(66)を備えることを特徴とする請求項4又は請求項5に記載の電磁波検出器。
- 第1の二次元原子層材料は、グラフェン、グラフェンナノリボン、遷移金属ダイカルコゲナイド、黒リン、シリセン及びゲルマネンからなるグループから選択される二次元原子層材料を含むことを特徴とする請求項1から請求項12のいずれか一項に記載の電磁波検出器。
- 第2の二次元原子層材料は、グラフェン、グラフェンナノリボン、遷移金属ダイカルコゲナイド、黒リン、シリセン及びゲルマネンからなるグループから選択される二次元原子層材料を含むことを特徴とする請求項1から請求項13のいずれか一項に記載の電磁波検出器。
- 請求項1から請求項14のいずれか一項に記載の電磁波検出器(1〜9)を複数有し、一次元方向又は二次元方向にアレイ状に配置されることを特徴とする電磁波検出器アレイ。
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