JPWO2016017520A1 - 液晶表示素子 - Google Patents
液晶表示素子 Download PDFInfo
- Publication number
- JPWO2016017520A1 JPWO2016017520A1 JP2016512149A JP2016512149A JPWO2016017520A1 JP WO2016017520 A1 JPWO2016017520 A1 JP WO2016017520A1 JP 2016512149 A JP2016512149 A JP 2016512149A JP 2016512149 A JP2016512149 A JP 2016512149A JP WO2016017520 A1 JPWO2016017520 A1 JP WO2016017520A1
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- JP
- Japan
- Prior art keywords
- group
- liquid crystal
- carbon atoms
- mass
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 125000003302 alkenyloxy group Chemical group 0.000 claims description 20
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- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 claims description 12
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
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- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
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Abstract
Description
前記第一基板上に、透明導電性材料からなる共通電極と、マトリクス状に配置される複数個のゲートバスライン及びデータバスラインと、
前記ゲートバスラインとデータバスラインとの交差部に設けられる薄膜トランジスタと、該トランジスタにより駆動され透明導電性材料からなる画素電極とを各画素毎に有し、
前記液晶層と、前記第一基板と第二基板のそれぞれの間にホモジニアス配向を誘起する配向膜層を有し、
前記画素電極と共通電極との間の電極間距離:R(μm)と印加電圧:E(V)とが次のふたつの関係を満たし、
E/R ≧ 3 (V/μm)
E ≦ 15 (V)
前記液晶組成物が、負の誘電率異方性を有し、ネマチック相−等方性液体の転移温度が60℃以上であり、誘電率異方性の絶対値が1.5以上であり、一般式(I)
(液晶表示素子)
本発明の表示素子は、FFSモード等の電極間距離に起因する電位差勾配の大きい表示素子に関するものである。以下、図1〜6を参照にして、電極間距離に起因する電位差勾配の大きい表示素子として代表的なFFSモードの液晶表示素子の例を説明する。
E/R ≧ 3 (V/μm)
E ≦ 15 (V)
画素電極に印可される印加電圧:E(V)は、前記半導体の材質、駆動される液晶材料の誘電率等により決定されるものであるが、一般的には、20V以下であり、消費電力の関係から15V以下が好ましく、12V以下が好ましく、10V以下がさらに好ましく、8V以下が特に好ましい、駆動電圧の最低値は低い方が消費電力の観点からは好ましいが、前述の観点から、最低でも1.2V程度が必要であり、3.3V以上が一般的であり、5V以上がさらに一般的である。
本発明に係るFFSモードの液晶表示素子は、特定の液晶組成物を用いているため、高速応答と表示不良の抑制を両立させることができる。
(液晶層)
本発明における液晶組成物は、第一成分として一般式(I)で表される化合物を1種または2種以上含有する。
一般式(I)で表される化合物の合計含有量は、組成物全体の含有量の内、下限値としては5質量%が好ましく、10質量%がより好ましく、15質量%が更に好ましく、20質量%が特に好ましく、25質量%が最も好ましく、上限値としては65質量%が好ましく、55質量%がより好ましく、50質量%が更に好ましく、47質量%が特に好ましく、45質量%が最も好ましい。
一般式(I−a)〜一般式(I−e)で表される化合物群から選ばれる化合物は、1種〜10種含有することが好ましく、1種〜8種含有することが特に好ましく、1種〜5種含有することが特に好ましく、2種以上の化合物を含有することも好ましい。
で表される構造が好ましい。
