JPWO2016017685A1 - 基板処理装置、基板搬送方法及び半導体装置の製造方法並びに記録媒体 - Google Patents
基板処理装置、基板搬送方法及び半導体装置の製造方法並びに記録媒体 Download PDFInfo
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- JPWO2016017685A1 JPWO2016017685A1 JP2016538394A JP2016538394A JPWO2016017685A1 JP WO2016017685 A1 JPWO2016017685 A1 JP WO2016017685A1 JP 2016538394 A JP2016538394 A JP 2016538394A JP 2016538394 A JP2016538394 A JP 2016538394A JP WO2016017685 A1 JPWO2016017685 A1 JP WO2016017685A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
- G01N2201/13—Standards, constitution
Abstract
Description
Claims (10)
- 基板を保持した基板保持具と、前記基板保持具に保持された前記基板の載置状態を検知する検知部と、前記検知部により取得された前記基板の検知データと予め取得していた基準となるマスターデータとを比較して前記基板の検知データが第一許容値以内かを判定する第一判定部と、前記基板の種別を確認する確認部と、前記基板の検知データと前記マスターデータとを比較して前記検知データが第二許容値以内かを判定する第二判定部と、前記第一判定部の判定した結果、前記第一許容値から外れていると判定された場合に、前記確認部により前記基板が所定種別であれば、前記第二判定部の判定結果に応じて前記基板保持具を制御する搬送制御部と、を具備する基板処理装置。
- 前記基板保持具は、前記基板を保持する保持部が第1所定数設けられ、前記搬送制御部は、前記第一判定部による比較を前記第1所定数だけ繰返し行わせ、前記第二判定部による比較を前記第1所定数のうち第2所定数だけ行わせるように構成される請求項1記載の基板処理装置。
- 前記搬送制御部は、前記第一判定部の判定結果が異常有りであって、前記確認部による確認結果、前記基板が所定種別でなければ、前記保持部に対して前記第二判定部による比較を行わせないように構成される請求項1記載の基板処理装置。
- 前記確認部による確認結果が、前記所定種別の基板は、ダミー基板である場合に、前記第二判定部の比較では、前記第2許容値より前記第1許容値の範囲が狭く設定され、前記所定種別の基板は、モニタ基板である場合に、前記第二判定部の比較では、前記第2許容値より前記第1許容値の範囲が広く設定される請求項1または請求項3記載の基板処理装置。
- 前記搬送制御部は、前記第1許容値の範囲を前記基板の種別によらず同じに設定するよう構成されている請求項1乃至請求項3にいずれか一つに記載の基板処理装置。
- 前記搬送制御部は、前記保持部毎に前記検知部から前記基板有無データ及び前記検知データの有無を確認し、前記基板が無しで前記検知データ有りの前記保持部、及び前記基板が有りで前記検知データが無しの前記保持部を、それぞれ異常スロットに設定する請求項2記載の基板処理装置。
- 前記第二判定部の判定結果が異常有りであれば、前記保持部で発生した異常を解除する処理が終了する迄前記基板保持具が待機する様に構成される請求項2記載の基板処理装置。
- 基板を保持した基板保持具に対して、前記基板の載置状態を示す前記基板の検知データと予め正常な状態の前記基板を検知して取得した基準となるマスターデータとを比較して前記基板の載置状態を判定する第一判定工程と、前記基板の種別を確認する確認工程と、前記検知データと前記マスターデータとを比較する第二判定工程を有し、前記第一判定工程で前記検知データが前記第一許容値から外れていると判定された場合に、前記確認工程により確認した結果、前記基板が所定種別であれば、前記第二判定工程の判定結果に応じて前記基板保持具を搬送する基板搬送方法。
- 基板を保持した基板保持具に対して、前記基板の載置状態を示す前記基板の検知データと予め正常な状態の前記基板を検知して取得した基準となるマスターデータとを比較して前記基板の載置状態を判定する第一判定工程と、前記基板の種別を確認する確認工程と、前記検知データと前記マスターデータとを比較する第二判定工程を有し、前記第一判定工程で前記検知データが前記第一許容値から外れていると判定された場合に、前記確認工程により確認した結果、前記基板が所定種別であれば、前記第二判定工程の判定結果に応じて前記基板保持具を搬送する半導体装置の製造方法。
- コンピュータに、基板を装填される溝が刻設された基板保持具の保持状態を検知する検知データを取得する手順と、取得した各検知データと予め正常な状態の前記基板を検知して取得した基準となるマスターデータとを比較することで前記基板の保持状態を判定する手順と、判定により異常が検知された際に、前記基板の種別を確認する手順と、前記基板が所定種別であれば、前記検知データと前記マスターデータとを比較し、前記所定種別に応じて設定された許容値により前記所定種別の基板の保持状態を判定する手順と、を有する状態検知プログラムが記録されたコンピュータ読取可能な記録媒体。
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PCT/JP2015/071486 WO2016017685A1 (ja) | 2014-07-30 | 2015-07-29 | 基板処理装置、基板搬送方法及び半導体装置の製造方法並びに記録媒体 |
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EP3594996B1 (en) * | 2017-03-09 | 2021-06-30 | Fuji Corporation | Component mounting machine |
JP6794880B2 (ja) * | 2017-03-14 | 2020-12-02 | 東京エレクトロン株式会社 | 縦型熱処理装置及び縦型熱処理装置の運転方法 |
JPWO2019053869A1 (ja) | 2017-09-15 | 2020-10-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
US10978331B2 (en) * | 2018-03-30 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for orientator based wafer defect sensing |
JP2020088057A (ja) * | 2018-11-20 | 2020-06-04 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Citations (4)
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JPH06244268A (ja) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Tohoku Ltd | 移載装置 |
JP4503088B2 (ja) * | 2007-11-05 | 2010-07-14 | 株式会社日立国際電気 | 基板処理装置及び基板処理装置の表示方法 |
JP4555302B2 (ja) * | 2004-10-06 | 2010-09-29 | 株式会社日立国際電気 | 半導体製造装置、半導体装置の製造方法、及び検出方法 |
JP2014127635A (ja) * | 2012-12-27 | 2014-07-07 | Tokyo Electron Ltd | 基板搬送方法、基板搬送装置及び記憶媒体 |
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US20090114150A1 (en) * | 2007-11-05 | 2009-05-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH06244268A (ja) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Tohoku Ltd | 移載装置 |
JP4555302B2 (ja) * | 2004-10-06 | 2010-09-29 | 株式会社日立国際電気 | 半導体製造装置、半導体装置の製造方法、及び検出方法 |
JP4503088B2 (ja) * | 2007-11-05 | 2010-07-14 | 株式会社日立国際電気 | 基板処理装置及び基板処理装置の表示方法 |
JP2014127635A (ja) * | 2012-12-27 | 2014-07-07 | Tokyo Electron Ltd | 基板搬送方法、基板搬送装置及び記憶媒体 |
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WO2016017685A1 (ja) | 2016-02-04 |
US10062592B2 (en) | 2018-08-28 |
JP6290421B2 (ja) | 2018-03-07 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |