JPWO2019009308A1 - 熱電変換素子及び熱電変換デバイス - Google Patents
熱電変換素子及び熱電変換デバイス Download PDFInfo
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- JPWO2019009308A1 JPWO2019009308A1 JP2019527731A JP2019527731A JPWO2019009308A1 JP WO2019009308 A1 JPWO2019009308 A1 JP WO2019009308A1 JP 2019527731 A JP2019527731 A JP 2019527731A JP 2019527731 A JP2019527731 A JP 2019527731A JP WO2019009308 A1 JPWO2019009308 A1 JP WO2019009308A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 119
- 230000005422 Nernst effect Effects 0.000 claims abstract description 34
- 230000002159 abnormal effect Effects 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000010248 power generation Methods 0.000 claims description 6
- 230000005307 ferromagnetism Effects 0.000 claims 1
- 230000005415 magnetization Effects 0.000 abstract description 20
- 230000002547 anomalous effect Effects 0.000 abstract description 11
- 239000003302 ferromagnetic material Substances 0.000 abstract description 3
- 230000005291 magnetic effect Effects 0.000 description 30
- 239000002245 particle Substances 0.000 description 17
- 239000006185 dispersion Substances 0.000 description 10
- 230000005355 Hall effect Effects 0.000 description 8
- 230000005678 Seebeck effect Effects 0.000 description 7
- 235000021028 berry Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003775 Density Functional Theory Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 CoCrSb Inorganic materials 0.000 description 1
- 229910019353 CoMnSb Inorganic materials 0.000 description 1
- 229910019107 CoTiSb Inorganic materials 0.000 description 1
- 229910019379 CoVSb Inorganic materials 0.000 description 1
- 229910016583 MnAl Inorganic materials 0.000 description 1
- 241000053208 Porcellio laevis Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/20—Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
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Abstract
Description
ペルティエ係数αyx=ホール伝導度σyx×ゼーベック係数Sxx+縦伝導度σxx×ネルンスト係数Syx …(1)
式(1)より、ペルティエ係数によってネルンスト係数の大きさが定まり、異常ネルンスト効果を判断する上でペルティエ係数を評価することは有効である。
20、30 熱電変換デバイス
22 基板
23 発電体
31 中空部材
Claims (11)
- フェルミエネルギーの近傍にワイル点を有するバンド構造の物質からなり、
異常ネルンスト効果により起電力を生じる熱電機構を有する、熱電変換素子。 - 前記物質の状態密度は、フェルミエネルギーの近傍で極値をとるエネルギー依存性を示す、請求項1に記載の熱電変換素子。
- 前記起電力を定める熱電係数は、温度をTとすると、−TlogTに比例する温度依存性を示す、請求項1又は2に記載の熱電変換素子。
- 前記物質は強磁性を示す、請求項1〜3のいずれか1項に記載の熱電変換素子。
- 前記物質は立方晶系の結晶構造を有する、請求項1〜4のいずれか1項に記載の熱電変換素子。
- 前記物質はフルホイスラー系の結晶構造を有する、請求項1〜5のいずれか1項に記載の熱電変換素子。
- 前記物質は、フェルミエネルギーから±0.1eVの範囲にワイル点を有する、請求項1〜6のいずれか1項に記載の熱電変換素子。
- 前記バンド構造は、第1原理計算によって得られた前記物質のバンド構造である、請求項1〜7のいずれか1項に記載の熱電変換素子。
- 0.1μm以上の厚さを有する、請求項1〜8のいずれか1項に記載の熱電変換素子。
- 基板と、
前記基板の上に設けられ、複数の熱電変換素子を有する発電体と、を備え、
前記複数の熱電変換素子は、各々が一方向に延在した形状をなし、且つ請求項1〜9のいずれか1項の熱電変換素子と同一の物質からなり、
前記発電体は、前記複数の熱電変換素子が、前記一方向と垂直な方向に並列に配置され、且つ電気的に直列に接続されて蛇行形状をなす、熱電変換デバイス。 - 請求項1〜9のいずれか1項に記載の熱電変換素子と、
中空部材と、を備え、
前記熱電変換素子は、シート状であり、前記中空部材の外表面を覆うように設けられている、熱電変換デバイス。
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US10256391B2 (en) * | 2017-08-25 | 2019-04-09 | International Business Machines Corporation | Thermoelectric device |
US11011692B2 (en) * | 2017-10-11 | 2021-05-18 | Ohio State Innovation Foundation | Thermoelectric device utilizing non-zero berry curvature |
CN113728447A (zh) * | 2019-04-26 | 2021-11-30 | 国立大学法人东京大学 | 热电转换元件以及热电转换装置 |
JP7207560B2 (ja) * | 2019-09-25 | 2023-01-18 | 日本電気株式会社 | 熱流センサおよび熱流計測システム |
JP7342623B2 (ja) * | 2019-10-31 | 2023-09-12 | Tdk株式会社 | 熱電変換素子及びこれを備える熱電変換デバイス |
JP7243573B2 (ja) * | 2019-10-31 | 2023-03-22 | Tdk株式会社 | 熱電変換素子及びその製造方法 |
WO2021187347A1 (ja) * | 2020-03-19 | 2021-09-23 | 国立研究開発法人物質・材料研究機構 | 垂直型熱電変換素子、並びにこれを用いた熱電発電応用機器又は熱流センサー |
EP4141976A1 (en) | 2020-04-23 | 2023-03-01 | The University of Tokyo | Thermoelectric conversion element and thermoelectric conversion device |
JPWO2022264940A1 (ja) * | 2021-06-14 | 2022-12-22 | ||
KR20240038098A (ko) | 2021-08-06 | 2024-03-22 | 고쿠리츠다이가쿠호우진 도쿄다이가쿠 | 열전 변환 소자 |
WO2023054416A1 (ja) * | 2021-09-29 | 2023-04-06 | 日東電工株式会社 | 熱電変換素子及びセンサ |
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US9643385B1 (en) * | 2015-12-02 | 2017-05-09 | The Board Of Trustees Of The University Of Alabama | Layered heusler alloys and methods for the fabrication and use thereof |
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Non-Patent Citations (3)
Title |
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FERREIROS, YAGO ET AL.: "Anomalous Nernst and thermal Hall effects in tilted Weyl semimetals", PHYSICAL REVIEW B, vol. 96, JPN6018036480, 8 September 2017 (2017-09-08), pages 115202 - 1, ISSN: 0004861755 * |
SAKURABA, YUYA: "Potential of thermoelectric power generation using anomalous Nernst effect in magnetic materials", SCRIPTA MATERIALIA, vol. 111, JPN6018016252, 3 June 2015 (2015-06-03), pages 29 - 32, ISSN: 0004861754 * |
WATZMAN, SARAH J. ET AL.: "Dirac dispersion generates unusually large Nernst effect inWeyl semimetals", PHYSICAL REVIEW B, vol. 97, JPN7022004055, 18 April 2018 (2018-04-18), pages 161404 - 1, ISSN: 0004861756 * |
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CN117295385A (zh) | 2023-12-26 |
JP7276856B2 (ja) | 2023-05-18 |
US20200212282A1 (en) | 2020-07-02 |
EP3651218A1 (en) | 2020-05-13 |
CN110785862A (zh) | 2020-02-11 |
CN110785862B (zh) | 2023-10-27 |
WO2019009308A1 (ja) | 2019-01-10 |
US11683985B2 (en) | 2023-06-20 |
EP3651218A4 (en) | 2021-04-07 |
JP2023083615A (ja) | 2023-06-15 |
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