一般式(II)で表される化合物で表される化合物の液晶組成物中の含有率として、下限値としては10質量%が好ましく、20質量%がより好ましく、25質量%が更に好ましく、28質量%が特に好ましく、30質量%が最も好ましく、上限値としては85質量%が好ましく、75質量%がより好ましく、70質量%が更に好ましく、67質量%が特に好ましく、65質量%が最も好ましい。
A1及びA2はそれぞれ独立して、1,4−シクロヘキシレン基、1,4−フェニレン基又はテトラヒドロピラン−2,5−ジイル基を表すが、A1又は/及びA2が1,4−フェニレン基を表す場合、該1,4−フェニレン基中の1つ以上の水素原子はフッ素原子に置換されていてもよく、
Z1及びZ2はそれぞれ独立して単結合、−OCH2−、−OCF2−、−CH2O−、又はCF2O−を表し、n1及びn2はそれぞれ独立して、0、1、2又は3を表すが、n1+n2は1〜3であり、A1、A2、Z1及び/又はZ2が複数存在する場合にはそれらは同一であっても異なっていてもよいが、n1が1又は2でありn2が0でありA1の少なくとも1つが1,4−シクロへキシレン基でありすべてのZ1が単結合である化合物を除く。)
一般式(IV)で表される化合物の液晶組成物中の含有率として、下限値としては2質量%が好ましく、3質量%がより好ましく、4質量%が更に好ましく、5質量%が特に好ましく、上限値としては45質量%が好ましく、35質量%がより好ましく、30質量%が更に好ましく、27質量%が特に好ましく、25質量%が最も好ましい。
で表される構造が好ましい。
na2は0又は1を表し、A1a2は1,4−シクロヘキシレン基、1,4−フェニレン基又はテトラヒドロピラン−2,5−ジイル基を表し、一般式(IVa1)及び一般式(IVa2)中の1,4−フェニレン基中の1つ以上の水素原子はフッ素原子に置換されていてもよい。)
で表される化合物群の中から選ばれることが好ましい。
で表される化合物が好ましい。
R9及びR10はそれぞれ独立して、炭素原子数1〜10のアルキル基が好ましく、R9及びR10が異なっていることがより好ましく、二つのアルキル基の炭素原子数の合計が5以上10以下であることが好ましい。この場合、一方のアルキル基の炭素原子が5から10であり、もう一方が1から5であることが好ましい。
この中でも、一般式(Va1)または(Va3)が好ましく、一般式(Va1)が特に好ましい。
一般式(V)で表される化合物を含有する場合、その含有量は、1から10%が好ましく、1から8%がより好ましく、2から5が特に好ましい。
Zは、13000以下が好ましく、12000以下がより好ましく、11000以下が特に好ましい。
Δn :25℃における屈折率異方性
Δε :25℃における誘電率異方性
η :20℃における粘度(mPa・s)
γ1 :25℃における回転粘度(mPa・s)
フリッカ:独autronic−MELCHERS製である液晶ディスプレイ電気光学特性評価装置DMSシリーズを用いて、周波数60Hz、印加電圧6∨と3∨の矩形波電界を25℃において印加した際のフリッカ率(%)
◎フリッカ率1%以下(非常に良好)
○フリッカ率1〜2%(許容できるレベル)
△フリッカ率2%〜5%(許容できないレベル)
×フリッカ率5%以上(かなり劣悪)
VHR:周波数60Hz,印加電圧1Vの条件下で60℃における電圧保持率(%)
焼き付き :
液晶表示素子の焼き付き評価は、表示エリア内に所定の固定パターンを1000時間表示させた後に、全画面均一な表示を行ったときの固定パターンの残像のレベルを目視にて以下の4段階評価で行った。
○残像ごく僅かに有るも許容できるレベル
△残像有り許容できないレベル
×残像有りかなり劣悪
滴下痕 :
液晶表示装置の滴下痕の評価は、全面黒表示した場合における白く浮かび上がる滴下痕を目視にて以下の4段階評価で行った。
○残像ごく僅かに有るも許容できるレベル
△残像有り許容できないレベル
×残像有りかなり劣悪
プロセス適合性 :
プロセス適合性は、ODFプロセスにおいて、定積計量ポンプを用いて1回に50pLずつ液晶を滴下することを100000回行い、次の「0〜100回、101〜200回、201〜300回、・・・・99901〜100000回」の各100回ずつ滴下された液晶量の変化を以下の4段階で評価した。
○変化が僅かに有るも許容できるレベル
△変化が有り許容できないレベル(斑発生により歩留まりが悪化)
×変化が有りかなり劣悪(液晶漏れや真空気泡が発生)
低温での溶解性:
低温での溶解性評価は、液晶組成物を調製後、2mLのサンプル瓶に液晶組成物を1g秤量し、これに温度制御式試験槽の中で、次を1サイクル「−20℃(1時間保持)→昇温(0.1℃/毎分)→0℃(1時間保持)→昇温(0.1℃/毎分)→20℃(1時間保持)→降温(−0.1℃/毎分)→0℃(1時間保持)→降温(−0.1℃/毎分)→−20℃」として温度変化を与え続け、目視にて液晶組成物からの析出物の発生を観察し、以下の4段階評価を行った。
尚、実施例において化合物の記載について以下の略号を用いる。
(側鎖)
−n −CnH2n+1 炭素原子数nの直鎖状アルキル基
−On −OCnH2n+1 炭素原子数nの直鎖状アルコキシ基
−V −C=CH2 ビニル基
−Vn −C=C−CnH2n+1 炭素原子数(n+1)の1−アルケン
(環構造)
TV用として一般的であるセル厚3.0μmのFFSモードの液晶表示素子を作製した。この表示素子の電極間距離:Rは画素電極と共通電極間の絶縁膜の膜厚のみである0.5μm、印加電圧:Eは15Vであり、E/Rの値は30V/μmである。液晶組成物の注入は、滴下法にて行い、フリッカ、焼き付き、滴下痕、プロセス適合性及び低温での溶解性の評価を行った。
次に示す組成を有する液晶組成物(液晶組成物1)を調製し、その物性値を測定した。この結果を次の表に示す。
併せて、本発明において規定される液晶組成物とは異なる構成を有する比較例1の液晶組成物を調整し、同様に液晶表示素子を作製し評価を行った。
次に示す組成を有する液晶組成物(液晶組成物2)及び比較例1の液晶組成物を調製し、同様にFFSモードの液晶表示素子を調整しその物性値を測定した。この結果を次の表に示す。
次に示す組成を有する実施例3から8の液晶組成物を調製し、同様にFFSモードの表示素子を作製しその物性値を測定した。この結果を次の表に示す。
次に示す組成を有する実施例9から16の液晶組成物を調製し、同様にFFSモードの表示素子を作製しその物性値を測定した。この結果を次の表に示す。
次に示す組成を有する実施例17及び18の液晶組成物を調製し、同様にFFSモードの表示素子を作製しその物性値を測定した。この結果を次の表に示す。
2 第一の基板
3 電極層
4 配向膜
5 液晶層
6 カラーフィルタ
7 第二の基板
11 ゲート電極
12 ゲート絶縁膜
13 半導体層
14 絶縁層
15 オーミック接触層
16 ドレイン電極
17 ソース電極
18 絶縁保護層
21 画素電極
22 共通電極
23 ストレイジキャパシタ
25 データバスライン
27 ソースバスライン
29 共通ライン
Claims (7)
- 対向に配置された第一の透明絶縁基板と、第二の透明絶縁基板と、前記第一の基板と第二の基板との間に液晶組成物を含有する液晶層を挟持し、
前記第一基板上に、透明導電性材料からなる共通電極と、マトリクス状に配置される複数個のゲートバスライン及びデータバスラインと、
前記ゲートバスラインとデータバスラインとの交差部に設けられる薄膜トランジスタと、該トランジスタにより駆動され透明導電性材料からなる画素電極とを各画素毎に有し、
前記液晶層と、前記第一基板と第二基板のそれぞれの間にホモジニアス配向を誘起する配向膜層を有し、前記画素電極と共通電極との間の電極間距離:R(μm)と印加電圧:E(V)とが次のふたつの関係を満たし、
E/R ≧ 3 (V/μm)
E ≦ 15 (V)
前記液晶組成物が、負の誘電率異方性を有し、ネマチック相−等方性液体の転移温度が60℃以上であり、誘電率異方性の絶対値が1.5以上であり、一般式(I)
- 次の2つの関係を満たす請求項1記載の液晶表示素子。
E/R ≧ 10 (V/μm)
E ≦ 10 (V) - 前記画素電極と共通電極との間の、基板方向に水平の電極間距離:Rhが0である請求項1記載の液晶表示素子。
- 下記一般式(IV)
A1及びA1はそれぞれ独立して、1,4−シクロヘキシレン基、1,4−フェニレン基又はテトラヒドロピラン−2,5−ジイル基を表すが、A1又は/及びA1が1,4−フェニレン基を表す場合、該1,4−フェニレン基中の1つ以上の水素原子はフッ素原子に置換されていてもよく、
Z1及びZ2はそれぞれ独立して単結合、−OCH2−、−OCF2−、−CH2O−、又はCF2O−を表し、
n1及びn2はそれぞれ独立して、0、1、2又は3を表すが、n1+n2は1〜3であり、A1、A2、Z1及び/又はZ2が複数存在する場合にはそれらは同一であっても異なっていてもよいが、n1が1又は2でありn2が0でありA1の少なくとも1つが1,4−シクロへキシレン基でありすべてのZ1が単結合である化合物を除く。)で表される化合物を1種以上含有する請求項1記載の液晶表示素子。 - 一般式(IV)で表される化合物として次の一般式(IVa1)及び一般式(IVa2)
na2は0又は1を表し、A1a2は1,4−シクロヘキシレン基、1,4−フェニレン基又はテトラヒドロピラン−2,5−ジイル基を表し、一般式(IVa1)及び一般式(IVa2)中の1,4−フェニレン基中の1つ以上の水素原子はフッ素原子に置換されていてもよい。)
で表される化合物群の中から選ばれる少なくとも1種類の化合物を含有する請求項3に記載の液晶組成物。 - 前記画素電極が櫛形であるか又は、スリットを有する請求項1記載の液晶表示素子。
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